会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Mandatory access control scheme with active objects
    • 具有活动对象的强制访问控制方案
    • US07600117B2
    • 2009-10-06
    • US10953745
    • 2004-09-29
    • Jinhong Katherine GuoStephen L. JohnsonIl-Pyung Park
    • Jinhong Katherine GuoStephen L. JohnsonIl-Pyung Park
    • H04L29/06G06F17/30
    • G06F21/6218G06F21/629Y10S707/99939
    • Access control is mediated by a set of 2-tuple labels or attributes which are associated with subject and object entities, respectively. Subject entitles, such as processes, have separate read and write attributes, while object entities, such as files, have separate integrity and write control attributes. The system implements a set of rules to provide both integrity control and confidentiality protection. Specifically, write operations to an object are inhibited where the subject's write attribute is lower than the write control attribute of the object. Read operations from an object are inhibited where the subject's read attribute is lower than the object's integrity attribute. When a subject reads from an object having a lower integrity level than the subject's read attribute, the subject's read attribute is demoted.
    • 访问控制由一组与主体和对象实体相关联的2元组标签或属性来介导。 主体实体(如进程)具有单独的读取和写入属性,而对象实体(如文件)具有单独的完整性和写入控制属性。 该系统实施一套规则,以提供完整性控制和机密性保护。 具体来说,当对象的写入属性低于对象的写入控制属性时,禁止对对象的写入操作。 禁止在对象的读取属性低于对象的完整性属性的情况下读取对象的操作。 当主体从具有比主体的读取属性更低的完整性级别的对象读取时,主题的读取属性被降级。
    • 9. 发明授权
    • Method of manufacturing a heterojunction bipolar transistor
    • 异质结双极晶体管的制造方法
    • US06221783B1
    • 2001-04-24
    • US09378764
    • 1999-08-23
    • Sung Ho ParkTae Woo LeeMoon Pyung ParkChul Soon Park
    • Sung Ho ParkTae Woo LeeMoon Pyung ParkChul Soon Park
    • H01L2100
    • H01L29/66318H01L29/7371
    • There is disclosed a method of manufacturing a heterojunction bipolar transistor. The method of manufacturing a heterojunction bipolar transistor can provide a high speed and high frequency characteristic of a transistor, which includes forming sequentially a buffer layer, a subcollector layer, a collector layer, a base layer, an emitter layer and a emitter cap layer on a semiconductor substrate; forming an emitter electrode a selected region of the emitter cap layer; performing etching process for forming a pattern by exposing the selected region of the base layer, and forming a polyimide layer on both side walls of the patternized emitter cap layer and the emitter layer; forming a base electrode at a selected region on the exposed base layer; performing etching process for forming a pattern by exposing some portions of the collector layer, and then forming a p-SiN film on both side walls of the patterned base layer and some portions of the collector layer; exposing some portions of the collector layer, etching the remaining collector layer and some portions of the subcollector layer with a inward slope, and then forming a collector electrode at a selected region of the remaining subcollector layer; and performing a thermal treatment process to make some of the patterned collector layer and the subcollector layer into an insulating region.
    • 公开了一种制造异质结双极晶体管的方法。 异质结双极晶体管的制造方法可以提供晶体管的高速和高频特性,其包括顺序地形成缓冲层,子集电极层,集电极层,基极层,发射极层和发射极盖层 半导体衬底; 在所述发射极帽层的选定区域上形成发射电极; 进行用于通过暴露所述基底层的选定区域形成图案的蚀刻工艺,以及在所述图案化的发射极盖层和所述发射极层的两个侧壁上形成聚酰亚胺层; 在所述暴露的基底层上的选定区域形成基极; 通过暴露集电极层的一些部分进行形成图案的蚀刻处理,然后在图案化基底层的两个侧壁和集电体层的一些部分上形成p-SiN膜; 暴露集电极层的一些部分,以向内的斜率蚀刻剩余的集电极层和子集电极层的一些部分,然后在剩余子集电极层的选定区域形成集电极; 并且进行热处理工艺以使一些图案化的集电极层和子集电极层成为绝缘区域。