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1. 发明申请

US20070274123A1 Controllable nanomechanical memory element 有权
标题翻译：可控纳米机械记忆元件
公开(公告)号：US20070274123A1
公开(公告)日：2007-11-29
申请号：US11597150
申请日：2005-05-24
申请人： Priatiraj Mohanty , Robert Badzey , Alexei Gaidarzhy , Guiti Zolfagharkhani
发明人： Priatiraj Mohanty , Robert Badzey , Alexei Gaidarzhy , Guiti Zolfagharkhani
IPC分类号： G11C23/00
CPC分类号： G11C23/00 , G11C11/56 , Y10S977/932 , Y10S977/943
摘要： A memory device includes a mechanical element that exhibits distinct bistable states under amplitude modulation. The states are dynamically bistable or multi-stable with the application of a drive signal of a given frequency. The natural resonance of the element in conjunction with a hysteretic effect produces distinct states over a specific frequency range. Devices with multiple elements that respond to different frequency ranges provided on a common contact are formed with improved density. The devices may be excited and read with magnetomotive, capacitive, piezoelectric and/or optical methods. The devices may be planar oriented or out of plane oriented to permit three dimensional memory structures. DC biases may be used to shift frequency responses to permit an alternate method for differentiating states of the element.
摘要翻译：存储器件包括在幅度调制下呈现明显的双稳态的机械元件。通过施加给定频率的驱动信号，这些状态是动态双稳态或多稳定的。元件与滞后效应的天然共振在特定频率范围内产生不同的状态。具有响应于在公共接触点上提供的不同频率范围的多个元件的装置以改进的密度形成。这些器件可以用磁动，电容，压电和/或光学方法激发和读取。这些装置可以是平面取向的或面外的以允许三维记忆结构。 DC偏置可以用于移动频率响应，以允许用于区分元件的状态的替代方法。

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