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1. 发明申请

US20130168671A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20130168671A1
公开(公告)日：2013-07-04
申请号：US13807901
申请日：2011-06-30
申请人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
发明人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
IPC分类号： H01L29/417
CPC分类号： H01L29/417 , H01L29/45 , H01L29/78618 , H01L29/7869 , H01L33/26 , H01L33/40
摘要： An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.
摘要翻译：电极和半导体层之间的欧姆接触更稳定地形成，并且它们之间的电接触电阻进一步降低。半导体器件包括由包含铟的氧化物半导体材料构成的半导体层103，设置在半导体层103上并与半导体层103具有欧姆接触的欧姆电极107以及设置在半导体层103和欧姆电极107，其中中间层106包括其铟原子浓度大于半导体层103的内部的第一区域106a和铟原子浓度小于第一区域的第二区域106b。

2. 发明授权

US08895978B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08895978B2
公开(公告)日：2014-11-25
申请号：US13807901
申请日：2011-06-30
申请人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
发明人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
IPC分类号： H01L29/10 , H01L29/45 , H01L29/786 , H01L29/417 , H01L33/40 , H01L33/26
CPC分类号： H01L29/417 , H01L29/45 , H01L29/78618 , H01L29/7869 , H01L33/26 , H01L33/40
摘要： An ohmic contact between an electrode and a semiconductor layer is more stably formed and an electrical contact resistance between them is further reduced.A semiconductor device comprises a semiconductor layer 103 composed of an oxide semiconductor material containing indium, an ohmic electrode 107 provided on the semiconductor layer 103 and having an ohmic contact with the semiconductor layer 103, and an intermediate layer 106 provided between the semiconductor layer 103 and the ohmic electrode 107, wherein the intermediate layer 106 includes a first region 106a whose indium atomic concentration is greater than that of an interior of the semiconductor layer 103 and a second region 106b whose indium atomic concentration is less than that of the first region.
摘要翻译：电极和半导体层之间的欧姆接触更稳定地形成，并且它们之间的电接触电阻进一步降低。半导体器件包括由包含铟的氧化物半导体材料构成的半导体层103，设置在半导体层103上并与半导体层103具有欧姆接触的欧姆电极107以及设置在半导体层103和欧姆电极107，其中中间层106包括其铟原子浓度大于半导体层103的内部的第一区域106a和铟原子浓度小于第一区域的第二区域106b。

3. 发明授权

US08866140B2 Thin-film transistor 有权
标题翻译：薄膜晶体管
公开(公告)号：US08866140B2
公开(公告)日：2014-10-21
申请号：US13732719
申请日：2013-01-02
申请人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
发明人： Junichi Koike , Pilsang Yun , Hideaki Kawakami
IPC分类号： H01L29/12 , H01L29/45 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/78693
摘要： Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
摘要翻译：可以提高半导体层和电极之间的粘附性，通过增强这些元件之间的欧姆接触来实现薄膜晶体管的高速操作，可靠地防止电极表面的氧化，并且实现几乎没有加工的电极制造工艺脚步。本发明的薄膜晶体管10包括由氧化物半导体构成的半导体层4，主要由铜构成的层的源电极5和漏电极6以及设置在半导体层4和各半导体层4之间的氧化物反应层22。源电极5和漏电极6以及设置在氧化物反应层22和半导体层4之间的高电导层21。

4. 发明申请

US20130112972A1 THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管
公开(公告)号：US20130112972A1
公开(公告)日：2013-05-09
申请号：US13732719
申请日：2013-01-02
申请人： Junichi KOIKE , Pilsang YUN , Hideaki KAWAKAMI
发明人： Junichi KOIKE , Pilsang YUN , Hideaki KAWAKAMI
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L29/45 , H01L29/78693
摘要： Making it possible to improve adhesion between the semiconductor layer and the electrodes, realize high-speed operation of the thin-film transistor by enhancing ohmic contact between these members, reliably prevent oxidation of the electrode surfaces, and realize an electrode fabrication process with few processing steps. The thin-film transistor 10 of the present invention includes a semiconductor layer 4 composed of oxide semiconductor, a source electrode 5 and a drain electrode 6 that are layers composed mainly of copper, and oxide reaction layers 22 provided between the semiconductor layer 4 and each of the source electrode 5 and drain electrode 6, and high-conductance layers 21 provided between the oxide reaction layers 22 and semiconductor layer 4.
摘要翻译：可以提高半导体层和电极之间的粘附性，通过增强这些元件之间的欧姆接触来实现薄膜晶体管的高速操作，可靠地防止电极表面的氧化，并且实现几乎没有加工的电极制造工艺脚步。本发明的薄膜晶体管10包括由氧化物半导体构成的半导体层4，主要由铜组成的层的源电极5和漏电极6以及设置在半导体层4和各半导体层4之间的氧化物反应层22。源电极5和漏电极6以及设置在氧化物反应层22和半导体层4之间的高电导层21。

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