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1. 发明授权

US06274402B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06274402B1
公开(公告)日：2001-08-14
申请号：US09475185
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of inorganic material on the first metal layer, by etching and patterning the first insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of organic material on the first insulator layer, by etching and patterning the second insulator layer in such a way that the insulator layer has opened windows at the one of the p-doped regions and the n-doped regions, by curing the second insulator layer by heating at a predetermined temperature for a predetermined time, and depositing a second metal layer on the second insulator layer of organic material in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过在钝化层上沉积和图案化第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过将无机材料的第一绝缘体层沉积在第一金属层，通过蚀刻和图案化第一绝缘体层，使得绝缘层已经在p掺杂区域和n掺杂区域中的至少一个处打开窗口，通过沉积有机的第二绝缘体层通过蚀刻和图案化第二绝缘体层，使得绝缘体层已经在p掺杂区域和n掺杂区域中的一个处打开窗口，通过固化第二绝缘体层b 在预定温度下加热预定时间，并且将第二金属层沉积在有机材料的第二绝缘体层上，使得第二金属层与p掺杂区域和n-掺杂区域中的一个接触，掺杂区域。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

2. 发明授权

US5907766A Method of making a solar cell having improved anti-reflection passivation layer 失效
标题翻译：制造具有改进的抗反射钝化层的太阳能电池的方法
公开(公告)号：US5907766A
公开(公告)日：1999-05-25
申请号：US732765
申请日：1996-10-21
申请人： Richard M. Swanson , Pierre J. Verlinden , Ronald A. Sinton
发明人： Richard M. Swanson , Pierre J. Verlinden , Ronald A. Sinton
IPC分类号： H01L31/0216
CPC分类号： H01L31/02168 , Y02E10/50
摘要： A silicon solar cell has increased efficiency by providing an anti-reflection and passivation layer comprising a layer of silicon dioxide thermally grown on a surface of a silicon body and a layer of titanium dioxide deposited on the layer of silicon oxide. In fabricating the composite anti-reflection passivation layer, a layer of aluminum is first deposited on a surface of the thermally grown silicon oxide. After annealing the aluminum layer, the aluminum is removed from the silicon dioxide layer, and the layer of titanium dioxide is then deposited on the surface of the silicon dioxide from which the aluminum was removed. A layer of magnesium fluoride can be deposited on the surface of the titanium dioxide.
摘要翻译：硅太阳能电池通过提供包括在硅体表面上热生长的二氧化硅层和沉积在氧化硅层上的二氧化钛层的抗反射和钝化层来提高效率。在制造复合抗反射钝化层时，首先将铝层沉积在热生长氧化硅的表面上。在铝层退火之后，从二氧化硅层中除去铝，然后将二氧化钛层沉积在去除了铝的二氧化硅的表面上。可以在二氧化钛的表面上沉积一层氟化镁。

3. 发明授权

US06387726B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06387726B1
公开(公告)日：2002-05-14
申请号：US09474760
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of polyimide on the first metal layer, by etching and patterning the insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the insulator layer of polyimide by heating at temperature for a period, by additionally curing the insulator layer of polyimide by heating at a second temperature, which is higher than the first temperature, and by depositing a second metal layer made of metal stack on the insulator layer of polyimide in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过以这样的方式沉积和图案化钝化层上的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过在第一金属层上沉积聚酰亚胺的绝缘体层金属层，通过以这样的方式蚀刻和图案化聚酰亚胺的绝缘体层，使得绝缘体层在至少一个p掺杂区域和n掺杂区域处打开窗口，通过加热固化聚酰亚胺的绝缘体层在一段时间的温度下，通过在高于第一温度的第二温度下加热来另外固化聚酰亚胺的绝缘体层，并且通过在绝缘体层的绝缘体层上沉积由金属叠层制成的第二金属层聚酰亚胺，使得第二金属层与p掺杂区域和n掺杂区域中的一个接触。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

4. 发明授权

US06333457B1 Edge passivated silicon solar/photo cell and method of manufacture 有权
标题翻译：边缘钝化硅太阳能/光电池及其制造方法
公开(公告)号：US06333457B1
公开(公告)日：2001-12-25
申请号：US09650222
申请日：2000-08-29
申请人： William P. Mulligan , Pierre J. Verlinden
发明人： William P. Mulligan , Pierre J. Verlinden
IPC分类号： H01L31068
CPC分类号： H01L31/1868 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Edge passivation for a small area silicon cell is provided in a batch process by providing streets between individual cells formed in a silicon substrate and diffusing dopant through the substrate along the streets. Following completion of fabrication of the plurality of cells in the substrate, the substrate is sawed along the streets with the diffused region providing passivation along the edges of the individual die.
摘要翻译：通过在形成于硅衬底中的各个单元之间的街道和通过沿着街道的衬底扩散掺杂剂之间的街道，以分批方法提供小面积硅电池的边缘钝化。在完成基板中的多个单元的制造之后，沿着街道锯切基板，其中扩散区域沿着单个管芯的边缘提供钝化。

5. 发明授权

US06423568B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06423568B1
公开(公告)日：2002-07-23
申请号：US09475187
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L2100
CPC分类号： H01L31/0682 , H01L31/022441 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, by depositing and patterning a first metal layer comprising aluminum on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing an insulator layer of inorganic material on the first metal layer, by etching and patterning the insulator layer in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, and by depositing a second three-layer metal stack comprising materials other than aluminum, on the insulator layer of polyimide in such a way that the second three-layer metal stack comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，通过在钝化层上沉积和图案化包含铝的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过沉积无机材料的绝缘体层在第一金属层上，通过以绝缘体层在p掺杂区域和n掺杂区域中的至少一个上打开窗户的方式蚀刻和图案化绝缘体层，并且通过沉积第二三层金属叠层，其包括除了铝之外的材料，以使得第二三层金属堆叠与p掺杂区域和n掺杂区域中的一个接触的方式在聚酰亚胺的绝缘体层上。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

6. 发明授权

US06337283B1 Method of fabricating a silicon solar cell 有权
标题翻译：制造硅太阳能电池的方法
公开(公告)号：US06337283B1
公开(公告)日：2002-01-08
申请号：US09475256
申请日：1999-12-30
申请人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
发明人： Pierre J. Verlinden , Akira Terao , Haruo Nakamura , Norio Komura , Yasuo Sugimoto , Junichi Ohmura
IPC分类号： H01L21302
CPC分类号： H01L31/1804 , H01L31/022441 , H01L31/0682 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating a back surface point contact silicon solar cell having p-doped regions and n-doped regions on the same side by forming a passivating layer on a surface of the cell having opened windows at the p-doped regions and the n-doped regions, b depositing and patterning a first metal layer on the passivating layer in such a way that the first metal layer comes into contact with the p-doped regions and the n-doped regions, by depositing a first insulator layer of polyimide on the first metal layer, by etching and patterning the first insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by depositing a second insulator layer of polyimide on the first insulator layer of polyimide, by etching and patterning the second insulator layer of polyimide in such a way that the insulator layer has opened windows at, at least one of the p-doped regions and the n-doped regions, by curing the first insulator layer of polyimide by heating at a predetermined second temperature for a predetermined second time, and by depositing a second metal layer on the second insulator layer of polyimide in such a way that the second metal layer comes into contact with the one of the p-doped regions and the n-doped regions. With this, the cell surface to be soldered onto a metallized substrate is well planarized and even to ensure sufficient conductibility, with less voids and less solder fatigue.
摘要翻译：一种制造具有p掺杂区域和n掺杂区域的背表面点接触硅太阳能电池的方法，其通过在具有在p掺杂区域和n-掺杂区域处具有开口窗口的单元的表面上形成钝化层，掺杂区域，b沉积和图案化钝化层上的第一金属层，使得第一金属层与p掺杂区域和n掺杂区域接触，通过在第一金属层上沉积聚酰亚胺的第一绝缘体层通过蚀刻和图案化聚酰亚胺的第一绝缘体层，使得绝缘体层已在p掺杂区域和n掺杂区域中的至少一个处开放窗口，通过沉积第一绝缘体层聚酰亚胺在聚酰亚胺的第一绝缘体层上，通过蚀刻和图案化聚酰亚胺的第二绝缘体层，使得绝缘体层通过固化在至少一个p掺杂区域和n掺杂区域上打开窗口通过在预定的第二温度下加热预定的第二次，并且通过在第二绝缘体层上沉积第二金属层，使得第二金属层与第一绝缘体层接触， p掺杂区域和n掺杂区域。由此，要焊接到金属化基板上的电池表面被很好地平坦化，并且甚至确保足够的导电性，具有较少的空隙和较少的焊料疲劳。

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