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1. 发明授权

US06420747B2 MOSCAP design for improved reliability 有权
标题翻译： MOSCAP设计提高了可靠性
公开(公告)号：US06420747B2
公开(公告)日：2002-07-16
申请号：US09247275
申请日：1999-02-10
申请人： Douglas Duane Coolbaugh , James Stuart Dunn , Peter John Geiss , Douglas Brian Hershberger , Stephen Arthur St. Onge
发明人： Douglas Duane Coolbaugh , James Stuart Dunn , Peter John Geiss , Douglas Brian Hershberger , Stephen Arthur St. Onge
IPC分类号： H01L27108
CPC分类号： H01L29/94 , H01L29/4238
摘要： Reliable metal oxide semiconductor (MOS) devices which exhibit little or no oxide breakdown at the Rx edge during device biasing are provided. The improved reliability is obtained by forming a contact to the polysilicon top conductor over a substantially thicker portion of the dielectric region. A method of fabricating the improved CMOS devices is also disclosed herein.
摘要翻译：提供了在器件偏置期间在Rx边缘处表现出很少或没有氧化物击穿的可靠的金属氧化物半导体（MOS）器件。通过在电介质区域的基本上较厚的部分上形成与多晶硅顶导体的接触来获得改进的可靠性。本文还公开了制造改进的CMOS器件的方法。

2. 发明授权

US06399976B1 Shrink-wrap collar for DRAM deep trenches 失效
标题翻译：用于DRAM深沟的收缩环
公开(公告)号：US06399976B1
公开(公告)日：2002-06-04
申请号：US08467353
申请日：1995-06-06
申请人： Peter John Geiss , Howard Smith Landis , Son Van Nguyen
发明人： Peter John Geiss , Howard Smith Landis , Son Van Nguyen
IPC分类号： H01L27108
CPC分类号： H01L27/10861 , H01L29/66181
摘要： Crystal lattice dislocations in material surrounding trench capacitors and other trench structures are avoided by alteration of stresses such as decreasing compressive stresses and/or development of persistent tensile forces within material deposited in the trench and thus at the material interface formed by the trench. Such alteration of stresses is achieved by volume reduction of a film deposited in the trench. The material is preferably a hydrogenated nitride of silicon, boron or silicon-carbon alloy which may be reduced in volume by partial or substantially complete dehydrogenation during subsequent heat treatment at temperatures where the film will exhibit substantial creep resistance. The amount of volume reduction can be closely controlled by control of concentration of hydrogen or other gas or volatile material in the film. Further fine adjustment of stresses can be achieved in combination with this mechanism by volume reduction of other materials which may be used, in part, to confine the film through other mechanisms such as annealing.
摘要翻译：在沟槽电容器和其他沟槽结构周围的材料中的晶格位错通过改变应力来避免，例如减小压缩应力和/或沉积在沟槽中的材料内部以及因此在由沟槽形成的材料界面处的持续张力的变化。通过在沟槽中沉积的膜的体积减小来实现应力的这种改变。该材料优选是硅，硼或硅 - 碳合金的氢化氮化物，其可以在随后的热处理期间通过部分或基本上完全脱氢体积减小，其中该膜将呈现显着的耐蠕变性。可以通过控制膜中的氢或其它气体或挥发性物质的浓度来严格控制体积减少的量。通过其它材料的体积减少，可以通过结合该机理来实现应力的进一步细微调节，其它材料可以部分地通过其它机制例如退火来限制膜。

3. 发明授权

US6069049A Shrink-wrap collar from DRAM deep trenches 失效
标题翻译：来自DRAM深沟的收缩环
公开(公告)号：US6069049A
公开(公告)日：2000-05-30
申请号：US947022
申请日：1997-10-08
申请人： Peter John Geiss , Howard Smith Landis , Son Van Nguyen
发明人： Peter John Geiss , Howard Smith Landis , Son Van Nguyen
IPC分类号： H01L21/334 , H01L21/8242 , H01L21/20
CPC分类号： H01L27/10861 , H01L29/66181
摘要： Crystal lattice dislocations in material surrounding trench capacitors and other trench structures are avoided by alteration of stresses such as decreasing compressive stresses and/or development of persistent tensile forces within material deposited in the trench and thus at the material interface formed by the trench. Such alteration of stresses is achieved by volume reduction of a film deposited in the trench. The material is preferably a hydrogenated nitride of silicon, boron or silicon-carbon alloy which may be reduced in volume by partial or substantially complete dehydrogenation during subsequent heat treatment at temperatures where the film will exhibit substantial creep resistance. The amount of volume reduction can be closely controlled by control of concentration of hydrogen or other gas or volatile material in the film. Further fine adjustment of stresses can be achieved in combination with this mechanism by volume reduction of other materials which may be used, in part, to confine the film through other mechanisms such as annealing.
摘要翻译：在沟槽电容器和其他沟槽结构周围的材料中的晶格位错通过改变应力来避免，例如减小压缩应力和/或沉积在沟槽中的材料内部以及因此在由沟槽形成的材料界面处的持续张力的变化。通过在沟槽中沉积的膜的体积减小来实现应力的这种改变。该材料优选是硅，硼或硅 - 碳合金的氢化氮化物，其可以在随后的热处理期间通过部分或基本上完全脱氢体积减小，其中该膜将呈现显着的耐蠕变性。可以通过控制膜中的氢或其它气体或挥发性物质的浓度来严格控制体积减少的量。通过其它材料的体积减少，可以通过结合该机理来实现应力的进一步细微调节，其它材料可以部分地通过其它机制例如退火来限制膜。

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