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1. 发明授权

US08077685B2 Method and system for avoiding hanging PDP contexts 有权
标题翻译：避免悬挂PDP上下文的方法和系统
公开(公告)号：US08077685B2
公开(公告)日：2011-12-13
申请号：US12107503
申请日：2008-04-22
申请人： Kaj Olof Inge Johansson , Per Svedberg
发明人： Kaj Olof Inge Johansson , Per Svedberg
IPC分类号： H04W4/00
CPC分类号： H04W76/18 , H04W76/12 , H04W92/24
摘要： A method and system for avoiding hanging Packet Data Protocol (PDP) contexts in a General Packet Radio Service (GPRS) network. A time-out period is included in a request message to create a PDP context. The request message is transmitted from a first GPRS Support Node (GSN) to a second GSN. The second GSN receives the request message and transmits a response message to the first GSN. If the second GSN is unable to create the PDP context within the time-out period, the response message informs the first GSN that creation of the PDP context has been aborted. A Network Service Access Point Identifier (NSAPI) may be included in the response message so that the first GSN may request the second GSN to delete the request for creating the PDP context after a N3-T3 timeout of the first GSN has expired.
摘要翻译：一种用于在通用分组无线业务（GPRS）网络中避免挂起分组数据协议（PDP）上下文的方法和系统。请求消息中包含超时周期以创建PDP上下文。请求消息从第一GPRS支持节点（GSN）发送到第二GSN。第二GSN接收请求消息并向第一GSN发送响应消息。如果第二GSN不能在超时期内创建PDP上下文，则响应消息通知第一GSN已经中止PDP上下文的创建。网络服务接入点标识符（NSAPI）可以包括在响应消息中，使得第一GSN可以在第一GSN的N3-T3超时之后到期时请求第二GSN删除用于创建PDP上下文的请求。

2. 发明授权

US4546401A Two-pole overcurrent protection device 失效
标题翻译：两极过流保护装置
公开(公告)号：US4546401A
公开(公告)日：1985-10-08
申请号：US578383
申请日：1984-02-08
申请人： Per Svedberg
发明人： Per Svedberg
IPC分类号： H02H3/08 , H01L27/02 , H01L29/74 , H01L29/745 , H01L29/87 , H02H9/02 , H02H7/20
CPC分类号： H01L29/87 , H01L27/0251 , H01L29/7455 , H02H9/025
摘要： A two-pole overcurrent protection device arranged to interrupt the current flowing in a conductor if the current exceeds a predetermined level employs a semiconductor wafer on which is formed a turn-off thyristor and a MOS transistor. The control electrode of the transistor is supplied with a voltage dependent on the on-state voltage drop of the thyristor and, therefore, on its current, and at a certain thyristor current the transistor short-circuits one of the emitter junctions of the thyristor to extinguish the thyristor. For firing the thyristor, one of the base layers thereof is supplied with a gate trigger current via a JFET transistor portion formed in the semiconductor wafer with a horizontal channel region. This transistor portion is designed so that its saturation current exceeds, with a suitable margin, the current necessary for firing the thyristor. When a high voltage exists across the thyristor, the transistor portion will limit the current flowing to the base layer to a value which is equal to the saturation current of the transistor portion.
摘要翻译：如果电流超过预定值，则布置成中断在导体中流动的电流的两极过电流保护装置采用其上形成有截止晶闸管和MOS晶体管的半导体晶片。晶体管的控制电极被提供取决于晶闸管的导通电压降的电压，并因此在其电流上，并且在一定的晶闸管电流下，晶体管将晶闸管的发射极之一短路到熄灭晶闸管。为了烧制晶闸管，其基底层之一经由形成在半导体晶片中的具有水平沟道区的JFET晶体管部分被提供栅极触发电流。该晶体管部分被设计成使得其饱和电流以合适的余量超过烧制晶闸管所需的电流。当跨晶闸管存在高电压时，晶体管部分将限制流到基极层的电流达到等于晶体管部分的饱和电流的值。

3. 发明授权

US4437107A Self-igniting thyristor with a plurality of discrete, field controlled zener diodes 失效
标题翻译：具有多个离散的场控齐纳二极管的自点火晶闸管
公开(公告)号：US4437107A
公开(公告)日：1984-03-13
申请号：US306255
申请日：1981-09-28
申请人： Per-Erik Jonsson , Per Svedberg
发明人： Per-Erik Jonsson , Per Svedberg
IPC分类号： H01L29/74 , H01L29/06 , H01L29/40 , H01L29/87 , H01L31/111 , H01L29/02 , H01L29/90
CPC分类号： H01L29/402 , H01L29/87 , H01L31/1113
摘要： A self-igniting thyristor has a zener diode integral with the thyristor, which zener diode bridges the central junction of the thyristor and the breakdown voltage of which determines the breakover voltage of the thyristor. The breakdown voltage of the zener diode is determined by the field geometry in that part of the PN junction of the zener diode which is located near the surface of the semiconductor body, where the breakdown is arranged to take place. A conducting screen is arranged over said portion of the PN junction of the zener diode and is separated from the underlying portion of the surface of the semiconductor body by an insulating layer. The thyristor is provided with means for influencing the potential of the screen, which in turn influences the field geometry and thus the breakdown voltage of the zener diode and the breakover voltage of the thyristor.
摘要翻译：自点火晶闸管具有与晶闸管集成的齐纳二极管，齐纳二极管桥接晶闸管的中心结，其击穿电压决定了晶闸管的跳变电压。齐纳二极管的击穿电压由位于半导体主体表面附近的齐纳二极管的PN结部分中的场几何形状确定，其中布置发生击穿。导电屏布置在齐纳二极管的PN结的所述部分上方并通过绝缘层与半导体本体的下表面分离。晶闸管设置有用于影响屏幕电位的装置，其又影响场几何形状，并因此影响齐纳二极管的击穿电压和晶闸管的断开电压。

4. 发明授权

US4694315A CMOS overvoltage protection circuit utilizing thyristor and majority carrier injecting anti-parallel diode 失效
标题翻译： CMOS过电压保护电路采用晶闸管和大多数载流子注入反并联二极管
公开(公告)号：US4694315A
公开(公告)日：1987-09-15
申请号：US832786
申请日：1986-02-26
申请人： Per Svedberg
发明人： Per Svedberg
IPC分类号： H01L27/02 , H01L29/78
CPC分类号： H01L27/0251
摘要： A semiconductor device comprises a semiconductor circuit of CMOS type and an overvoltage protective circuit integrated therewith. The CMOS circuit and the overvoltage protective circuit are formed in one and the same substrate. The device has a contact electrically connected to the substrate. The CMOS circuit has a plurality of inputs. Between each input and the contact connected to the substrate, there is formed and connected in antiparallel a thyristor and a diode. Each thyristor has a firing circuit for ignition of the thyristor at a voltage level which is internally predetermined by the overvoltage protective circuit. In this way, an overvoltage occurring between an arbitrary pair of inputs will cause ignition of the thyristors of the overvoltage protective circuit and short-circuit of the inputs, which efficiently protects the CMOS circuit against overvoltages.
摘要翻译：半导体器件包括CMOS型半导体电路和与其集成的过电压保护电路。 CMOS电路和过电压保护电路形成在同一基板中。该器件具有电连接到该衬底的触点。 CMOS电路具有多个输入。在每个输入和连接到基板的触点之间，形成并连接在反并联的晶闸管和二极管中。每个晶闸管具有用于在由过压保护电路在内部预定的电压电平下点击晶闸管的点火电路。以这种方式，在任意一对输入之间产生的过电压将导致过电压保护电路的晶闸管点火并且输入短路，这有效地保护CMOS电路免受过电压。

5. 发明授权

US4224634A Externally controlled semiconductor devices with integral thyristor and bridging FET components 失效
标题翻译：具有集成晶闸管和桥接FET组件的外部控制半导体器件
公开(公告)号：US4224634A
公开(公告)日：1980-09-23
申请号：US691618
申请日：1976-06-01
申请人： Per Svedberg
发明人： Per Svedberg
IPC分类号： H01L21/822 , H01L27/04 , H01L27/06 , H01L27/07 , H01L27/144 , H01L29/74 , H01L29/745 , H01L29/749 , H01L29/78 , H01L31/111 , H03K17/79
CPC分类号： H01L31/1113 , H01L27/0705 , H01L27/1443 , H01L29/7412 , H01L29/742 , H01L29/7436 , H01L29/7455 , H03K17/79 , H01L29/0692 , H01L29/0839
摘要： A semi-conductor device includes a semi-conductor body with four layers of alternate P and N conducting types, these layers constituting a thyristor whose outermost layers form emitter junctions with adjacent layers. The semi-conductor body also includes an integrated field effect transistor part for bridging one of the emitter junctions of the thyristor. The source and drain of the field effect transistor include regions of the same conductivity type, one of which forms the emitter layer adjacent to the bridged emitter junction and the other of which comprises a region ohmically connected to the layer adjacent to the emitter layer and of the same type of conductivity as the emitter layer.The field effect transistor has a control electrode and a protective diode is provided in the semi-conductor body for limiting voltage between the control electrode of the field effect transistor and the semi-conductor body. The thyristor is arranged for optical ignition.
摘要翻译：半导体器件包括具有四层交替的P和N导电类型的半导体体，这些层构成晶闸管，其最外层与相邻层形成发射极结。半导体体还包括用于桥接晶闸管的一个发射极结的集成场效应晶体管部分。场效应晶体管的源极和漏极包括相同导电类型的区域，其中之一形成与桥接发射极结相邻的发射极层，另一个包括欧姆连接到与发射极层相邻的层的区域和与发射极层相同类型的导电性。场效应晶体管具有控制电极，并且在半导体体中设置保护二极管，用于限制场效应晶体管的控制电极和半导体体之间的电压。晶闸管布置用于光学点火。

6. 发明授权

US08472422B2 Method and system for avoiding hanging PDP contexts 有权
标题翻译：避免悬挂PDP上下文的方法和系统
公开(公告)号：US08472422B2
公开(公告)日：2013-06-25
申请号：US13293342
申请日：2011-11-10
申请人： Kaj Olof Inge Johansson , Per Svedberg
发明人： Kaj Olof Inge Johansson , Per Svedberg
IPC分类号： H04W4/00
CPC分类号： H04W76/18 , H04W76/12 , H04W92/24
摘要： A method and system for avoiding hanging Packet Data Protocol (PDP) contexts in a General Packet Radio Service (GPRS) network. A time-out period is included in a request message to create a PDP context. The request message is transmitted from a first GPRS Support Node (GSN) to a second GSN. The second GSN receives the request message and transmits a response message to the first GSN. If the second GSN is unable to create the PDP context within the time-out period, the response message informs the first GSN that creation of the PDP context has been aborted. A Network Service Access Point Identifier (NSAPI) may be included in the response message so that the first GSN may request the second GSN to delete the request for creating the PDP context after a N3-T3 timeout of the first GSN has expired.
摘要翻译：一种用于在通用分组无线业务（GPRS）网络中避免挂起分组数据协议（PDP）上下文的方法和系统。请求消息中包含超时周期以创建PDP上下文。请求消息从第一GPRS支持节点（GSN）发送到第二GSN。第二GSN接收请求消息并向第一GSN发送响应消息。如果第二GSN不能在超时期内创建PDP上下文，则响应消息通知第一GSN已经中止PDP上下文的创建。网络服务接入点标识符（NSAPI）可以包括在响应消息中，使得第一GSN可以在第一GSN的N3-T3超时之后到期时，请求第二GSN删除用于创建PDP上下文的请求。

7. 发明申请

US20120057584A1 METHOD AND SYSTEM FOR AVOIDING HANGING PDP CONTEXTS 有权
标题翻译：避免PDP内容的方法和系统
公开(公告)号：US20120057584A1
公开(公告)日：2012-03-08
申请号：US13293342
申请日：2011-11-10
申请人： Kaj Olof Inge Johansson , Per Svedberg
发明人： Kaj Olof Inge Johansson , Per Svedberg
IPC分类号： H04W92/00
CPC分类号： H04W76/18 , H04W76/12 , H04W92/24
摘要： A method and system for avoiding hanging Packet Data Protocol (PDP) contexts in a General Packet Radio Service (GPRS) network. A time-out period is included in a request message to create a PDP context. The request message is transmitted from a first GPRS Support Node (GSN) to a second GSN. The second GSN receives the request message and transmits a response message to the first GSN. If the second GSN is unable to create the PDP context within the time-out period, the response message informs the first GSN that creation of the PDP context has been aborted. A Network Service Access Point Identifier (NSAPI) may be included in the response message so that the first GSN may request the second GSN to delete the request for creating the PDP context after a N3-T3 timeout of the first GSN has expired.
摘要翻译：一种用于在通用分组无线业务（GPRS）网络中避免挂起分组数据协议（PDP）上下文的方法和系统。请求消息中包含超时周期以创建PDP上下文。请求消息从第一GPRS支持节点（GSN）发送到第二GSN。第二GSN接收请求消息并向第一GSN发送响应消息。如果第二GSN不能在超时期内创建PDP上下文，则响应消息通知第一GSN已经中止PDP上下文的创建。网络服务接入点标识符（NSAPI）可以包括在响应消息中，使得第一GSN可以在第一GSN的N3-T3超时之后到期时，请求第二GSN删除用于创建PDP上下文的请求。

8. 发明申请

US20100061386A1 Method and Arrangement Relating to Communications Network Services Request Activation 有权
标题翻译：与通信网络服务请求激活有关的方法和安排
公开(公告)号：US20100061386A1
公开(公告)日：2010-03-11
申请号：US12520657
申请日：2006-12-22
申请人： Lasse Olsson , Jan Backman , Peter Jason , Per Svedberg
发明人： Lasse Olsson , Jan Backman , Peter Jason , Per Svedberg
IPC分类号： H04L12/56
CPC分类号： H04W76/11 , H04W76/12 , H04W80/04
摘要： The present invention relates to an arrangement and method of services request in a packet switched telecommunications network. The network comprises a first server (240) arranged to communicate with a second server (230), said first server being arranged to handle data from an external network (260) and said second server being arranged to handle communication with a user equipment (210). The method comprises: during activation of a subscriber's (210) session information receiving by said first server (240) data comprising two sets of tunnelling endpoint identifiers and IP addresses, and discarding one set of said tunneling endpoint identifiers and IP addresses corresponding to a network controller.
摘要翻译：本发明涉及分组交换电信网络中的业务请求的配置和方法。网络包括布置成与第二服务器（230）通信的第一服务器（240），所述第一服务器被布置为处理来自外部网络（260）的数据，并且所述第二服务器被设置为处理与用户设备（210）的通信）。该方法包括：在激活由所述第一服务器（240）接收的订户（210）会话信息的过程中，包括两组隧道端点标识符和IP地址的数据，并且丢弃与网络对应的一组所述隧道端点标识符和IP地址控制器。

9. 发明申请

US20080267154A1 METHOD AND SYSTEM FOR AVOIDING HANGING PDP CONTEXTS 有权
标题翻译：避免PDP内容的方法和系统
公开(公告)号：US20080267154A1
公开(公告)日：2008-10-30
申请号：US12107503
申请日：2008-04-22
申请人： Kaj Olof Inge Johansson , Per Svedberg
发明人： Kaj Olof Inge Johansson , Per Svedberg
IPC分类号： H04Q7/00
CPC分类号： H04W76/18 , H04W76/12 , H04W92/24
摘要： A method and system for avoiding hanging Packet Data Protocol (PDP) contexts in a General Packet Radio Service (GPRS) network. A time-out period is included in a request message to create a PDP context. The request message is transmitted from a first GPRS Support Node (GSN) to a second GSN. The second GSN receives the request message and transmits a response message to the first GSN. If the second GSN is unable to create the PDP context within the time-out period, the response message informs the first GSN that creation of the PDP context has been aborted. A Network Service Access Point Identifier (NSAPI) may be included in the response message so that the first GSN may request the second GSN to delete the request for creating the PDP context after a N3-T3 timeout of the first GSN has expired.
摘要翻译：一种用于在通用分组无线业务（GPRS）网络中避免挂起分组数据协议（PDP）上下文的方法和系统。请求消息中包含超时周期以创建PDP上下文。请求消息从第一GPRS支持节点（GSN）发送到第二GSN。第二GSN接收请求消息并向第一GSN发送响应消息。如果第二GSN不能在超时期内创建PDP上下文，则响应消息通知第一GSN已经中止PDP上下文的创建。网络服务接入点标识符（NSAPI）可以包括在响应消息中，使得第一GSN可以在第一GSN的N3-T3超时之后到期时，请求第二GSN删除用于创建PDP上下文的请求。

10. 发明授权

US5844272A Semiconductor component for high voltage 失效
标题翻译：半导体元件用于高电压
公开(公告)号：US5844272A
公开(公告)日：1998-12-01
申请号：US900829
申请日：1997-07-25
申请人： Anders Soderbarg , Per Svedberg
发明人： Anders Soderbarg , Per Svedberg
IPC分类号： H01L29/78 , H01L21/8234 , H01L27/06 , H01L29/06 , H01L29/40 , H01L29/49 , H01L29/786 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113
CPC分类号： H01L29/402 , H01L29/405 , H01L29/4916 , H01L29/4983 , H01L29/7813 , H01L29/7824 , H01L29/7835 , H01L29/78624
摘要： A high frequency MOS transistor structure with an extended drift region, which modulates the resistance in the drift region of the MOS transistor. The extended gate layer is obtained by an extra semiconductor layer forming a second MOS structure on top of a thin gate oxide layer. The electrical field will then be uniformly distributed laterally in the extended drift region. This design makes it possible to produce a MOS transistor with a short channel length and an extended drift region with low doping concentration and still having very low on-resistance together with a high breakdown voltage.
摘要翻译：具有扩展漂移区域的高频MOS晶体管结构，其调制MOS晶体管的漂移区域中的电阻。扩展栅极层通过在薄栅极氧化物层的顶部上形成第二MOS结构的额外的半导体层获得。然后电场将在扩展漂移区域中横向均匀分布。该设计使得可以生产具有短沟道长度的MOS晶体管和具有低掺杂浓度的延伸漂移区，并且仍然具有非常低的导通电阻以及高击穿电压。

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