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1. 发明授权

US5561293A Method of failure analysis with CAD layout navigation and FIB/SEM inspection 失效
标题翻译： CAD布局导航和FIB / SEM检查故障分析方法
公开(公告)号：US5561293A
公开(公告)日：1996-10-01
申请号：US425110
申请日：1995-04-20
申请人： Yeng-Kaung Peng , Thao H. Vo , Paul M. Wong
发明人： Yeng-Kaung Peng , Thao H. Vo , Paul M. Wong
IPC分类号： H01J37/30 , H01L21/66 , H01J37/00
CPC分类号： H01J37/3005 , H01L22/20 , H01J2237/24592 , H01J2237/2817 , H01J2237/30411 , H01L22/12
摘要： A method of analyzing a failure of a sample, such as a wafer or a package unit made from a die sliced from the wafer, uses a computer aided design (CAD) tool in conjunction with a dual beam scanner and reverse engineering to improve the yield of the product. The computer aided design tool provides navigation to a location of interest over a layout of a wafer sample which has failed a test. The location of interest of the sample is then inspected using the dual beam scanner. The inspection may be made with either a focused ion beam scan or with a scanning electron microscope scan to provide different types of scan images and information. After inspection, a reverse engineering process (stripping back) is performed on the sample and the sample is inspected again to determine the cause of the failure of the sample. Once the cause of the failure is determined, the manufacturing process can be changed to improve the yield of the wafers.
摘要翻译：分析样品故障的方法，例如晶片或由晶片切片的芯片制成的封装单元，使用计算机辅助设计（CAD）工具结合双光束扫描仪和逆向工程来提高产量的产品。计算机辅助设计工具提供导航到在测试失败的晶片样本的布局上感兴趣的位置。然后使用双光束扫描仪检查样品的感兴趣位置。可以用聚焦离子束扫描或扫描电子显微镜扫描进行检查，以提供不同类型的扫描图像和信息。在检查后，对样品进行逆向工程（剥离），并再次检查样品以确定样品失效的原因。一旦确定了故障的原因，可以改变制造过程以提高晶片的产量。

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