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    • 5. 发明授权
    • Segregated tandem filter for enhanced conversion efficiency in a
thermophotovoltaic energy conversion system
    • 隔离串联滤波器,用于在光伏能量转换系统中提高转换效率
    • US5700332A
    • 1997-12-23
    • US678741
    • 1996-07-11
    • Edward J. BrownPaul F. BaldasaroRandolph J. Dziendziel
    • Edward J. BrownPaul F. BaldasaroRandolph J. Dziendziel
    • H01L31/0216H01L31/04H02N6/00G02B5/28
    • H01L31/02167H02S10/30Y02E10/50
    • A filter system to transmit short wavelength radiation and reflect long wavelength radiation for a thermophotovoltaic energy conversion cell comprises an optically transparent substrate segregation layer with at least one coherent wavelength in optical thickness; a dielectric interference filter deposited on one side of the substrate segregation layer, the interference filter being disposed toward the source of radiation, the interference filter including a plurality of alternating layers of high and low optical index materials adapted to change from transmitting to reflecting at a nominal wavelength .lambda..sub.IF approximately equal to the bandgap wavelength .lambda..sub.g of the thermophotovoltaic cell, the interference filter being adapted to transmit incident radiation from about 0.5.lambda..sub.IF to .lambda..sub.IF and reflect from .lambda..sub.IF to about 2.lambda..sub.IF ; and a high mobility plasma filter deposited on the opposite side of the substrate segregation layer, the plasma filter being adapted to start to become reflecting at a wavelength of about 1.5.lambda..sub.IF.
    • 用于传输短波长辐射并反射用于热光伏能量转换单元的长波长辐射的滤波器系统包括具有光学厚度的至少一个相干波长的光学透明衬底偏析层; 沉积在衬底偏析层的一侧上的介电干涉滤光器,干涉滤光器被设置为朝向辐射源,干涉滤光器包括多个交替层的高和低光学折射率材料,其适于从透射到反射的变化 标称波长λIF近似等于热光伏电池的带隙波长λg,干涉滤波器适于将入射辐射从约0.5λII传输到λIF并从λIF反射至约2λIf; 以及沉积在衬底偏析层的相对侧上的高迁移率等离子体滤波器,等离子体滤波器适于开始在约1.5λIf的波长处反射。
    • 8. 发明授权
    • Thermovoltaic semiconductor device including a plasma filter
    • 包括等离子体过滤器的热伏安半导体器件
    • US5959239A
    • 1999-09-28
    • US867064
    • 1997-06-02
    • Paul F. Baldasaro
    • Paul F. Baldasaro
    • H01L31/0216H01L31/0304H01L31/0693H01L35/34
    • H01L31/0693H01L31/02167H01L31/03042Y02E10/544
    • A thermovoltaic energy conversion device and related method for converting thermal energy into an electrical potential. An interference filter is provided on a semiconductor thermovoltaic cell to pre-filter black body radiation. The semiconductor thermovoltaic cell includes a P/N junction supported on a substrate which converts incident thermal energy below the semiconductor junction band gap into electrical potential. The semiconductor substrate is doped to provide a plasma filter which reflects back energy having a wavelength which is above the band gap and which is ineffectively filtered by the interference filter, through the P/N junction to the source of radiation thereby avoiding parasitic absorption of the unusable portion of the thermal radiation energy.
    • 一种用于将热能转换成电位的热电能转换装置和相关方法。 在半导体热电池上设置干涉滤光片以对黑体辐射进行预过滤。 半导体热电池包括支撑在衬底上的P / N结,其将在半导体结带隙下方的入射热能转换成电势。 半导体衬底被掺杂以提供等离子体滤波器,其反射具有高于带隙的波长并且被干涉滤光器无效滤波的反射能量,通过P / N结到辐射源,从而避免了对 不可用部分的热辐射能量。
    • 9. 发明授权
    • Thermophotovoltaic energy conversion device
    • 热光能转换装置
    • US5753050A
    • 1998-05-19
    • US703156
    • 1996-08-29
    • Greg W. CharachePaul F. BaldasaroJames L. Egley
    • Greg W. CharachePaul F. BaldasaroJames L. Egley
    • H01L31/0216H01L31/052H01L31/068H01L31/06H01L31/18
    • H01L31/02167H01L31/056H01L31/068Y02E10/52Y02E10/547
    • A thermophotovoltaic device and a method for making the thermophotovoltaic device. The device includes an n-type semiconductor material substrate having top and bottom surfaces, a tunnel junction formed on the top surface of the substrate, a region of active layers formed on top of the tunnel junction and a back surface reflector (BSR). The tunnel junction includes a layer of heavily doped n-type semiconductor material that is formed on the top surface of the substrate and a layer of heavily doped p-type semiconductor material formed on the n-type layer. An optional pseudomorphic layer can be formed between the n-type and p-type layers. A region of active layers is formed on top of the tunnel junction. This region includes a base layer of p-type semiconductor material and an emitter layer of n-type semiconductor material. An optional front surface window layer can be formed on top of the emitter layer. An optional interference filter can be formed on top of the emitter layer or the front surface window layer when it is used.
    • 一种热光伏器件及其制造方法。 该器件包括具有顶表面和底表面的n型半导体材料衬底,形成在衬底的顶表面上的隧道结,形成在隧道结顶部的有源层的区域和背面反射器(BSR)。 隧道结包括形成在衬底顶表面上的重掺杂n型半导体材料层和形成在n型层上的重掺杂p型半导体材料层。 可以在n型和p型层之间形成可选的假晶层。 有源层的区域形成在隧道结的顶部。 该区域包括p型半导体材料的基极层和n型半导体材料的发射极层。 可以在发射极层的顶部形成可选的前表面窗口层。 当使用时,可以在发射极层或前表面窗口层的顶部形成可选的干涉滤光片。