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1. 发明申请

US20120199956A1 METHOD FOR RECYCLING A SOURCE SUBSTRATE 审中-公开
标题翻译：回收源基板的方法
公开(公告)号：US20120199956A1
公开(公告)日：2012-08-09
申请号：US13368028
申请日：2012-02-07
申请人： Monique Lecomte , Pascal Guenard , Sophie Rigal , David Sotta , Fabienne Janin , Christelle Veytizou
发明人： Monique Lecomte , Pascal Guenard , Sophie Rigal , David Sotta , Fabienne Janin , Christelle Veytizou
IPC分类号： H01L29/02 , H01L21/762 , H01L21/02
CPC分类号： H01L21/76254 , H01L21/02032
摘要： The present invention relates to process for recycling a source substrate that has a surface region and regions in relief on the surface region, with the regions in relief corresponding to residual regions of a layer of the source substrate that were not being separated from the rest of the source substrate during a prior removal step. The process includes selective electromagnetic irradiation of the source substrate at a wavelength such that the damaged material of the surface region absorbs the electromagnetic irradiation. The present invention also relates to a recycled source substrate and to a process for transferring a layer from a source substrate recycled for this purpose.
摘要翻译：本发明涉及一种用于再循环源衬底的方法，该源衬底具有表面区域和在表面区域上的浮雕区域，其中缓冲区域对应于源衬底层的剩余区域，其不与其余部分分离在先前的去除步骤期间的源极衬底。该方法包括以使得表面区域的损伤材料吸收电磁辐射的波长的源极基板的选择性电磁辐射。本发明还涉及一种再循环源底物和用于从为此目的回收的源底物转移层的方法。

2. 发明授权

US07981767B2 Methods for relaxation and transfer of strained layers and structures fabricated thereby 有权
标题翻译：由此制造的应变层和结构的松弛和转移的方法
公开(公告)号：US07981767B2
公开(公告)日：2011-07-19
申请号：US12341852
申请日：2008-12-22
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译：本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

3. 发明授权

US07736935B2 Passivation of semiconductor structures having strained layers 失效
标题翻译：具有应变层的半导体结构的钝化
公开(公告)号：US07736935B2
公开(公告)日：2010-06-15
申请号：US12341806
申请日：2008-12-22
申请人： Bruce Faure , Pascal Guenard
发明人： Bruce Faure , Pascal Guenard
IPC分类号： H01L21/02
CPC分类号： H01L21/76251 , H01L21/2007 , H01L33/44 , H01S5/3072
摘要： The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices.
摘要翻译：本发明部分地提供了生产具有一个或多个至少部分松弛的应变层的多层半导体结构的方法，其中应变层通过退火至少部分地松弛。特别地，本发明形成了防止退火期间污染物扩散的扩散阻挡层。本发明还包括其中通过蚀刻沟槽等将至少部分松弛的应变层图案化成岛的实施例。本发明还提供由这些方法产生的半导体结构，并且还提供这样的结构，其中半导体材料适用于LED器件，激光器件，光伏器件和其它光电器件。

4. 发明申请

US20100035418A1 PASSIVATION OF SEMICONDUCTOR STRUCTURES HAVING STRAINED LAYERS 失效
标题翻译：具有应变层的半导体结构的钝化
公开(公告)号：US20100035418A1
公开(公告)日：2010-02-11
申请号：US12341806
申请日：2008-12-22
申请人： Bruce FAURE , Pascal Guenard
发明人： Bruce FAURE , Pascal Guenard
IPC分类号： H01L21/20
CPC分类号： H01L21/76251 , H01L21/2007 , H01L33/44 , H01S5/3072
摘要： The present invention provides, in part, methods producing multilayer semiconductor structures having one or more at least partially relaxed strained layers, where the strained layer is at least partially relaxed by annealing. In particular, the invention forms diffusion barriers that prevent diffusion of contaminants during annealing. The invention also includes embodiments where the at least partially relaxed strained layer is patterned into islands by etching trenches and the like. The invention also provides semiconductor structures resulting from these methods, and further, provides such structures where the semiconductor materials are suitable for application to LED devices, laser devices, photovoltaic devices, and other optoelectronic devices.
摘要翻译：本发明部分地提供了生产具有一个或多个至少部分松弛的应变层的多层半导体结构的方法，其中应变层通过退火至少部分地松弛。特别地，本发明形成了防止退火期间污染物扩散的扩散阻挡层。本发明还包括其中通过蚀刻沟槽等将至少部分松弛的应变层图案化成岛的实施例。本发明还提供由这些方法产生的半导体结构，并且还提供这样的结构，其中半导体材料适用于LED器件，激光器件，光伏器件和其它光电器件。

5. 发明授权

US08785293B2 Adaptation of the lattice parameter of a layer of strained material 有权
标题翻译：适应一层应变材料的晶格参数
公开(公告)号：US08785293B2
公开(公告)日：2014-07-22
申请号：US13147749
申请日：2010-02-15
申请人： Pascal Guenard , Frederic Dupont
发明人： Pascal Guenard , Frederic Dupont
IPC分类号： H01L21/30
CPC分类号： H01L21/76251
摘要： The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1 CTE1 or A1>An and CTE1≧CTE3 and CTE5
摘要翻译：本发明涉及一种适应应变材料的晶种层的晶格参数的方法，包括以下连续步骤：a）提供具有晶格参数A1的应变材料种子层的标称晶格参数的结构 A和热膨胀系数CTE3，低粘度层和热膨胀系数CTE1的中间基板; b）施加热处理以松弛应变材料的种子层; c）将种子层转移到热膨胀系数CTE5的支撑基板上，选择中间基板和支撑基板，使得A1＆amp; An和CTE1＆amp; CTE3和CTE5> CTE1或A1> An和CTE1≥CTE3和CTE5

6. 发明申请

US20130285067A1 METHOD FOR FORMING A BURIED METAL LAYER STRUCTURE 有权
标题翻译：形成金属层结构的方法
公开(公告)号：US20130285067A1
公开(公告)日：2013-10-31
申请号：US13988196
申请日：2011-11-16
申请人： Jean-Marc Bethoux , Pascal Guenard
发明人： Jean-Marc Bethoux , Pascal Guenard
IPC分类号： H01L33/32 , H01L31/18 , H01L33/00
CPC分类号： H01L33/32 , H01L21/76254 , H01L31/1852 , H01L31/1856 , H01L31/1892 , H01L33/0075 , H01L33/0079 , H01L33/40 , H01L2924/0002 , H01S5/0425 , H01S5/32341 , H01S2301/173 , Y02E10/544 , Y02P70/521 , H01L2924/00
摘要： The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.
摘要翻译：本发明涉及一种用于制造包括半导体材料的结构的方法，包括：a）注入一种或多种离子物质以形成在半导体材料的衬底中限定至少一个种子层的弱化区域，b）在步骤之前或之后形成 a），在半导体材料中的衬底上的至少一个金属层，c）将至少一个金属层与转移衬底组装，然后在弱化区域处将植入的衬底压裂，d）在半导体材料中形成至少一层，所述至少一个种子层，例如通过外延生长。

7. 发明授权

US09224921B2 Method for forming a buried metal layer structure 有权
标题翻译：掩埋金属层结构的形成方法
公开(公告)号：US09224921B2
公开(公告)日：2015-12-29
申请号：US13988196
申请日：2011-11-16
申请人： Jean-Marc Bethoux , Pascal Guenard
发明人： Jean-Marc Bethoux , Pascal Guenard
IPC分类号： H01L21/00 , H01L33/32 , H01L21/762 , H01L33/00 , H01L31/18 , H01L33/40 , H01S5/042 , H01S5/323
CPC分类号： H01L33/32 , H01L21/76254 , H01L31/1852 , H01L31/1856 , H01L31/1892 , H01L33/0075 , H01L33/0079 , H01L33/40 , H01L2924/0002 , H01S5/0425 , H01S5/32341 , H01S2301/173 , Y02E10/544 , Y02P70/521 , H01L2924/00
摘要： The invention relates to a method for fabricating a structure including a semiconductor material comprising: a) implanting one or more ion species to form a weakened region delimiting at least one seed layer in a substrate of semiconductor material, b) forming, before or after step a), at least one metallic layer on the substrate in semiconductor material, c) assembling the at least one metallic layer with a transfer substrate, then fracturing the implanted substrate at the weakened region, and d) forming at least one layer in semiconductor material on the at least one seed layer, for example, by epitaxy.
摘要翻译：本发明涉及一种用于制造包括半导体材料的结构的方法，包括：a）注入一种或多种离子物质以形成在半导体材料的衬底中限定至少一个种子层的弱化区域，b）在步骤之前或之后形成 a），在半导体材料中的衬底上的至少一个金属层，c）将至少一个金属层与转移衬底组装，然后在弱化区域压裂注入的衬底，以及d）在半导体材料中形成至少一层在至少一个种子层上，例如通过外延生长。

8. 发明授权

US08492244B2 Methods for relaxation and transfer of strained layers and structures fabricated thereby 有权
标题翻译：由此制造的应变层和结构的松弛和转移的方法
公开(公告)号：US08492244B2
公开(公告)日：2013-07-23
申请号：US13081788
申请日：2011-04-07
申请人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
发明人： Pascal Guenard , Bruce Faure , Fabrice Letertre , Michael R. Krames , Nathan F. Gardner , Melvin B. McLaurin
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L21/6835 , H01L31/1848 , H01L31/1852 , H01L31/1892 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L2221/68359 , Y02E10/544 , Y02P70/521
摘要： The present invention provides methods for forming at least partially relaxed strained material layers on a target substrate. The methods include forming islands of the strained material layer on an intermediate substrate, at least partially relaxing the strained material islands by a first heat treatment, and transferring the at least partially relaxed strained material islands to the target substrate. The at least partial relaxation is facilitated by the presence of low-viscosity or compliant layers adjacent to the strained material layer. The invention also provides semiconductor structures having an at least partially relaxed strained material layer, and semiconductor devices fabricated using an at least partially relaxed strained material layer.
摘要翻译：本发明提供了在目标基底上形成至少部分松弛的应变材料层的方法。所述方法包括在中间衬底上形成应变材料层的岛，通过第一热处理至少部分地松弛应变材料岛，并将至少部分松弛的应变材料岛转移到目标衬底。通过存在与应变材料层相邻的低粘度或柔顺层，促进了至少部分松弛。本发明还提供了具有至少部分松弛的应变材料层的半导体结构，以及使用至少部分松弛的应变材料层制造的半导体器件。

9. 发明申请

US20110294245A1 ADAPTATION OF THE LATTICE PARAMETER OF A LAYER OF STRAINED MATERIAL 有权
标题翻译：适应材料层的尺寸参数的适应性
公开(公告)号：US20110294245A1
公开(公告)日：2011-12-01
申请号：US13147749
申请日：2010-02-15
申请人： Pascal Guenard , Frederic Dupont
发明人： Pascal Guenard , Frederic Dupont
IPC分类号： H01L33/02 , H01L31/0304 , H01L21/18 , H01L21/20
CPC分类号： H01L21/76251
摘要： The invention relates to a method of adapting the lattice parameter of a seed layer of a strained material, comprising the following successive steps: a) a structure is provided that has a seed layer of strained material, of lattice parameter A1, of nominal lattice parameter An and of thermal expansion coefficient CTE3, a low-viscosity layer and an intermediate substrate of thermal expansion coefficient CTE1; b) a heat treatment is applied so as to relax the seed layer of strained material; and c) the seed layer is transferred onto a support substrate of thermal expansion coefficient CTE5, the intermediate substrate and the support substrate being chosen so that A1 CTE1 or A1>An and CTE1≧CTE3 and CTE5
摘要翻译：本发明涉及一种适应应变材料的晶种层的晶格参数的方法，包括以下连续步骤：a）提供具有晶格参数A1的应变材料种子层的标称晶格参数的结构 A和热膨胀系数CTE3，低粘度层和热膨胀系数CTE1的中间基板; b）施加热处理以松弛应变材料的种子层; c）将种子层转移到热膨胀系数CTE5的支撑基板上，选择中间基板和支撑基板，使得A1＆amp; An和CTE1＆amp; CTE3和CTE5> CTE1或A1> An和CTE1≥CTE3和CTE5

10. 发明申请

US20110291247A1 RELAXATION AND TRANSFER OF STRAINED MATERIAL LAYERS 有权
标题翻译：应变材料层的放松和转移
公开(公告)号：US20110291247A1
公开(公告)日：2011-12-01
申请号：US13201365
申请日：2010-01-11
申请人： Fabrice Letertre , Bruce Faure , Pascal Guenard
发明人： Fabrice Letertre , Bruce Faure , Pascal Guenard
IPC分类号： H01L21/762 , H01L29/02
CPC分类号： H01L21/02664 , C30B29/403 , C30B33/02 , C30B33/06 , H01L21/02381 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/0254 , H01L21/762 , H01L21/76254
摘要： The present invention relates to a method for the formation of an at least partially relaxed strained material layer, the method comprising the steps of providing a seed substrate; patterning the seed substrate; growing a strained material layer on the patterned seed substrate; transferring the strained material layer from the patterned seed substrate to an intermediate substrate; and at least partially relaxing the strained material layer by a heat treatment.
摘要翻译：本发明涉及形成至少部分松弛的应变材料层的方法，该方法包括以下步骤：提供种子基底; 图案化种子基底; 在图案化种子基底上生长应变材料层; 将所述应变材料层从所述图案化种子基底转移到中间基底; 并通过热处理至少部分地松弛应变材料层。

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