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1. 发明授权

US06812772B2 Method for driving a power semiconductor 失效
标题翻译：驱动功率半导体的方法
公开(公告)号：US06812772B2
公开(公告)日：2004-11-02
申请号：US10246407
申请日：2002-09-19
申请人： Oscar Apeldoorn , Eric Carroll , Peter Streit , André Weber
发明人： Oscar Apeldoorn , Eric Carroll , Peter Streit , André Weber
IPC分类号： H03K1772
CPC分类号： H03K17/0403 , H03K17/08124 , H03K17/105
摘要： The integrated gate dual transistor (IGDT) has two controllable gates (G1, G2), a first gate (G1) being provided on the cathode side and being driven via a low-inductance first gate terminal with a first gate current, and a second gate (G2) being provided on the anode side and being driven via a low-inductance second gate terminal with a second gate current. In the switch-off operation of the IGDT, the rate of rise of the voltage across the IGDT is limited via the two gates. Limiting the rate of rise of the voltage across the IGDT prevents voltages from building up at different speeds in a series circuit of IGDTs, and thus unequal loads from overheating and destroying the individual IGDTs.
摘要翻译：集成栅极双晶体管（IGDT）具有两个可控制栅极（G1，G2），第一栅极（G1）设置在阴极侧并通过具有第一栅极电流的低电感第一栅极端子驱动，第二栅极栅极（G2）设置在阳极侧，并通过具有第二栅极电流的低电感第二栅极端子驱动。在IGDT的关断操作中，IGDT两端的电压上升速率通过两个门限制。限制IGDT两端电压的上升速率可防止IGDT串联电路中以不同速度建立电压，从而防止各个IGDT过热和破坏的负载不相等。

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