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    • 1. 发明授权
    • Safety device of electric circuit and process for producing the same
    • 电路安全装置及其制造方法
    • US06445277B1
    • 2002-09-03
    • US09598694
    • 2000-06-21
    • Satoshi IshikawaOsamu SodaHisafumi Maruo
    • Satoshi IshikawaOsamu SodaHisafumi Maruo
    • H01H8508
    • H05K1/0201H01C7/12H01C7/13H01H37/761H01H2037/046H05K1/0293H05K1/116H05K3/3447H05K2201/0305H05K2201/09572H05K2201/09663H05K2201/09809H05K2201/10022H05K2201/10151H05K2201/10181H05K2203/045
    • A safety device of an electric circuit is provided, in which a thermal fuse securely prevents an accident from occurring when an overcurrent protector is extraordinarily overheated. The safety device includes: first protective means in an overcurrent protector for protecting the electric circuit from an overcurrent, which generates heat to increase its electrical resistance when an overcurrent flows in the electric circuit, whereby reducing or cutting off the overcurrent; and second protective means including a thermal fuse situated in the vicinity of the overcurrent protector containing: a first electrode having a first conductor pattern connected to the overcurrent protector; a second electrode having a second conductor pattern insulated from the first electrode by a gap; and solder connecting the first and second electrodes and melting by heat from the overcurrent protector so as to split into two parts toward the first and second electrodes. According to the safety device, the thermal fuse can quickly operate when the overcurrent protector is extraordinarily overheated and be easily formed by employing an automatic soldering machine and the like.
    • 提供一种电路的安全装置,其中当过电流保护器过热时,热熔丝可靠地防止发生事故。 该安全装置包括:过电流保护器中的第一保护装置,用于保护电路免受过电流的影响,当过电流流过电路时产生热量以增加其电阻,从而减少或切断过电流; 以及包括位于过电流保护器附近的热熔丝的第二保护装置,包括:具有连接到过电流保护器的第一导体图案的第一电极; 第二电极,具有通过间隙与第一电极绝缘的第二导体图案; 并且焊接连接第一和第二电极并通过来自过电流保护器的热量熔化,以朝着第一和第二电极分成两部分。 根据安全装置,当过电流保护器过度过热并且通过使用自动焊接机等容易地形成时,热熔丝可以快速操作。
    • 2. 发明授权
    • Power semiconductor module
    • 功率半导体模块
    • US07994635B2
    • 2011-08-09
    • US12451157
    • 2007-05-18
    • Osamu SodaYuji OhnishiKazunori InamiToshio Uchida
    • Osamu SodaYuji OhnishiKazunori InamiToshio Uchida
    • H01L23/10H01L23/34
    • H01L25/072H01L23/3735H01L2924/0002H01L2924/3511H01L2924/00
    • To suppress warpage of a ceramic substrate, and to prevent a reduction in radiation efficiency.A power semiconductor module includes a module casing fitted with a radiator, and a common unit retained by the module casing. The common unit has: a ceramic substrate having a circuit surface disposed with a semiconductor element, and a radiation surface brought into abutting contact with the radiator; and a package formed by exposing the radiation surface and sealing the circuit surface with heat resistant resin. The circuit surface and the radiation surface are respectively formed of metal layers 51 formed on the ceramic substrate, and the metal layer 51 forming the radiation surface has: by forming a buffer pattern 512 including a groove part extending along a circumferential part thereof, a radiation pattern 510 formed on an inner side of the buffer pattern 512; and an outer peripheral pattern 511 formed on an outer side of the buffer pattern 512. Such a configuration enables warpage of the ceramic substrate to be suppressed, and a reduction in radiation efficiency to be prevented.
    • 为了抑制陶瓷基板的翘曲,并且防止辐射效率的降低。 功率半导体模块包括装配有散热器的模块壳体和由模块壳体保持的公共单元。 公共单元具有:具有设置有半导体元件的电路面的陶瓷基板和与散热器抵接的辐射面; 以及通过暴露辐射表面并用耐热树脂密封电路表面形成的封装。 电路表面和辐射表面分别由形成在陶瓷基板上的金属层51形成,并且形成辐射表面的金属层51具有:形成缓冲图案512,缓冲图案512包括沿其周向部分延伸的槽部,辐射 形成在缓冲图案512的内侧上的图案510; 以及形成在缓冲图案512的外侧的外周图案511.这种构造使陶瓷基板的翘曲被抑制,并且可以防止辐射效率的降低。
    • 3. 发明申请
    • ARC DISCHARGE DEVICE
    • 电弧放电装置
    • US20100128441A1
    • 2010-05-27
    • US12451155
    • 2007-05-18
    • Osamu SodaYuji OhnishiKazunori InamiToshio Uchida
    • Osamu SodaYuji OhnishiKazunori InamiToshio Uchida
    • H05K7/20
    • H05K7/209H01L25/115H01L25/18H01L2924/0002H02M7/003H01L2924/00
    • [Object] To incorporate more semiconductor elements in a small-sized lightweight power semiconductor module provided in an arc discharge device.[Means for Settlement] A power supply unit of an arc discharge device includes a semiconductor module 1, and a radiator fitted onto the semiconductor module 1. The semiconductor module 1 includes a module casing 2, and common units 3a to 3c retained by the module casing 2. Each of the common units 3a to 3c has: a ceramic substrate 50 having a circuit surface disposed with a semiconductor element 54, and a radiation surface on a side opposite to the circuit surface; and a package 35 that exposes the radiation surface, and seals the circuit surface with heat resistant resin. The radiator is fitted onto the module casing 2 to be thereby brought into abutting contact with all of the radiation surfaces of the common units 3a to 3c. Based on such a configuration, more semiconductor elements can be incorporated in a small-sized lightweight power semiconductor module.
    • 将更多的半导体元件并入设置在电弧放电装置中的小型轻量化功率半导体模块中。 [沉降装置]电弧放电装置的电源装置包括半导体模块1和安装在半导体模块1上的散热器。半导体模块1包括模块壳体2和由模块保持的公共单元3a至3c 每个公共单元3a至3c具有:具有设置有半导体元件54的电路表面的陶瓷基板50和与电路表面相对的一侧的辐射表面; 以及暴露辐射表面的封装35,并用耐热树脂密封电路表面。 将散热器安装在模块壳体2上,从而与公共单元3a至3c的所有辐射表面邻接。 基于这种构造,可以在小尺寸轻量级功率半导体模块中并入更多的半导体元件。
    • 4. 发明授权
    • Safety device for electric circuit
    • 电路安全装置
    • US06198376B1
    • 2001-03-06
    • US09397673
    • 1999-09-16
    • Satoshi IshikawaOsamu Soda
    • Satoshi IshikawaOsamu Soda
    • H01H85046
    • H01H37/761H01H85/046H01H2037/046H05K1/0293H05K1/116H05K2201/0305H05K2201/09809H05K2201/10181
    • A safety device for preventing a trouble caused by an abnormal overheating of an electric circuit is provided, which includes: a circuit board; a first circuit pattern; a second circuit pattern; a first electrode connected to the first circuit pattern; a second electrode connected to the second circuit pattern, while enclosing the first electrode without a break, the second electrode being standoff-insulated from the first electrode; and a solder fuse portion made of a solder and formed over and inside the second electrode for bridging the first and second electrodes, wherein the solder fuse portion in a melted state separates onto the first and second electrodes by surface tension of the solder, whereby a circuit between the first and second circuit patterns is broken. Thus, a safety device for an electric circuit, which can be easily formed with the same and normal solder as used for connecting electrical parts, while having high reliability as a fuse and simultaneously being capable of reducing manufacturing cost, can be realized.
    • 提供一种用于防止由电路的异常过热引起的故障的安全装置,其包括:电路板; 第一电路图案; 第二电路图案; 连接到第一电路图案的第一电极; 连接到第二电路图案的第二电极,同时围绕第一电极而不断裂,第二电极与第一电极隔离绝缘; 以及由焊料制成的焊料熔丝部分,形成在第二电极之上和之内,用于桥接第一和第二电极,其中处于熔化状态的焊料熔化部分通过焊料的表面张力分离到第一和第二电极上,由此 第一和第二电路图案之间的电路断开。 因此,可以实现电路的安全装置,其可以容易地形成具有用于连接电气部件的相同和通常的焊料,同时具有作为保险丝的高可靠性并同时能够降低制造成本。
    • 5. 发明授权
    • Circuit protective device with positive temperature coefficient element
and electric junction box with the device
    • 具有正温度系数元件和电接线盒的电路保护装置
    • US6154118A
    • 2000-11-28
    • US321619
    • 1999-05-28
    • Satoshi IshikawaOsamu Soda
    • Satoshi IshikawaOsamu Soda
    • B60R16/02H01C7/02H02H9/02H05K1/02H05K1/18H01C7/13
    • H01C7/027H05K1/02H05K1/18H05K2201/09063H05K2201/09072H05K2201/10651
    • A circuit protective device with a positive temperature coefficient element is provided, which includes: a positive temperature coefficient (hereinafter "PTC") element, made of a conductive composition having a PTC characteristics, provided for shutting off an electric circuit; a circuit board having the PTC element and electrodes to be connected with the PTC element; and a slot formed on the circuit board so as to prevent a low resistance conductive passage from being formed between the electrodes, the low resistance conductive passage being made of powder of the conductive composition released from the PTC element. And also an electric junction box with the above circuit protective device is provided. Thus, the circuit protective device or the electric junction box with the circuit protective device wherein a low resistance conductive passage made of a carbonaceous powder to be released from the PTC element is not formed between the electrodes of the PTC element can be realized.
    • 提供具有正温度系数元件的电路保护装置,其包括:用于切断电路的具有PTC特性的导电组合物制成的正温度系数(以下称为“PTC”)元件; 具有PTC元件和与PTC元件连接的电极的电路板; 以及形成在电路板上的槽,以防止在电极之间形成低电阻导电通道,低电阻导电通道由从PTC元件释放的导电组合物的粉末制成。 还提供了具有上述电路保护装置的电接线盒。 因此,可以实现具有电路保护装置的电路保护装置或电接线盒,其中在PTC元件的电极之间不形成由PTC元件释放的由碳质粉末制成的低电阻导电通道。
    • 7. 发明申请
    • POWER SEMICONDUCTOR MODULE
    • 功率半导体模块
    • US20100127387A1
    • 2010-05-27
    • US12451157
    • 2007-05-18
    • Osamu SodaYuki OhnishiKazunori InamiToshio Uchida
    • Osamu SodaYuki OhnishiKazunori InamiToshio Uchida
    • H01L23/34
    • H01L25/072H01L23/3735H01L2924/0002H01L2924/3511H01L2924/00
    • [Summary][Object] To suppress warpage of a ceramic substrate, and to prevent a reduction in radiation efficiency. [Means for Settlement] A power semiconductor module includes a module casing fitted with a radiator, and a common unit retained by the module casing. The common unit has: a ceramic substrate having a circuit surface disposed with a semiconductor element, and a radiation surface brought into abutting contact with the radiator; and a package formed by exposing the radiation surface and sealing the circuit surface with heat resistant resin. The circuit surface and the radiation surface are respectively formed of metal layers 51 formed on the ceramic substrate, and the metal layer 51 forming the radiation surface has: by forming a buffer pattern 512 including a groove part extending along a circumferential part thereof, a radiation pattern 510 formed on an inner side of the buffer pattern 512; and an outer peripheral pattern 511 formed on an outer side of the buffer pattern 512. Such a configuration enables warpage of the ceramic substrate to be suppressed, and a reduction in radiation efficiency to be prevented.
    • 发明内容抑制陶瓷基板的翘曲,防止辐射效率的降低。 [沉降装置]功率半导体模块包括装配有散热器的模块壳体和由模块壳体保持的公共单元。 公共单元具有:具有设置有半导体元件的电路面的陶瓷基板和与散热器抵接的辐射面; 以及通过暴露辐射表面并用耐热树脂密封电路表面形成的封装。 电路表面和辐射表面分别由形成在陶瓷基板上的金属层51形成,并且形成辐射表面的金属层51具有:形成缓冲图案512,缓冲图案512包括沿其周向部分延伸的槽部,辐射 形成在缓冲图案512的内侧上的图案510; 以及形成在缓冲图案512的外侧上的外周图案511.这种构造使陶瓷基板的翘曲被抑制,并且可以防止辐射效率的降低。