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1. 发明授权

US08159749B2 Antireflection coating and display device 有权
标题翻译：防反射涂层和显示装置
公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译：在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有氮（N）元素作为添加剂。抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。

2. 发明授权

US07915062B2 Method of manufacturing a TFT array substrate 有权
标题翻译：制造TFT阵列基板的方法
公开(公告)号：US07915062B2
公开(公告)日：2011-03-29
申请号：US11762398
申请日：2007-06-13
申请人： Shinichi Yano , Tadaki Nakahori , Nobuaki Ishiga
发明人： Shinichi Yano , Tadaki Nakahori , Nobuaki Ishiga
IPC分类号： H01L21/00 , H01L21/22
CPC分类号： H01L29/4908 , H01L27/12 , H01L27/124 , H01L29/458
摘要： A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.
摘要翻译： TFT阵列基板包括具有欧姆接触膜和形成在欧姆接触膜上的源电极和漏电极的TFT。它还包括与漏电极电连接的像素电极。源电极和漏极由含有Ni作为添加剂的Al合金制成。

3. 发明授权

US07470571B2 Thin film transistor array substrate and method of producing the same 有权
公开(公告)号：US07470571B2
公开(公告)日：2008-12-30
申请号：US11951832
申请日：2007-12-06
申请人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
发明人： Nobuaki Ishiga , Takuji Yoshida , Yuichi Masutani , Shingo Nagano
IPC分类号： H01L21/00
CPC分类号： G02F1/136227 , G02F1/133555 , G02F2001/136236 , H01L21/32139 , H01L27/124
摘要： A method of producing a thin film transistor array substrate which includes an insulating substrate, a display pixel having a pixel electrode connected to a drain electrode, a gate wiring, and a source wiring perpendicular to the gate wiring, comprising forming a first thin metal multi-layer film an upper layer of which includes aluminum, and spreading a photo-resist, forming the photo-resist to a thickness less in an area connected to a second thin metal film than other area, patterning the first thin metal film, reducing a thickness of the photo-resist layer and removing the photo-resist in the area, removing the upper layer in the area to expose a lower layer, forming an interlayer insulating film and patterning it to expose the lower layer in the area, and patterning the second thin metal film to include the area, to connect the lower layer to the second thin metal film.

4. 发明申请

US20080012016A1 TRANSPARENT CONDUCTIVE FILM, SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY UNIT 有权
标题翻译：透明导电膜，半导体器件和主动矩阵显示单元
公开(公告)号：US20080012016A1
公开(公告)日：2008-01-17
申请号：US11767217
申请日：2007-06-22
申请人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Toru Takeguchi , Kazumasa Kawase
发明人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Toru Takeguchi , Kazumasa Kawase
IPC分类号： H01L33/00 , H01B1/02
CPC分类号： H01J29/28 , G02F1/13439 , G02F1/13458 , H01L27/3244 , H01L51/5206 , H01L51/5218 , H01L51/5234 , H01L2227/323
摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
摘要翻译：基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。

5. 发明申请

US20070284742A1 SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY DEVICE 有权
标题翻译：半导体器件和有源矩阵显示器件
公开(公告)号：US20070284742A1
公开(公告)日：2007-12-13
申请号：US11741193
申请日：2007-04-27
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L29/4908 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.
摘要翻译：半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

6. 发明授权

US10716218B2 Display device and method for manufacturing the same 有权
公开(公告)号：US10716218B2
公开(公告)日：2020-07-14
申请号：US13791655
申请日：2013-03-08
申请人： Masami Hayashi , Kenichi Miyamoto , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura
发明人： Masami Hayashi , Kenichi Miyamoto , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura
IPC分类号： H05K3/06 , G06F3/041 , H05K1/09 , G06F3/044
摘要： A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.

7. 发明授权

US08248564B2 Liquid crystal display device and method of manufacturing the same 有权
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US08248564B2
公开(公告)日：2012-08-21
申请号：US12401226
申请日：2009-03-10
申请人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
发明人： Shingo Nagano , Osamu Miyakawa , Nobuaki Ishiga
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , H01L27/124
摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.
摘要翻译：液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

8. 发明申请

US20120112194A1 SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译：本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

9. 发明授权

US08031283B2 Active matrix substrate and method of manufacturing the same 有权
标题翻译：有源矩阵基板及其制造方法
公开(公告)号：US08031283B2
公开(公告)日：2011-10-04
申请号：US12353480
申请日：2009-01-14
申请人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
发明人： Toshio Araki , Osamu Miyakawa , Nobuaki Ishiga , Shingo Nagano
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F2201/123
摘要： An active matrix substrate according to one aspect of the present invention is a TFT array substrate including a TFT. The active matrix substrate includes a gate signal line electrically connected to a gate electrode of the TFT, a first insulating film formed above the gate signal line, an auxiliary capacitance electrode formed above the first insulating film and supplied with a common potential, a second insulating film formed above the auxiliary capacitance electrode, a source signal line formed above the second insulating film and electrically connected to a source electrode of the TFT, a third insulating film formed above the source signal line, and a pixel electrode formed above the third insulating film so that the pixel electrode overlaps with a part of the auxiliary capacitance electrode.
摘要翻译：根据本发明的一个方面的有源矩阵基板是包括TFT的TFT阵列基板。有源矩阵基板包括电连接到TFT的栅电极的栅极信号线，形成在栅极信号线上方的第一绝缘膜，形成在第一绝缘膜上方并被提供公共电位的辅助电容电极，第二绝缘形成在辅助电容电极上的膜，形成在第二绝缘膜上方并与TFT的源电极电连接的源极信号线，形成在源极信号线上方的第三绝缘膜，以及形成在第三绝缘膜上方的像素电极使得像素电极与辅助电容电极的一部分重叠。

10. 发明申请

US20110012121A1 THIN FILM TRANSISTOR IN WHICH AN INTERLAYER INSULATING FILM COMPRISES TWO DISTINCT LAYERS OF INSULATING MATERIAL 有权
标题翻译：薄膜绝缘膜的薄膜晶体管包含绝缘材料的两个不同层
公开(公告)号：US20110012121A1
公开(公告)日：2011-01-20
申请号：US12887865
申请日：2010-09-22
申请人： KAZUNORI INOUE , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
发明人： KAZUNORI INOUE , Harumi Murakami , Toshio Araki , Nobuaki Ishiga
IPC分类号： H01L33/08
CPC分类号： G02F1/1341 , G02F1/1345 , G02F1/136213 , G02F2201/121 , H01L27/124 , H01L27/1248
摘要： A display apparatus including a TFT array substrate on which TFTs are formed in an array, a counter substrate disposed so as to face the TFT array substrate, and a sealing pattern for adhering the TFT array substrate and the counter substrate to each other, wherein the counter substrate has a counter electrode, and the TFT array substrate has a first conductive layer, a first insulating film formed on the first conductive layer, a second conductive layer disposed so as to intersect the first conductive layer via the first insulating film, a second insulating film formed on the second conductive layer and having at least two layers, and common electrode wiring provided below the sealing pattern and electrically connected to the counter electrode by the sealing pattern, and the sealing pattern overlaps the second conductive layer via the second insulating film.
摘要翻译：一种显示装置，包括阵列中形成有TFT的TFT阵列基板，与TFT阵列基板相对配置的对置基板和用于将TFT阵列基板和对置基板粘合的密封图案，其中，相对基板具有对电极，TFT阵列基板具有第一导电层，形成在第一导电层上的第一绝缘膜，经由第一绝缘膜与第一导电层相交的第二导电层，第二导电层形成在第二导电层上并且具有至少两层的绝缘膜，以及设置在密封图案下方并通过密封图案电连接到对电极的公共电极布线，并且密封图案经由第二绝缘膜与第二导电层重叠。

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