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1. 发明授权

US5970382A Process for forming coatings on semiconductor devices 失效
标题翻译：在半导体器件上形成涂层的工艺
公开(公告)号：US5970382A
公开(公告)日：1999-10-19
申请号：US13247
申请日：1998-01-26
申请人： Nitin B. Shah
发明人： Nitin B. Shah
IPC分类号： H01L21/316 , H01L21/31 , H01L21/469
CPC分类号： H01L21/0214 , H01L21/02249 , H01L21/02255 , H01L21/31662
摘要： A process for forming coatings and films from a gaseous reactant onto a semiconductor device is disclosed. The process includes preheating a gas to a temperature so that the gas will immediately react with the semiconductor wafer. After being preheated, the gas is contacted with the wafer under controlled conditions in order to form a uniform film. For instance, in one embodiment, a gas containing dinitrogen oxide is preheated until the dinitrogen oxide disassociates into nitric oxide. The nitric oxide is then contacted with the wafer to form an oxide coating. In an alternative embodiment, gaseous hydrogen and oxygen are preheated to a temperature sufficient to form steam, which subsequently chemically reacts with the wafer.
摘要翻译：公开了一种从气态反应物形成到半导体器件上的涂层和膜的方法。该方法包括将气体预热至一定温度，使得气体将立即与半导体晶片反应。在预热之后，气体在受控条件下与晶片接触以形成均匀的膜。例如，在一个实施方案中，将含有二氧化氮的气体预热直到二氧化氮分解成一氧化氮。然后将一氧化氮与晶片接触以形成氧化物涂层。在替代实施例中，将气态氢气和氧气预热到足以形成蒸汽的温度，其随后与晶片发生化学反应。

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