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1. 发明授权

US07291544B2 Homoepitaxial gallium nitride based photodetector and method of producing 有权
标题翻译：同质外延氮化镓基光电探测器及其制造方法
公开(公告)号：US07291544B2
公开(公告)日：2007-11-06
申请号：US10932127
申请日：2004-09-01
申请人： Mark Philip D'Evelyn , Nicole Andrea Evers , Kanin Chu
发明人： Mark Philip D'Evelyn , Nicole Andrea Evers , Kanin Chu
IPC分类号： H01L21/20
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要： A photodetector (100, 200, 300) comprising a gallium nitride substrate, at least one active layer (104, 302) disposed on the substrate (102, 202, 306), and a conductive contact structure (106, 210, 308) affixed to the active layer (104, 302) and, in some embodiments, the substrate (102, 202, 306). The invention includes photodetectors (100, 200, 300) having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers (104, 302) may comprise Ga1-x-yAlxInyN1-z-w PzAsw, or, preferably, Ga1-xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector (100, 200, 300) is also disclosed.
摘要翻译：包括氮化镓衬底，设置在衬底（102,202,306）上的至少一个有源层（104,302）的光电探测器（100,200,300）和固定在衬底上的导电接触结构（106,210,308）到有源层（104,302），并且在一些实施例中为衬底（102,202,306）。本发明包括具有金属 - 半导体 - 金属结构，P-i-N结构和肖特基势垒结构的光电探测器（100,200,300）。有源层（104,302）可以包括Ga 1-xy 1 Al x Si x N 1 N z 或者优选地，Ga 1-x Al 2 N N。氮化镓衬底包括单晶氮化镓晶片，并且具有小于约10 -5 cm -2的位错密度。还公开了制造光电检测器（100,200,300）的方法。

2. 发明授权

US07145345B2 Current transformers for partial discharge detection on aircraft cables and wires 失效
标题翻译：用于飞机电缆和电线局部放电检测的电流互感器
公开(公告)号：US07145345B2
公开(公告)日：2006-12-05
申请号：US10745141
申请日：2003-12-23
申请人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
发明人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
IPC分类号： G01R31/02
CPC分类号： H01F27/2847 , G01R31/1272 , H01F38/30 , H01F41/08 , H01F2027/2861
摘要： A technique for detecting defects in aircraft wiring, such as for detecting partial discharges or arcing in wiring or cables is disclosed. A high frequency current transformer (HFCT) is fixingly positioned in contact with a wire so that the wire is encircled by the HFCT. Partial discharges from a damaged wire so encircled will induce a current in the HFCT proportional to the current of the discharge. The HFCT includes a conductive coil-like pattern formed onto a flexible insulating material. The insulating material has slits between each coil-turn. The HFCT also includes a core of flexible material fitted between the coil-turns through the slits.
摘要翻译：公开了一种用于检测飞机布线中的缺陷的技术，例如用于检测布线或电缆中的局部放电或电弧。高频电流互感器（HFCT）固定地定位成与电线接触，使得电线被HFCT包围。如此包围的受损电线部分放电将导致HFCT中的电流与放电电流成比例。 HFCT包括形成在柔性绝缘材料上的导电线圈状图案。绝缘材料在每个线圈匝之间具有狭缝。 HFCT还包括通过狭缝安装在线圈匝之间的柔性材料芯。

3. 发明授权

US07030621B2 Low current AC partial discharge diagnostic system for wiring diagnostics 有权
标题翻译：用于接线诊断的低电流AC局部放电诊断系统
公开(公告)号：US07030621B2
公开(公告)日：2006-04-18
申请号：US10838474
申请日：2004-05-04
申请人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
发明人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
IPC分类号： G01R31/08
CPC分类号： G01R31/1272 , G01R31/021
摘要： A system and method for detecting partial discharges or arcing in wiring or cables is disclosed. The system employs a high-voltage AC power source to generate a high-voltage low-current AC waveform, which is propagated through a selected wire, which in turn, produces the return signal. The return signal is processed using a signal processor and the analyzed for indications of the occurrence of a partial discharge. The method detects damage to a selected wire by utilizing high voltage, low current AC waveforms to induce partial discharges in a controlled manner and detecting a return signal resulting from the discharge.
摘要翻译：公开了一种用于检测布线或电缆中的局部放电或电弧的系统和方法。该系统采用高压交流电源产生高电压的低电流交流波形，该波形通过选定的导线传播，这又产生返回信号。使用信号处理器处理返回信号，并分析了局部放电发生的指示。该方法通过利用高电压，低电流AC波形来检测对所选导线的损坏，以受控方式诱发部分放电并检测由放电产生的返回信号。

4. 发明授权

US07053413B2 Homoepitaxial gallium-nitride-based light emitting device and method for producing 有权
标题翻译：同质外延氮化镓系发光器件及其制造方法
公开(公告)号：US07053413B2
公开(公告)日：2006-05-30
申请号：US10831865
申请日：2004-04-26
申请人： Mark Philip D'Evelyn , Nicole Andrea Evers , Steven Francis LeBoeuf , Xian-An Cao , An-Ping Zhang
发明人： Mark Philip D'Evelyn , Nicole Andrea Evers , Steven Francis LeBoeuf , Xian-An Cao , An-Ping Zhang
IPC分类号： H01L27/15
CPC分类号： H01L33/32
摘要： A light emitting device, such as a light emitting diode or a laser diode. The light emitting device comprises a light emitting semiconductor active region disposed on a substrate. The substrate comprises an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm a GaN single crystal having a dislocation density of less than 104 per cm2 and an optical absorption coefficient below about 100 cm−1 at wavelengths between 700 and 465 nm. A method of making such a light emitting device is also provided.
摘要翻译：发光器件，例如发光二极管或激光二极管。发光器件包括设置在衬底上的发光半导体有源区。衬底包括在700和465nm之间的波长在约100cm -1以下的光吸收系数，位错密度小于10 4 / cm 2 / cm 2的GaN单晶，并且在700和465nm之间的波长处的光吸收系数低于约100cm -1。还提供了制造这种发光器件的方法。

5. 发明授权

US06806508B2 Homoepitaxial gallium nitride based photodetector and method of producing 有权
标题翻译：同质外延氮化镓基光电探测器及其制造方法
公开(公告)号：US06806508B2
公开(公告)日：2004-10-19
申请号：US09839941
申请日：2001-04-20
申请人： Mark Philip D'Evelyn , Nicole Andrea Evers , Kanin Chu
发明人： Mark Philip D'Evelyn , Nicole Andrea Evers , Kanin Chu
IPC分类号： H01L3300
CPC分类号： H01L31/0304 , H01L31/022408 , H01L31/108 , Y02E10/544 , Y02P70/521
摘要： A photodetector comprising a gallium nitride substrate, at least one active layer disposed on the substrate, and a conductive contact structure affixed to the active layer and, in some embodiments, the substrate. The invention includes photodetectors having metal-semiconductor-metal structures, P-i-N structures, and Schottky-barrier structures. The active layers may comprise Ga1−x−yAlxInyN1−z−wPzAsw, or, preferably, Ga1−xAlxN. The gallium nitride substrate comprises a single crystal gallium nitride wafer and has a dislocation density of less than about 105 cm−2. A method of making the photodetector is also disclosed.
摘要翻译：一种光电检测器，包括氮化镓衬底，设置在衬底上的至少一个有源层和固定到有源层的导电接触结构，以及在一些实施例中，衬底。本发明包括具有金属 - 半导体 - 金属结构，P-i-N结构和肖特基势垒结构的光电探测器。有源层可以包括Ga1-x-yAlxInyN1-z-wPzAsw，或者优选地，Ga1-xAlxN。氮化镓衬底包括单晶氮化镓晶片，并且具有小于约10 -5 cm -2的位错密度。还公开了制造光电检测器的方法。

6. 发明授权

US08089097B2 Homoepitaxial gallium-nitride-based electronic devices and method for producing same 有权
标题翻译：同质外延氮化镓基电子器件及其制造方法
公开(公告)号：US08089097B2
公开(公告)日：2012-01-03
申请号：US10329982
申请日：2002-12-27
申请人： Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
发明人： Mark Phillip D'Evelyn , Nicole Andrea Evers , An-Ping Zhang , Jesse Berkley Tucker , Jeffrey Bernard Fedison
IPC分类号： H01L29/66
CPC分类号： C30B25/02 , C30B29/403 , C30B29/406 , H01L21/02389 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/6631 , H01L29/66318 , H01L29/66462 , H01L29/732 , H01L29/7371 , H01L29/7787 , H03K17/567
摘要： There is provided an electronic device. The electronic device includes at least one epitaxial semiconductor layer disposed on a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2. A method of forming an electronic device is also provided. The method includes providing a single crystal substrate comprised of gallium nitride having a dislocation density less than about 105 per cm2, and homoepitaxially forming at least one semiconductor layer on the substrate.
摘要翻译：提供电子设备。该电子器件包括至少一个外延半导体层，该外延半导体层设置在由氮化镓构成的单晶衬底上，位错密度小于约每平方厘米105。还提供了一种形成电子设备的方法。该方法包括提供由氮化镓构成的单晶衬底，该氮化镓具有小于每平方厘米约105的位错密度，以及在该衬底上同轴外延形成至少一个半导体层。

7. 发明授权

US07142291B2 Detection of partial discharge or arcing in wiring via fiber optics 失效
标题翻译：通过光纤检测布线中的局部放电或电弧
公开(公告)号：US07142291B2
公开(公告)日：2006-11-28
申请号：US10745245
申请日：2003-12-23
申请人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
发明人： Janos Gyorgy Sarkozi , Nicole Andrea Evers
IPC分类号： G01N21/00
CPC分类号： G01D5/268 , G01D7/005 , G01N21/67 , G01R31/008 , G01R31/1218 , G02B6/0003
摘要： A cable, system and method for detecting partial discharges or arcing in wiring or cables via fiber optics are provided. The cable for detecting partial discharges includes a conductor for carrying electrical signals; at least one fluorescent optical fiber for detecting light generated by a partial discharge; and a first transparent layer surrounding the conductor for supporting the at least one fluorescent optical fiber generally parallel to the conductor. By employing a fluorescent optical fiber, incident light generated by a partial discharge along a length of the optical fiber will be transmitted via the optical fiber to an optical receiver for determining a partial discharge has occurred.
摘要翻译：提供了一种用于通过光纤检测布线或电缆中的局部放电或电弧的电缆，系统和方法。用于检测局部放电的电缆包括用于承载电信号的导体; 用于检测由局部放电产生的光的至少一个荧光光纤; 以及围绕所述导体的第一透明层，用于支撑所述至少一个与导体平行的荧光光纤。通过使用荧光光纤，沿着光纤的长度通过局部放电产生的入射光将经由光纤传输到用于确定局部放电的光接收器。

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