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1. 发明申请

US20050092231A1 Method and apparatus for making crystals without a pre-melt step 审中-公开
标题翻译：无预熔融步骤制造晶体的方法和装置
公开(公告)号：US20050092231A1
公开(公告)日：2005-05-05
申请号：US10696125
申请日：2003-10-29
申请人： Daniel Hawtof , Nicholas LeBlond , Christopher Thomas
发明人： Daniel Hawtof , Nicholas LeBlond , Christopher Thomas
IPC分类号： C30B9/00 , C30B11/00 , C30B17/00 , C30B21/02 , C30B28/06 , C30B29/12
CPC分类号： C30B11/00 , C30B29/12
摘要： A method of making crystals includes suspending a porous preform made of a crystal raw material in a hermetically-sealed chamber, heating the porous preform to a selected treatment temperature that enables reaction between a fluorinating agent and oxide impurities in the porous preform and reacting the fluorinating agent with the oxide impurities at the selected treatment temperature for a selected time period, filling a crucible in the hermetically-sealed chamber with a melt formed from at least a portion of the porous preform, and progressively moving the melt through a temperature gradient zone defined inside the hermetically-sealed chamber. An apparatus for making crystals includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within the muffle furnace, at least two temperature-controlled zones defined inside the muffle furnace, a crystal growth crucible disposed inside the muffle furnace, an actuator operable to translate the crucible along a length of the muffle furnace, and means for suspending a preform inside the muffle furnace.
摘要翻译：制造晶体的方法包括将由结晶原料制成的多孔预成型体悬浮在气密密封的室中，将多孔预型体加热到选定的处理温度，使得氟化剂与多孔预型体中的氧化物杂质反应，并使氟化在所选择的处理温度下将氧化物杂质与所选择的时间段内的氧化物杂质一起，用至少一部分多孔预型体形成的熔体填充密封室中的坩埚，并逐渐移动熔体通过定义的温度梯度区密封室内。用于制造晶体的装置包括由无孔耐火材料制成的气密密封马弗炉，至少一个用于马弗炉内的气态物质的进出口，至少两个限定在马弗炉内的温度控制区，布置在马弗炉内部的晶体生长坩埚，可操作以沿着马弗炉的长度平移坩埚的致动器，以及用于将预制件悬挂在马弗炉内部的装置。

2. 发明申请

US20050092232A1 Method and apparatus for making a crystal pre-melt 失效
标题翻译：制造晶体预熔体的方法和装置
公开(公告)号：US20050092232A1
公开(公告)日：2005-05-05
申请号：US10696453
申请日：2003-10-29
申请人： Daniel Hawtof , Nicholas LeBlond , Christopher Thomas
发明人： Daniel Hawtof , Nicholas LeBlond , Christopher Thomas
IPC分类号： C30B11/00 , C30B29/12 , C30B35/00 , C30B9/00 , C30B17/00 , C30B21/02 , C30B28/06
CPC分类号： C30B29/12 , C30B11/00 , C30B35/00
摘要： An apparatus for making a crystal pre-melt includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within the muffle furnace, a temperature-controlled zone defined inside the muffle furnace, and a crucible for holding crystal raw material in solid or molten form inside the muffle furnace. The crystal pre-melt is made by disposing crystal raw material in loose powder, pressed powder, granular, or densified form in the temperature-controlled zone, heating the temperature-controlled zone to a treatment temperature that enables reaction between a fluorinating agent and oxides in the crystal raw material, reacting the fluorinating agent with the crystal raw material to produce volatile gases, removing the volatile gases from the muffle furnace, heating the crystal raw material to form a melt, and solidifying the melt to form the crystal pre-melt.
摘要翻译：用于制造晶体预熔体的装置包括由无孔耐火材料制成的气密密封马弗炉，至少一个用于马弗炉内的气态物质进出口的端口，限定在马弗炉内的温度控制区炉，以及用于在马弗炉内保持固体或熔融形式的晶体原料的坩埚。通过在温度控制区域中将松散粉末，压粉，颗粒状或致密化形式的晶体原料设置在温度控制区域中，将温度控制区域加热至能够使氟化剂和氧化物之间的反应的处理温度在晶体原料中，使氟化剂与晶体原料反应以产生挥发性气体，从马弗炉中除去挥发性气体，加热晶体原料以形成熔体，并使熔体固化形成晶体预熔体。

3. 发明授权

US07083678B2 Method and apparatus for making a crystal pre-melt 失效
标题翻译：制造晶体预熔体的方法和装置
公开(公告)号：US07083678B2
公开(公告)日：2006-08-01
申请号：US10696453
申请日：2003-10-29
申请人： Daniel W. Hawtof , Nicholas LeBlond , Christopher S. Thomas
发明人： Daniel W. Hawtof , Nicholas LeBlond , Christopher S. Thomas
IPC分类号： C30B13/02 , C30B13/08 , C30B13/28
CPC分类号： C30B29/12 , C30B11/00 , C30B35/00
摘要： An apparatus for making a crystal pre-melt includes a hermetically-sealed muffle furnace made of a non-porous refractory material, at least one port for entry and exit of gaseous substance within the muffle furnace, a temperature-controlled zone defined inside the muffle furnace, and a crucible for holding crystal raw material in solid or molten form inside the muffle furnace. The crystal pre-melt is made by disposing crystal raw material in loose powder, pressed powder, granular, or densified form in the temperature-controlled zone, heating the temperature-controlled zone to a treatment temperature that enables reaction between a fluorinating agent and oxides in the crystal raw material, reacting the fluorinating agent with the crystal raw material to produce volatile gases, removing the volatile gases from the muffle furnace, heating the crystal raw material to form a melt, and solidifying the melt to form the crystal pre-melt.
摘要翻译：用于制造晶体预熔体的装置包括由无孔耐火材料制成的气密密封马弗炉，至少一个用于马弗炉内气体物质进出口的端口，限定在马弗炉内的温度控制区域炉，以及用于在马弗炉内保持固体或熔融形式的晶体原料的坩埚。通过在温度控制区域中将松散粉末，压粉，颗粒状或致密化形式的晶体原料设置在温度控制区域中，将温度控制区域加热至能够使氟化剂和氧化物之间的反应的处理温度在晶体原料中，使氟化剂与晶体原料反应以产生挥发性气体，从马弗炉中除去挥发性气体，加热晶体原料以形成熔体，并使熔体固化形成晶体预熔体。

4. 发明申请

US20060037531A1 Furnace purification and metal fluoride crystals grown in a purified furnace 失效
标题翻译：在纯化炉中生长的炉子净化和金属氟化物晶体
公开(公告)号：US20060037531A1
公开(公告)日：2006-02-23
申请号：US10971315
申请日：2004-10-22
申请人： Michele Fredholm , Jeffrey Kohli , Nicholas LeBlond , Alexandre Mayolet , Viktoria Pshenitsyna , Pawan Saxena , Paul Schermerhorn
发明人： Michele Fredholm , Jeffrey Kohli , Nicholas LeBlond , Alexandre Mayolet , Viktoria Pshenitsyna , Pawan Saxena , Paul Schermerhorn
IPC分类号： C30B11/00 , C30B17/00 , C30B9/00 , C30B21/02 , C30B28/06
CPC分类号： C30B11/00 , C30B29/12
摘要： The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
摘要翻译：本发明涉及一种用于生长适用于200nm以下的光刻系统的金属氟化物晶体的方法，该方法至少包括将晶体生长炉加热到1400-2000℃的温度的步骤。在使用炉子生长金属氟化物单晶之前，通过除去硫和氯来净化炉。

5. 发明授权

US07306673B2 Furnace purification and metal fluoride crystal grown in a purified furnace 失效
标题翻译：炉净化和金属氟化物晶体在纯化炉中生长
公开(公告)号：US07306673B2
公开(公告)日：2007-12-11
申请号：US10971315
申请日：2004-10-22
申请人： Michelle M. L. Fredholm , Jeffrey T. Kohli , Nicholas LeBlond , Alexandre M. Mayolet , Viktoria Pshenitsyna , Pawan Saxena , Paul M. Schermerhorn
发明人： Michelle M. L. Fredholm , Jeffrey T. Kohli , Nicholas LeBlond , Alexandre M. Mayolet , Viktoria Pshenitsyna , Pawan Saxena , Paul M. Schermerhorn
IPC分类号： C30B11/00
CPC分类号： C30B11/00 , C30B29/12
摘要： The invention is directed to a method for growing metal fluoride crystals suitable for use in below 200 nm optical lithography systems, the method comprising including at least the step of heating a crystal growth furnace to a temperature in the range of 1400-2000° C. to purify the furnace by removal of sulfur and chlorine prior to using the furnace for growing metal fluoride single crystals.
摘要翻译：本发明涉及一种用于生长适用于200nm以下的光刻系统的金属氟化物晶体的方法，该方法至少包括将晶体生长炉加热到1400-2000℃的温度的步骤。在使用炉子生长金属氟化物单晶之前，通过除去硫和氯来净化炉。

6. 发明申请

US20050139146A1 Method for preparing optical fluoride crystals 审中-公开
标题翻译：氟化物晶体的制备方法
公开(公告)号：US20050139146A1
公开(公告)日：2005-06-30
申请号：US10982678
申请日：2004-11-04
申请人： Thomas Glasson , Nicholas LeBlond , Alexandre Mayolet
发明人： Thomas Glasson , Nicholas LeBlond , Alexandre Mayolet
IPC分类号： G02B1/02 , C30B11/00 , C30B29/12 , C30B1/00 , G03F9/00
CPC分类号： C30B11/00 , C30B29/12
摘要： The invention is directed to a method of preparing metal fluoride crystals that are suitable for making optical elements that can be used in below 200 nm lithographic equipment and processes. In accordance with the invention, metal fluoride particles, substantially all of which have a size of 1 mm or greater, are treated with an oxygen scavenger material just prior to being melted and used to grow a metal fluoride single crystal. In one embodiment of the invention a metal fluoride raw material is treated with an oxygen scavenger to remove oxygen containing impurities, liquefied and cooled to form a premelt material. The premelt material is then broken into particles having a range of sizes and separated by sieving or other separation methods known in the art into at least a group of particles substantially all of which have a size of 1 mm or larger and a group of particles having a size of less than 1 mm. The 1 mm and larger material is used to grow metal fluoride single crystals having improved transmission properties in the rage 120-220 nm. The less than 1 mm material can be recycled. Particles of 1 mm or greater prepared by other methods known in the art can also be used in practicing the invention.
摘要翻译：本发明涉及一种制备金属氟化物晶体的方法，所述金属氟化物晶体适于制备可用于低于200nm平版印刷设备和方法的光学元件。根据本发明，金属氟化物颗粒，其基本上全部具有1mm或更大的尺寸，在熔融之前用除氧剂材料处理并用于生长金属氟化物单晶。在本发明的一个实施方案中，用除氧剂处理金属氟化物原料以除去含氧杂质，液化并冷却以形成预熔材料。然后将预熔材料破碎成具有一定范围尺寸的颗粒，并通过本领域已知的筛分或其它分离方法分离成至少一组基本上具有1mm或更大尺寸的颗粒，并且一组颗粒具有尺寸小于1毫米。使用1mm以上的材料生长具有改善的透射性能的金属氟化物单晶，在120-220nm的范围内。少于1毫米的材料可以回收利用。通过本领域已知的其它方法制备的1mm以上的颗粒也可用于实施本发明。

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