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1. 发明授权

US07968426B1 Systems and methods for bonding semiconductor substrates to metal substrates using microwave energy 失效
标题翻译：使用微波能量将半导体衬底接合到金属衬底的系统和方法
公开(公告)号：US07968426B1
公开(公告)日：2011-06-28
申请号：US11551915
申请日：2006-10-23
申请人： Nasser K. Budraa , Boon Ng
发明人： Nasser K. Budraa , Boon Ng
IPC分类号： H01L21/30
CPC分类号： H01L21/187 , H01L24/29 , H01L24/75 , H01L24/83 , H01L2224/291 , H01L2224/29109 , H01L2224/29111 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/83101 , H01L2224/8322 , H01L2224/83805 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/14 , H01L2924/157 , H01L2924/15724 , H01L2924/15747 , H01L2924/15763 , H01L2924/01014 , H01L2924/00 , H01L2924/01004 , H01L2924/01028 , H01L2924/0103 , H01L2924/01032 , H01L2924/01049 , H01L2924/00014
摘要： Systems and methods are disclosed for bonding of substrates using microwave energy. In some embodiments, semiconductor substrates can be bonded through a thin interlayer metal to a metal substrate by using microwave energy. High intensity microwave energy is applied to the substrate assembly positioned within a microwave cavity. A process of selective heating can occur in the thin interlayer metal, resulting in melting of the thin interlayer metal to facilitate bonding of the two substrates. Some of the advantages associated with such bonding process are disclosed.
摘要翻译：公开了用于使用微波能量接合衬底的系统和方法。在一些实施例中，半导体衬底可以通过使用微波能量通过薄的夹层金属键合到金属衬底。将高强度微波能量施加到位于微波腔内的衬底组件。选择性加热的过程可以发生在薄层间金属中，导致薄层间金属的熔化，以便于两个基板的结合。公开了与这种接合方法相关的一些优点。

2. 发明授权

US08714225B2 Systems and methods for bonding using microwave energy 失效
标题翻译：使用微波能量接合的系统和方法
公开(公告)号：US08714225B2
公开(公告)日：2014-05-06
申请号：US13371384
申请日：2012-02-10
申请人： Nasser K. Budraa
发明人： Nasser K. Budraa
IPC分类号： B29C65/14
CPC分类号： H01L21/67092 , H01L21/67115 , H01L25/50 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are systems and methods for bonding wafers by use of microwave energy. Various components that facilitate relatively quick and efficient bonding provided by microwave energy are disclosed. In certain embodiments, devices and methods for applying desirable compression to the wafers can be implemented. In certain embodiments, devices and methods for providing a controlled gas environment such as vacuum can be implemented. In certain embodiments, devices and methods for maintaining the integrity of microwave mode of operation during the bonding process can be implemented. In certain embodiments, devices and methods for increasing throughput of the bonding process can be implemented.
摘要翻译：公开了通过使用微波能量来接合晶片的系统和方法。公开了通过微波能量提供的促进相对快速和高效接合的各种部件。在某些实施例中，可以实现用于对晶片施加期望压缩的装置和方法。在某些实施例中，可以实现用于提供受控气体环境例如真空的装置和方法。在某些实施例中，可以实现用于在接合过程期间维持微波操作模式的完整性的装置和方法。在某些实施例中，可以实现用于增加绑定过程的吞吐量的装置和方法。

3. 发明授权

US07985657B1 Systems and methods for bonding materials using microwave energy 失效
标题翻译：使用微波能量接合材料的系统和方法
公开(公告)号：US07985657B1
公开(公告)日：2011-07-26
申请号：US11684553
申请日：2007-03-09
申请人： Nasser K. Budraa , Boon Ng
发明人： Nasser K. Budraa , Boon Ng
IPC分类号： H01L21/30
CPC分类号： H01L21/187
摘要： Systems and methods are disclosed for bonding of semiconductor, metal, metal-ceramic or combinations of these substrates using microwave energy. In some embodiments, metal-ceramic substrates carrying semiconductor substrates can be bonded simultaneously through a thin interlayer metal to a metal substrate by using microwave energy. In some embodiments, other substrate combinations can be bonded by using microwave energy. High intensity microwave energy is applied to the substrate assembly positioned within a microwave cavity. A process of selective heating can occur in the thin interlayer metal enhanced by the presence of third microwave absorbing substrate, resulting in melting of the thin interlayer metal to facilitate bonding of the two substrates. Some of the advantages associated with such bonding process are disclosed.
摘要翻译：公开了用于使用微波能量接合半导体，金属，金属陶瓷或这些衬底的组合的系统和方法。在一些实施例中，携带半导体衬底的金属陶瓷衬底可以通过使用微波能量通过薄的夹层金属同时结合到金属衬底。在一些实施方案中，可以通过使用微波能量来结合其它底物组合。将高强度微波能量施加到位于微波腔内的衬底组件。通过存在第三微波吸收衬底而增强的薄层间金属可以发生选择性加热的过程，导致薄层间金属的熔化，以促进两个衬底的结合。公开了与这种接合方法相关的一些优点。

4. 发明申请

US20120138220A1 SYSTEMS AND METHODS FOR BONDING USING MICROWAVE ENERGY 失效
标题翻译：用微波能量联结的系统和方法
公开(公告)号：US20120138220A1
公开(公告)日：2012-06-07
申请号：US13371384
申请日：2012-02-10
申请人： Nasser K. Budraa
发明人： Nasser K. Budraa
IPC分类号： B32B37/06 , B32B37/14
CPC分类号： H01L21/67092 , H01L21/67115 , H01L25/50 , H01L2924/0002 , H01L2924/00
摘要： Disclosed are systems and methods for bonding wafers by use of microwave energy. Various components that facilitate relatively quick and efficient bonding provided by microwave energy are disclosed. In certain embodiments, devices and methods for applying desirable compression to the wafers can be implemented. In certain embodiments, devices and methods for providing a controlled gas environment such as vacuum can be implemented. In certain embodiments, devices and methods for maintaining the integrity of microwave mode of operation during the bonding process can be implemented. In certain embodiments, devices and methods for increasing throughput of the bonding process can be implemented.
摘要翻译：公开了通过使用微波能量来接合晶片的系统和方法。公开了通过微波能量提供的促进相对快速和高效接合的各种部件。在某些实施例中，可以实现用于对晶片施加期望压缩的装置和方法。在某些实施例中，可以实现用于提供受控气体环境例如真空的装置和方法。在某些实施例中，可以实现用于在接合过程期间维持微波操作模式的完整性的装置和方法。在某些实施例中，可以实现用于增加绑定过程的吞吐量的装置和方法。

5. 发明授权

US06905945B1 Microwave bonding of MEMS component 失效
标题翻译： MEMS组件的微波焊接
公开(公告)号：US06905945B1
公开(公告)日：2005-06-14
申请号：US10198656
申请日：2000-04-20
申请人： Martin B. Barmatz , John D. Mai , Henry W. Jackson , Nasser K. Budraa , William T. Pike
发明人： Martin B. Barmatz , John D. Mai , Henry W. Jackson , Nasser K. Budraa , William T. Pike
IPC分类号： B81C3/00 , H01L21/30
CPC分类号： B81C3/001
摘要： Bonding of MEMs materials is carried out using microwave. High microwave absorbing films are placed within a microwave cavity, and excited to cause selective heating in the skin of the material. This causes heating in one place more than another. Thereby minimizing the effects of the bonding microwave energy.
摘要翻译：使用微波进行MEMs材料的接合。将高微波吸收膜放置在微波腔内，并激发以在材料的皮肤中引起选择性加热。这导致加热在一个地方比另一个地方。从而使结合微波能量的效果最小化。

6. 发明授权

US06809305B2 Microwave bonding of thin film metal coated substrates 失效
公开(公告)号：US06809305B2
公开(公告)日：2004-10-26
申请号：US10064500
申请日：2002-07-22
申请人： Martin B. Barmatz , John D. Mai , Henry W. Jackson , Nasser K. Budraa , William T. Pike
发明人： Martin B. Barmatz , John D. Mai , Henry W. Jackson , Nasser K. Budraa , William T. Pike
IPC分类号： H05B664
CPC分类号： B81C1/00269 , B23K13/01 , H01L2924/0002 , H05B6/806 , Y10T428/12347 , H01L2924/00
摘要： Bonding of materials such as MEMS materials is carried out using microwaves. High microwave absorbing films are placed within a microwave cavity containing other less microwave absorbing materials, and excited to cause selective heating in the skin depth of the films. This causes heating in one place more than another. This thereby minimizes unwanted heating effects during the microwave bonding process.

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