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1. 发明授权

US09130018B2 Plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻方法和存储介质
公开(公告)号：US09130018B2
公开(公告)日：2015-09-08
申请号：US13584327
申请日：2012-08-13
申请人： Naotsugu Hoshi , Noriyuki Kobayashi
发明人： Naotsugu Hoshi , Noriyuki Kobayashi
IPC分类号： H01L21/306 , C23F1/00 , H01L21/768 , H01J37/32 , H01L21/311
CPC分类号： H01L21/76813 , H01J37/32091 , H01J37/32926 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.
摘要翻译：能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部层间绝缘膜。层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

2. 发明授权

US08404596B2 Plasma ashing method 有权
标题翻译：等离子体灰化方法
公开(公告)号：US08404596B2
公开(公告)日：2013-03-26
申请号：US13103719
申请日：2011-05-09
申请人： Shigeru Tahara , Naotsugu Hoshi
发明人： Shigeru Tahara , Naotsugu Hoshi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/67069
摘要： A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.
摘要翻译：通过使用图案化的抗蚀剂膜作为掩模，使用等离子体灰化方法从处理室中的待处理物体蚀刻低k膜的一部分后，在处理室中去除图案化的抗蚀剂膜。该方法包括将至少包含CO 2气体的反应产物除去气体供给到处理室中的第一步骤，通过施加用于等离子体产生的高频功率产生反应产物去除气体的等离子体，以及去除沉积在内部的反应产物处理室壁; 以及将灰化气体供给到处理室中的第二步骤，通过施加用于等离子体产生的高频电力产生灰化气体的等离子体，以及除去抗蚀剂膜。

3. 发明授权

US07964511B2 Plasma ashing method 有权
标题翻译：等离子体灰化方法
公开(公告)号：US07964511B2
公开(公告)日：2011-06-21
申请号：US11509591
申请日：2006-08-25
申请人： Shigeru Tahara , Naotsugu Hoshi
发明人： Shigeru Tahara , Naotsugu Hoshi
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/67069
摘要： A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.
摘要翻译：通过使用图案化的抗蚀剂膜作为掩模，使用等离子体灰化方法从处理室中的待处理物体蚀刻低k膜的一部分后，在处理室中去除图案化的抗蚀剂膜。该方法包括将至少包含CO 2气体的反应产物除去气体供给到处理室中的第一步骤，通过施加用于等离子体产生的高频功率产生反应产物去除气体的等离子体，以及去除沉积在内部的反应产物处理室壁; 以及将灰化气体供给到处理室中的第二步骤，通过施加用于等离子体产生的高频电力产生灰化气体的等离子体，以及除去抗蚀剂膜。

4. 发明申请

US20090111275A1 PLASMA ETCHING METHOD AND STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和储存介质
公开(公告)号：US20090111275A1
公开(公告)日：2009-04-30
申请号：US12254943
申请日：2008-10-21
申请人： Naotsugu HOSHI , Noriyuki Kobayashi
发明人： Naotsugu HOSHI , Noriyuki Kobayashi
IPC分类号： H01L21/3065
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76834
摘要： A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.
摘要翻译：等离子体蚀刻方法，可以防止残留物附着到通孔和沟槽的底部和侧面。由CwFx（x和w是预定的自然数）形成的层间绝缘膜和形成在基板上的金属层或含金属层同时暴露于由处理气体产生的等离子体。处理气体是包括CyFz（y和z是预定的自然数）气体和N 2气体的混合气体，并且处理气体中的N 2气体的流量高于CyFz气体的流量。

5. 发明申请

US20070059933A1 Plasma ashing method 有权
标题翻译：等离子体灰化方法
公开(公告)号：US20070059933A1
公开(公告)日：2007-03-15
申请号：US11509591
申请日：2006-08-25
申请人： Shigeru Tahara , Naotsugu Hoshi
发明人： Shigeru Tahara , Naotsugu Hoshi
IPC分类号： H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01L21/67069
摘要： A plasma ashing method is used for removing a patterned resist film in a processing chamber after etching a portion of a low-k film from an object to be processed in the processing chamber by using the patterned resist film as a mask. The method includes a first step of supplying a reaction product removal gas including at least CO2 gas into the processing chamber, generating plasma of the reaction product removal gas by applying a high frequency power for the plasma generation, and removing reaction products deposited on an inner wall of the processing chamber; and a second step of supplying an ashing gas into the processing chamber, generating plasma of the ashing gas by applying a high frequency power for the plasma generation, and removing the resist film.
摘要翻译：通过使用图案化的抗蚀剂膜作为掩模，使用等离子体灰化方法从处理室中的待处理物体蚀刻低k膜的一部分后，在处理室中去除图案化的抗蚀剂膜。该方法包括将至少包含CO 2 2气体的反应产物除去气体供给到处理室中的第一步骤，通过施加用于等离子体产生的高频功率产生反应产物去除气体的等离子体，以及去除沉积在所述处理室的内壁上的反应产物; 以及将灰化气体供给到处理室中的第二步骤，通过施加用于等离子体产生的高频电力产生灰化气体的等离子体，以及除去抗蚀剂膜。

6. 发明授权

US07799703B2 Processing method and storage medium 有权
标题翻译：加工方法和储存介质
公开(公告)号：US07799703B2
公开(公告)日：2010-09-21
申请号：US12025359
申请日：2008-02-04
申请人： Kazuhiro Kubota , Naotsugu Hoshi , Yuki Chiba , Ryuichi Asako
发明人： Kazuhiro Kubota , Naotsugu Hoshi , Yuki Chiba , Ryuichi Asako
IPC分类号： H01L21/31 , H01L21/469 , H01L21/4763
CPC分类号： H01L21/76802 , H01L21/3105 , H01L21/31058 , H01L21/76814 , H01L21/76826 , H01L21/76835
摘要： A processing method includes a gas having a Si—CH3 bond supplied into a processing chamber after a target substrate to be processed is loaded into the processing chamber; and a silylation process performed on the target substrate. The internal pressure of the chamber by the supply of the gas having the Si—CH3 bond and the gas supply time are set to be within ranges where the silylation process can be performed while the internal pressure of the chamber is decreased to reach an eligible pressure level where the wafer can be unloaded after the internal pressure of the chamber is increased up to a preset pressure by the supply of the gas.
摘要翻译：处理方法包括将待处理的目标基板装载到处理室中之后，将具有Si-CH3键的气体供应到处理室中; 和在靶基质上进行的甲硅烷基化处理。通过供给具有Si-CH3键的气体和气体供给时间的室的内部压力被设定在可以进行甲硅烷化处理的范围内，同时室的内部压力降低到达到合格压力在通过气体的供应将腔室的内部压力增加到预定压力之后可以卸载晶片的水平面。

7. 发明授权

US09384999B2 Plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻方法和存储介质
公开(公告)号：US09384999B2
公开(公告)日：2016-07-05
申请号：US12254943
申请日：2008-10-21
申请人： Naotsugu Hoshi , Noriyuki Kobayashi
发明人： Naotsugu Hoshi , Noriyuki Kobayashi
IPC分类号： H01L21/3065 , H01L21/311 , H01J37/32 , H01L21/768
CPC分类号： H01L21/31138 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/76802 , H01L21/76834
摘要： A plasma etching method that can prevent residues from becoming attached to bottoms and sides of via holes and trenches. An interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a metallic layer or a metal-containing layer formed on a substrate are exposed at the same time to plasma generated from a process gas. The process gas is a mixed gas including CyFz (y and z are predetermined natural numbers) gas and N2 gas, and the flow rate of the N2 gas in the process gas is higher than the flow rate of the CyFz gas.
摘要翻译：等离子体蚀刻方法，可以防止残留物附着到通孔和沟槽的底部和侧面。由CwFx（x和w是预定的自然数）形成的层间绝缘膜和形成在基板上的金属层或含金属层同时暴露于由处理气体产生的等离子体。处理气体是包括CyFz（y和z是预定的自然数）气体和N 2气体的混合气体，并且处理气体中的N 2气体的流量高于CyFz气体的流量。

8. 发明授权

US08252694B2 Plasma etching method and storage medium 有权
标题翻译：等离子体蚀刻方法和存储介质
公开(公告)号：US08252694B2
公开(公告)日：2012-08-28
申请号：US12273209
申请日：2008-11-18
申请人： Naotsugu Hoshi , Noriyuki Kobayashi
发明人： Naotsugu Hoshi , Noriyuki Kobayashi
IPC分类号： H01L21/302
CPC分类号： H01L21/76813 , H01J37/32091 , H01J37/32926 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.
摘要翻译：能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部层间绝缘膜。层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

9. 发明申请

US20090137127A1 PLASMA ETCHING METHOD AND STORAGE MEDIUM 有权
标题翻译：等离子体蚀刻方法和储存介质
公开(公告)号：US20090137127A1
公开(公告)日：2009-05-28
申请号：US12273209
申请日：2008-11-18
申请人： Naotsugu HOSHI , Noriyuki Kobayashi
发明人： Naotsugu HOSHI , Noriyuki Kobayashi
IPC分类号： H01L21/467 , G06F19/00
CPC分类号： H01L21/76813 , H01J37/32091 , H01J37/32926 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.
摘要翻译：能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部层间绝缘膜。层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

10. 发明申请

US20120309203A1 PLASMA ETCHING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体蚀刻方法和储存介质
公开(公告)号：US20120309203A1
公开(公告)日：2012-12-06
申请号：US13584327
申请日：2012-08-13
申请人： Naotsugu HOSHI , Noriyuki Kobayashi
发明人： Naotsugu HOSHI , Noriyuki Kobayashi
IPC分类号： H01L21/3065
CPC分类号： H01L21/76813 , H01J37/32091 , H01J37/32926 , H01L21/31116 , H01L21/31138 , H01L21/76807 , H01L21/76814
摘要： A plasma etching method that can increase the selection ratio of a stop layer to an interlayer insulation film. The plasma etching method is carried out on a substrate that has the interlayer insulation film formed of CwFx (x and w are predetermined natural numbers) and a stop layer that stops etching and is exposed at the bottom of a hole or a trench formed in the interlayer insulation film. The interlayer insulation film and the stop layer are exposed at the same time to plasma generated from CyFz (y and z are predetermined natural numbers) gas and hydrogen-containing gas.
摘要翻译：能够提高阻挡层与层间绝缘膜的选择比的等离子体蚀刻方法。等离子体蚀刻方法是在具有由CwFx（x和w是预定的自然数）形成的层间绝缘膜的基板上进行的，停止层停止蚀刻并露出在形成于其中的孔或沟槽的底部层间绝缘膜。层间绝缘膜和停止层同时暴露于由CyFz（y和z是预定的自然数）产生的等离子体气体和含氢气体。

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