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1. 发明申请

US20090001896A1 Light-Emitting Device and Method of Manufacturing the Same, and Method of Operating Manufacturing Apparatus 有权
标题翻译：发光装置及其制造方法以及操作制造装置的方法
公开(公告)号：US20090001896A1
公开(公告)日：2009-01-01
申请号：US12055432
申请日：2008-03-26
申请人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
发明人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
IPC分类号： G09G3/30
CPC分类号： H01L27/3244 , H01L51/001 , H01L51/0037 , H01L51/5203 , H01L51/56 , H01L2251/5315
摘要： The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed blow the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, little damage was observed on the EL layer, but significant damages were found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.
摘要翻译：本发明人已经预期使用电子枪沉积作为在EL层上形成金属层的方法是没有问题的，因为TFT被置于有源矩阵发光器件中吹扫ET层。然而，由于TFT对电离蒸发颗粒非常敏感，所以由电子枪产生的二次电子，反射电子等在EL层上观察到很小的损伤，但是当电子枪使用沉积。本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中形成有机化合物层和金属层（阴极或阳极）通过对TFT具有最小影响的电阻加热。

2. 发明申请

US20120175620A1 Light-Emitting Device and Method of Manufacturing the Same, and Method of Operating Manufacturing Apparatus 有权
标题翻译：发光装置及其制造方法以及操作制造装置的方法
公开(公告)号：US20120175620A1
公开(公告)日：2012-07-12
申请号：US13420689
申请日：2012-03-15
申请人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
发明人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
IPC分类号： H01L51/52
CPC分类号： H01L27/3244 , H01L51/001 , H01L51/0037 , H01L51/5203 , H01L51/56 , H01L2251/5315
摘要： The inventors have anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on an EL layer of an active matrix light-emitting device because the TFT of the active matrix light-emitting device is disposed below the EL layer. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, while little damage is observed on the EL layer, significant damage is found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.
摘要翻译：本发明人已经预期，在有源矩阵发光器件的EL层上作为形成金属层的方法而使用电子枪沉积是没有问题的，因为有源矩阵发光器件的TFT设置在EL 层。然而，由于TFT对于电子枪产生的电离蒸发颗粒，二次电子，反射电子等非常敏感，而在EL层上观察到很小的损伤，因此当电子枪使用沉积。本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中形成有机化合物层和金属层（阴极或阳极）通过对TFT具有最小影响的电阻加热。

3. 发明授权

US5642062A Comparator circuit operating on variable current 失效
标题翻译：比较器电路工作在可变电流
公开(公告)号：US5642062A
公开(公告)日：1997-06-24
申请号：US521851
申请日：1995-08-31
申请人： Naomi Kawakami
发明人： Naomi Kawakami
IPC分类号： H03F3/45 , H03F1/02 , H03K5/24
CPC分类号： H03K5/2418 , H03F1/0261
摘要： A comparator circuit includes a differential amplifier circuit (5, 6, and 7) which receives a first input voltage and a second input voltage, and outputs a comparison result signal by comparing the first and second input voltages, a current circuit (8) which supplies a driving current to activate the differential amplifier circuit, and a current control circuit (2) which is connected to the differential amplifier circuit and the current circuit. The current control circuit is deactivated when the first input voltage is lower than the second input voltage, and is activated when the first input voltage is higher than the second input voltage to reduce the driving current supplied.
摘要翻译：比较器电路包括接收第一输入电压和第二输入电压的差分放大电路（5,6和7），并通过比较第一和第二输入电压来输出比较结果信号;电流电路（8），其提供驱动电流以激活差分放大器电路，以及电流控制电路（2），其连接到差分放大器电路和电流电路。当第一输入电压低于第二输入电压时，电流控制电路被去激活，并且当第一输入电压高于第二输入电压时被激活，以减小提供的驱动电流。

4. 发明授权

US07378126B2 Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus 有权
标题翻译：发光装置及其制造方法以及操作制造装置的方法
公开(公告)号：US07378126B2
公开(公告)日：2008-05-27
申请号：US10370106
申请日：2003-02-21
申请人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
发明人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
IPC分类号： B05D5/12 , C23C14/14 , C23C16/00
CPC分类号： H01L27/3244 , H01L51/001 , H01L51/0037 , H01L51/5203 , H01L51/56 , H01L2251/5315
摘要： The inventors has been anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on the EL layer because the TFT is disposed below the ET layer in the active matrix light-emitting device. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, little damage was observed on the EL layer, but significant damages were found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.
摘要翻译：本发明人已经预期使用电子枪沉积作为在EL层上形成金属层的方法没有问题，因为TFT设置在有源矩阵发光器件中的ET层下方。然而，由于TFT对电离蒸发颗粒非常敏感，所以由电子枪产生的二次电子，反射电子等在EL层上观察到很小的损伤，但是当电子枪使用沉积。本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中有机化合物层和金属层（阴极或阳极）由对TFT影响最小的电阻加热装置。

5. 发明授权

US08536784B2 Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus 有权
标题翻译：发光装置及其制造方法以及操作制造装置的方法
公开(公告)号：US08536784B2
公开(公告)日：2013-09-17
申请号：US13420689
申请日：2012-03-15
申请人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
发明人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
IPC分类号： H01L51/52
CPC分类号： H01L27/3244 , H01L51/001 , H01L51/0037 , H01L51/5203 , H01L51/56 , H01L2251/5315
摘要： The inventors have anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on an EL layer of an active matrix light-emitting device because the TFT of the active matrix light-emitting device is disposed below the EL layer. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, while little damage is observed on the EL layer, significant damage is found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.
摘要翻译：本发明人已经预期，在有源矩阵发光器件的EL层上作为形成金属层的方法而使用电子枪沉积是没有问题的，因为有源矩阵发光器件的TFT设置在EL 层。然而，由于TFT对于电子枪产生的电离蒸发颗粒，二次电子，反射电子等非常敏感，而在EL层上观察到很小的损伤，因此当电子枪使用沉积。本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中形成有机化合物层和金属层（阴极或阳极）通过对TFT具有最小影响的电阻加热。

6. 发明授权

US08138670B2 Light-emitting device and method of manufacturing the same, and method of operating manufacturing apparatus 有权
标题翻译：发光装置及其制造方法以及操作制造装置的方法
公开(公告)号：US08138670B2
公开(公告)日：2012-03-20
申请号：US12055432
申请日：2008-03-26
申请人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
发明人： Shunpei Yamazaki , Masakazu Murakami , Naomi Kawakami , Hisashi Ohtani
IPC分类号： H01J1/62
CPC分类号： H01L27/3244 , H01L51/001 , H01L51/0037 , H01L51/5203 , H01L51/56 , H01L2251/5315
摘要： The inventors have anticipated that there is no problem in employing electron gun deposition as a method of forming a metallic layer on an EL layer of an active matrix light-emitting device because the TFT of the active matrix light-emitting device is disposed below the EL layer. However, since the TFT is extremely sensitive to ionized evaporated particles, the secondary electron, the reflecting electron, and so on generated by the electron gun, while little damage is observed on the EL layer, significant damage is found on the TFT when electron gun deposition is employed. The invention provides an active matrix light-emitting device having superior TFT characteristics (ON current, OFF to current, Vth, S-value, and so on), in which an organic compound layer and a metallic layer (cathode or anode) are formed by means of resistive heating having least influence to the TFT.
摘要翻译：本发明人已经预期，在有源矩阵发光器件的EL层上作为形成金属层的方法而使用电子枪沉积是没有问题的，因为有源矩阵发光器件的TFT设置在EL 层。然而，由于TFT对于电子枪产生的电离蒸发颗粒，二次电子，反射电子等非常敏感，而在EL层上观察到很小的损伤，因此当电子枪使用沉积。本发明提供一种具有优异的TFT特性（导通电流，截止电流，Vth，S值等）的有源矩阵发光器件，其中形成有机化合物层和金属层（阴极或阳极）通过对TFT具有最小影响的电阻加热。

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