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    • 4. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT
    • 氮化物半导体发光元件
    • US20130026487A1
    • 2013-01-31
    • US13636590
    • 2011-03-23
    • Naoki Musashi
    • Naoki Musashi
    • H01L33/02H01L33/62
    • H01L33/42H01L33/007H01L33/0075H01L33/0095H01L33/32H01L2933/0016
    • An object of the present invention is to provide a nitride semiconductor light emitting element having a novel transparent electrode. The nitride semiconductor light emitting element has the transparent electrode on a p-type nitride semiconductor layer, wherein the p-type nitride semiconductor layer and the transparent electrode can be in good ohmic contact to each other and wherein the variability of the forward voltage (Vf) within the wafer can be reduced.The present invention is a nitride semiconductor light emitting element including: an n-side nitride semiconductor layer; a p-side nitride semiconductor layer; and a transparent electrode formed on the p-side nitride semiconductor layer, wherein the transparent electrode is made of indium oxide containing Ge and Si.
    • 本发明的目的是提供一种具有新型透明电极的氮化物半导体发光元件。 氮化物半导体发光元件在p型氮化物半导体层上具有透明电极,其中p型氮化物半导体层和透明电极可以彼此良好的欧姆接触,并且其中正向电压(Vf )可以减少。 本发明是一种氮化物半导体发光元件,包括:n侧氮化物半导体层; p侧氮化物半导体层; 以及形成在p侧氮化物半导体层上的透明电极,其中透明电极由含有Ge和Si的氧化铟制成。