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1. 发明授权

US09398732B2 Power supplying means having shielding means for feeding line and substrate processing apparatus including the same 有权
标题翻译：电源装置具有用于馈线的屏蔽装置和包括该屏蔽装置的基板处理装置
公开(公告)号：US09398732B2
公开(公告)日：2016-07-19
申请号：US13174529
申请日：2011-06-30
申请人： Jae-Chul Do , Bu-Il Jeon , Myung-Gon Song , Jung-Rak Lee
发明人： Jae-Chul Do , Bu-Il Jeon , Myung-Gon Song , Jung-Rak Lee
IPC分类号： C23C16/50 , C23C16/505 , H01J37/32 , H05K9/00
CPC分类号： H05K9/00 , C23C16/50 , C23C16/505 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32568 , H01J37/32577
摘要： A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.
摘要翻译：基板处理装置包括：处理室，其包括室盖和室主体，用于在其中提供反应空间; 处理室中的源电极; 用于向源电极提供RF功率的射频（RF）电源; 连接源电极和RF电源的馈电线; 以及包围供电线以阻挡电场的屏蔽部。

2. 发明授权

US08968514B2 Gas distributing device and substrate processing apparatus including the same 有权
标题翻译：气体分配装置和包括该气体分配装置的基板处理装置
公开(公告)号：US08968514B2
公开(公告)日：2015-03-03
申请号：US13167287
申请日：2011-06-23
申请人： Jae-Chul Do , Bu-Il Jeon , Myung-Gon Song , Jung-Rak Lee
发明人： Jae-Chul Do , Bu-Il Jeon , Myung-Gon Song , Jung-Rak Lee
IPC分类号： C23C16/509 , C23C16/505 , C23C16/50 , C23F1/00 , H01L21/306 , C23C16/455 , H01J37/32 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/509 , H01J37/32091 , H01J37/3244
摘要： A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.
摘要翻译：一种用于基板处理装置的气体分配装置，包括具有第一侧表面的多个等离子体源电极; 多个等离子体接地电极，其具有与所述第一侧面对置的第二侧面，所述多个等离子体接地电极与所述多个等离子体源电极交替配置; 以及设置在每个等离子体源电极处并包括第一空间的第一气体提供部分，与第一空间连通的多个第一通孔，用于在多个等离子体源极之一之间提供第一处理气体，的多个等离子体接地电极，以及在第一侧表面处的第一排出部。

3. 发明申请

US20080128088A1 ETCHING APPARATUS FOR EDGES OF SUBSTRATE 审中-公开
标题翻译：蚀刻基板边缘的装置
公开(公告)号：US20080128088A1
公开(公告)日：2008-06-05
申请号：US11927182
申请日：2007-10-29
申请人： Dae-Sik JUNN , Duck-Ho KIM , Myung-Gon SONG , Jeong-Beom LEE , Kyoung-Jin LIM , Sung-Ho CHA
发明人： Dae-Sik JUNN , Duck-Ho KIM , Myung-Gon SONG , Jeong-Beom LEE , Kyoung-Jin LIM , Sung-Ho CHA
IPC分类号： C23F1/00
CPC分类号： H01L21/67069 , H01J37/32623 , H01J2237/334
摘要： An etching apparatus comprises a chamber; a substrate supporter in the chamber; a substrate disposed on the substrate and having one of a notch zone and a flat zone, the substrate having a rim of a circular shape except in the one of the notch zone and the flat zone, wherein the rim of the substrate has a dented shape in the notch zone and a chord shape in the flat zone; a substrate-screening unit having a substantially same shape as the substrate and disposed over the substrate, the substrate-screening unit having a portion corresponding to the one of the notch zone and the flat zone, wherein the substrate-screening unit has a first diameter smaller than or equal to a second diameter of the substrate; a gas injection means supplying gases onto a periphery of the substrate; and a power supply unit supplying an RF (radio frequency) power into the chamber.
摘要翻译：蚀刻装置包括：腔室; 腔室中的衬底支撑件; 衬底，其设置在所述衬底上并且具有切口区域和平坦区域中的一个，所述衬底具有除所述凹口区域和所述平坦区域之外的圆形边缘，其中所述衬底的边缘具有凹陷形状在切口区域中，在平坦区域中具有弦形; 衬底筛选单元，其具有与衬底基本相同的形状并且设置在衬底上，衬底筛选单元具有对应于切口区域和平坦区域中的一个的部分，其中衬底筛选单元具有第一直径小于或等于所述基板的第二直径; 气体喷射装置，其将气体供应到所述基板的周边; 以及向室提供RF（射频）功率的电源单元。

4. 发明申请

US20120000609A1 POWER SUPPLYING MEANS HAVING SHIELDING MEANS FOR FEEDING LINE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 有权
标题翻译：具有进给线的屏蔽装置的电源装置和包括它们的基板处理装置
公开(公告)号：US20120000609A1
公开(公告)日：2012-01-05
申请号：US13174529
申请日：2011-06-30
申请人： Jae-Chul DO , Bu-Il JEON , Myung-Gon SONG , Jung-Rak LEE
发明人： Jae-Chul DO , Bu-Il JEON , Myung-Gon SONG , Jung-Rak LEE
IPC分类号： H01L21/3065 , H02J3/00 , C23C16/509
CPC分类号： H05K9/00 , C23C16/50 , C23C16/505 , H01J37/32091 , H01J37/3244 , H01J37/32532 , H01J37/32568 , H01J37/32577
摘要： A substrate processing apparatus includes: a process chamber including a chamber lid and a chamber body to provide a reaction space therein; a source electrode in the process chamber; a radio frequency (RF) power source for supplying an RF power to the source electrode; a feeding line connecting the source electrode and the RF power source; and a shielding part wrapping the feeding line to block an electric field.
摘要翻译：基板处理装置包括：处理室，其包括室盖和室主体，用于在其中提供反应空间; 处理室中的源电极; 用于向源电极提供RF功率的射频（RF）电源; 连接源电极和RF电源的馈电线; 以及包围供电线以阻挡电场的屏蔽部。

5. 发明申请

US20110315320A1 GAS DISTRIBUTING DEVICE AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 有权
标题翻译：气体分配装置和基板加工装置，包括它们
公开(公告)号：US20110315320A1
公开(公告)日：2011-12-29
申请号：US13167287
申请日：2011-06-23
申请人： JAE-CHUL DO , BU-IL JEON , MYUNG-GON SONG , JUNG-RAK LEE
发明人： JAE-CHUL DO , BU-IL JEON , MYUNG-GON SONG , JUNG-RAK LEE
IPC分类号： H01L21/3065 , C23C16/50
CPC分类号： C23C16/45565 , C23C16/45574 , C23C16/509 , H01J37/32091 , H01J37/3244
摘要： A gas distribution device for a substrate treating apparatus includes a plurality of plasma source electrodes having a first side surface; a plurality of plasma ground electrodes having a second side surface facing the first side surface, the plurality of plasma ground electrodes being alternately arranged with the plurality of plasma source electrodes; and a first gas providing part disposed at each plasma source electrode and including a first space, a plurality of first through-holes in communication with the first space for providing a first process gas between one of the plurality of plasma source electrodes and a corresponding ones of the plurality of plasma ground electrodes, and a first discharging portion at the first side surface.
摘要翻译：一种用于基板处理装置的气体分配装置，包括具有第一侧表面的多个等离子体源电极; 多个等离子体接地电极，其具有与所述第一侧面对置的第二侧面，所述多个等离子体接地电极与所述多个等离子体源电极交替配置; 以及设置在每个等离子体源电极处并包括第一空间的第一气体提供部分，与第一空间连通的多个第一通孔，用于在多个等离子体源极之一之间提供第一处理气体，的多个等离子体接地电极，以及在第一侧表面处的第一排出部。

6. 发明申请

US20110120375A1 APPARATUS FOR PROCESSING SUBSTRATE 审中-公开
标题翻译：加工基材的装置
公开(公告)号：US20110120375A1
公开(公告)日：2011-05-26
申请号：US12950928
申请日：2010-11-19
申请人： Myung-Gon SONG , Jung-Rak Lee , Jae-Chul Do , Bu-Il Jeon
发明人： Myung-Gon SONG , Jung-Rak Lee , Jae-Chul Do , Bu-Il Jeon
IPC分类号： C23C16/453
CPC分类号： H01J37/32082 , H01J37/3244 , H01J37/32449 , H01J37/32541
摘要： An apparatus for processing a substrate includes: a process chamber providing a reaction space by a combination of a lid and a body; a susceptor in the reaction space and having a substrate thereon; a plurality of plasma source electrodes over the reaction space; a plurality of first lower protruding portions under the lid; and a plurality of first gas injecting means corresponding to the plurality of plasma source electrodes and a plurality of second gas injecting means alternately disposed with the plurality of first gas injecting means.
摘要翻译：一种用于处理衬底的设备包括：处理室，其通过盖和主体的组合提供反应空间; 反应空间中的基座，其上具有基板; 在反应空间上的多个等离子体源电极; 盖下方的多个第一下突出部; 以及与多个等离子体源电极对应的多个第一气体注入装置和与多个第一气体注入装置交替设置的多个第二气体注入装置。

7. 发明申请

US20110214812A1 GAS DISTRIBUTING MEANS AND SUBSTRATE PROCESSING APPARATUS INCLUDING THE SAME 审中-公开
标题翻译：气体分配装置和基板加工装置，包括它们
公开(公告)号：US20110214812A1
公开(公告)日：2011-09-08
申请号：US13043055
申请日：2011-03-08
申请人： MYUNG-GON SONG , JUNG-RAK LEE , JAE-CHUL DO , BU-IL JEON , SEONG-DAE CHOI
发明人： MYUNG-GON SONG , JUNG-RAK LEE , JAE-CHUL DO , BU-IL JEON , SEONG-DAE CHOI
IPC分类号： C23F1/08 , C23C16/455 , C23C16/458 , C23C16/50 , B67D7/06 , B23P17/00
CPC分类号： B23P17/00 , B67D7/06 , C23C16/455 , C23C16/458 , C23C16/50 , C23F1/08 , Y10T29/49401
摘要： A substrate processing apparatus includes a process chamber having a chamber lid and a chamber body to provide a reaction space and a gas distributing means including a plate and an injection part in the process chamber. The injection part includes a plurality of through holes in the plate and a discharge portion capable of being in fluid communication with the plurality of through holes. The discharge portion has a matrix shape and provides a space where a plasma is discharged. The apparatus additionally includes a susceptor in the process chamber. The susceptor faces the gas distributing means.
摘要翻译：基板处理装置包括具有室盖和室主体以提供反应空间的处理室和在处理室中包括板和注入部分的气体分配装置。注射部分包括板中的多个通孔和能够与多个通孔流体连通的排出部分。放电部分具有矩阵形状并且提供等离子体放电的空间。该装置还包括处理室中的基座。基座面对气体分配装置。

8. 发明申请

US20080061034A1 ETCHING APPARATUS AND ETCHING METHOD USING THE SAME 审中-公开
标题翻译：蚀刻装置和使用它的蚀刻方法
公开(公告)号：US20080061034A1
公开(公告)日：2008-03-13
申请号：US11852012
申请日：2007-09-07
申请人： Dae-Sik JUNN , Jeong-Beom LEE , Sung-Ho CHA , Sung-Min NA , Myung-Gon SONG , Duck-Ho KIM , Kyoung-Jin LIM
发明人： Dae-Sik JUNN , Jeong-Beom LEE , Sung-Ho CHA , Sung-Min NA , Myung-Gon SONG , Duck-Ho KIM , Kyoung-Jin LIM
IPC分类号： H01L21/3065
CPC分类号： H01J37/3299 , H01J37/32091 , H01J37/32743 , H01J37/32752 , H01J37/32935 , H01J2237/334 , H01L21/67253 , H01L21/67259 , H01L21/681 , H01L21/68785
摘要： An etching apparatus includes a chamber, a substrate support in the chamber, a substrate-screening unit over the substrate support, wherein a diameter of the substrate-screening unit is smaller than as or equals to a substrate, a gas injection means injecting gases onto a periphery of the substrate, a power supply unit providing an RF (radio frequency) power into the chamber, and a plurality of sensors sensing intervals between the substrate support and the substrate-screening unit.
摘要翻译：蚀刻装置包括腔室，腔室中的衬底支撑件，衬底支撑件上方的衬底筛选单元，其中衬底筛选单元的直径小于或等于衬底;气体注入装置，将气体注入到所述基板的周边，向所述室提供RF（射频）功率的电源单元以及检测所述基板支撑件和所述基板检测单元之间的间隔的多个传感器。

9. 发明申请

US20060151712A1 Focusing apparatus and lithography system using the same 有权
标题翻译：聚焦设备和使用它的光刻系统
公开(公告)号：US20060151712A1
公开(公告)日：2006-07-13
申请号：US11311282
申请日：2005-12-20
申请人： Chang-Wook Moon , Dong-Soo Kim , Myung-Gon Song , Seung-Woon Lee , Yun-Sang Oh
发明人： Chang-Wook Moon , Dong-Soo Kim , Myung-Gon Song , Seung-Woon Lee , Yun-Sang Oh
IPC分类号： H01J1/50
CPC分类号： H01J37/067 , B82Y10/00 , B82Y40/00 , H01J3/22 , H01J37/145 , H01J37/304 , H01J37/3174 , H01J2237/31776 , H01J2237/31777 , H01J2237/31781
摘要： A focusing apparatus and a lithography system using the same capable of adjusting a uniformity of an electromagnetic field by moving a portion of a magnetic field generator. The focusing apparatus may control a path of an electron beam generated from an electron-beam emitter of the lithography system. In the focusing apparatus, a uniformity of the magnetic field in the vacuum chamber may be adjusted through movement of the portion of the magnetic field generator with respect to the vacuum chamber.
摘要翻译：使用该方法的聚焦装置和光刻系统能够通过移动磁场发生器的一部分来调节电磁场的均匀性。聚焦装置可以控制从光刻系统的电子束发射器产生的电子束的路径。在聚焦装置中，可以通过磁场发生器的一部分相对于真空室的移动来调节真空室中的磁场的均匀性。

10. 发明申请

US20110036499A1 SUBSTRATE TREATMENT APPARATUS 审中-公开
标题翻译：基板处理设备
公开(公告)号：US20110036499A1
公开(公告)日：2011-02-17
申请号：US12702188
申请日：2010-02-08
申请人： Jung-Rak LEE , Myung-Gon SONG , Jae-Chul DO , Bu-Il JEON
发明人： Jung-Rak LEE , Myung-Gon SONG , Jae-Chul DO , Bu-Il JEON
IPC分类号： C23C16/513 , H01L21/3065
CPC分类号： C23C16/50 , C23C16/45574 , H01J37/321 , H01J37/32449
摘要： A substrate treatment apparatus includes a process chamber providing a reaction region and including a body and a lid, the lid having a plurality of openings, a plurality of insulating plates sealing the plurality of openings, respectively, a plurality of antennas over the plurality of insulating plates, respectively, a gas injection unit over the lid and the plurality of insulating plates, and a substrate holding unit in the reaction region, wherein a substrate is disposed on the substrate holding unit.
摘要翻译：基板处理装置包括：处理室，其设置反应区域并且包括主体和盖子，所述盖子具有多个开口;多个绝缘板，分别密封所述多个开口;多个绝缘体，多个绝缘体分别在盖和多个绝缘板上的气体注入单元和反应区中的基板保持单元，其中基板设置在基板保持单元上。

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