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1. 发明授权

US5530485A Channel equalizer for a high definition television 失效
标题翻译：用于高分辨率电视的频道均衡器
公开(公告)号：US5530485A
公开(公告)日：1996-06-25
申请号：US371709
申请日：1995-01-13
申请人： Myung S. Kim , Hee B. Park
发明人： Myung S. Kim , Hee B. Park
IPC分类号： H04N7/24 , H04N5/21
CPC分类号： H04N5/211
摘要： A channel equalizer for a high definition television that enhances the convergent speed of the channel equalizer by renewing first a filter coefficient of a near ghost image and then renewing a filter coefficient of a far ghost image, after distinguishing the filter coefficient corresponding to the near ghost image from the filter coefficient corresponding to the far ghost image. The equalizer comprises a finite impulse response filter for performing channel equalization on an input signal input from outside of the channel equalizer, the finite impulse response filter uses a previous filter coefficient corresponding to a near ghost image and a previous filter coefficient corresponding to a far ghost image to determine an output signal, and a filter coefficient renewal part for sequentially computing a present filter coefficient corresponding to a near ghost and a present filter coefficient corresponding to a far ghost using the output signal from the finite impulse response filter and a training sequence signal input from outside of the channel equalizer and for outputting the previous filter coefficient corresponding to the near ghost image and the previous filter coefficient corresponding to the far ghost image.
摘要翻译：一种用于高分辨率电视的信道均衡器，其通过在区分近似重影对应的滤波器系数之后，首先更新近重影图像的滤波器系数，然后更新远重影图像的滤波器系数，从而增强信道均衡器的收敛速度来自与远重影像对应的滤镜系数的图像。均衡器包括有限脉冲响应滤波器，用于对从信道均衡器外部输入的输入信号进行信道均衡，有限脉冲响应滤波器使用对应于近重影图像的先前滤波器系数和对应于远重影的先前滤波器系数图像以确定输出信号;以及滤波器系数更新部件，用于使用来自有限脉冲响应滤波器的输出信号和训练序列信号来顺序地计算对应于近重影的当前滤波器系数和对应于远重影的当前滤波器系数从信道均衡器的外部输入并输出对应于近重影像的先前滤波器系数和对应于远重影图像的先前滤波器系数。

2. 发明授权

US5004573A Fabrication method for high voltage zinc oxide varistor 失效
标题翻译：高压氧化锌压敏电阻的制作方法
公开(公告)号：US5004573A
公开(公告)日：1991-04-02
申请号：US430463
申请日：1989-11-02
申请人： Myung H. Oh , Kyung J. Lee , In J. Chung , Nam Y. Lee , Myung S. Kim
发明人： Myung H. Oh , Kyung J. Lee , In J. Chung , Nam Y. Lee , Myung S. Kim
IPC分类号： C04B35/453 , C04B41/50 , H01C7/112
CPC分类号： C04B35/453 , C04B41/5025 , H01C7/112
摘要： A method of producing a zinc oxide varistor for high voltage which is a voltage-current non-linear type of resistor including zinc oxide as the major ingredient and bismuth oxide or manganese dioxide as additives for use with a circuit protector and gapless arrester. The method of the invention includes sintering a zinc oxide composition lacking bismuth oxide at 1200.degree.-1350.degree. C. under conditions and for a period of time effective to form a primary sintered body, heat-treating a primary sintered body coated with an amount of metal oxide paste containing mostly bismuth oxide at a temperature of 1000.degree.-1200.degree. C. for a period of time effective to diffuse the metal oxide paste to the grain boundaries of the zinc oxide grains.
摘要翻译：一种制造用于高电压的氧化锌变阻器的方法，其是以氧化锌为主要成分的电压 - 非线性型电阻器和氧化铋或二氧化锰作为用于电路保护器和无间隙避雷器的添加剂。本发明的方法包括在有条件的条件下烧结在1200-130℃下不含氧化铋的氧化锌组合物，形成初级烧结体，热处理一次烧结体，主要是在1000-112℃的温度下主要含有氧化铋的金属氧化物糊料，使其有效地将金属氧化物糊料扩散到氧化锌晶粒的晶界。

3. 发明授权

US4874712A Fabrication method of bipolar transistor 失效
标题翻译：双极晶体管的制造方法
公开(公告)号：US4874712A
公开(公告)日：1989-10-17
申请号：US249401
申请日：1988-09-26
申请人： Myung S. Kim , Hyun S. Kang , Soon K. Lim , Hee K. Park
发明人： Myung S. Kim , Hyun S. Kang , Soon K. Lim , Hee K. Park
IPC分类号： H01L29/73 , H01L21/266 , H01L21/331 , H01L29/732
CPC分类号： H01L29/66272 , H01L21/266 , Y10S148/01
摘要： Present invention relates to the fabrication method of the bipolar transistor.With this method the emitter of high-concentrated n-type is contacted closely to the extrinsic base of high-concentrated p-type.This structure is obtained by making the emitter of the bipolar transistor be self- aligned by the side wall under-cut of the nitride layer using double layers of the low temperature oxide and the nitride layer.
摘要翻译：本发明涉及双极晶体管的制造方法。采用这种方法，高浓度n型发射极与高浓度p型的外在基极紧密接触。通过使用双层低温氧化物和氮化物层，通过使氮化物层的侧壁被切割来使双极晶体管的发射极自对准，从而获得这种结构。

4. 发明授权

US4205493A Portable chamfering grinding device 失效
标题翻译：便携式倒角磨削装置
公开(公告)号：US4205493A
公开(公告)日：1980-06-03
申请号：US886544
申请日：1978-03-14
申请人： Myung S. Kim
发明人： Myung S. Kim
IPC分类号： B24B9/00 , B24D7/04 , B24D7/18 , B24B23/02 , B23B5/16
CPC分类号： B24D7/18 , Y10T408/899 , Y10T408/909
摘要： A portable chamfering grinding device for chamfering the end of a metal tube comprising an abrasive wheel and a portable pneumatic motor capable of rotating the wheel at greater than 10,000 r.p.m., the wheel including a diverging frustoconical portion having an inner grinding surface at an angle of about 37.5.degree. to the axis of the wheel for receiving and grinding the end of the metal tube. The inner grinding surface has eight raised, substantially trapezoidal grinding portions thereof to provide cutting edges and reduce shaking and slipping during grinding of the metal tube end.
摘要翻译：一种便携式倒角磨削装置，用于倒角金属管的端部，其包括砂轮和便携式气动马达，其能够以大于10,000rpm转动所述车轮，所述车轮包括发散的截头圆锥形部分，所述锥形截头圆锥形部分具有围绕 37.5°与车轮的轴线接触并研磨金属管的端部。内部研磨表面具有八个凸起的大致梯形的研磨部分，以在金属管端的研磨期间提供切割边缘并减少振动和滑动。

5. 发明授权

US5475444A Channel equalizer for a HDTV using a composite filter 失效
标题翻译：使用复合滤波器的HDTV通道均衡器
公开(公告)号：US5475444A
公开(公告)日：1995-12-12
申请号：US345823
申请日：1994-11-21
申请人： Myung S. Kim
发明人： Myung S. Kim
IPC分类号： H04N7/32 , H04L25/03 , H04N5/21 , H04N5/44 , H04N5/213
CPC分类号： H04N5/4401 , H04L25/03057 , H04N5/211 , H04L2025/03382 , H04L2025/03484 , H04L2025/03636 , H04L25/0224 , Y10S348/914
摘要： A channel equalization system of a VSB transmission system for a HDTV which can correct phase errors by using composite filters as well as by using general data even in a period having no training sequence. The channel equalizer for a HDTV includes, a composite filter part for making the input signal applied from outside produced as a I signal and a Q signal, filtering the I signal and the Q signal according to composite filter coefficients, and transmitting the filtered I and Q signals as first and second output signals. A composite filter restoring part for calculating an error for the training sequence and an error for the general data using a synchronization signal received from outside of the channel equalizer, the first and second output signals, and calculating real composite filter coefficients and imaginary composite filter coefficients based on the errors for the I signal and the Q signal produced at the composite filter part and training sequence and the error for general data and transmitting the calculated errors to the composite filter part.
摘要翻译：一种用于HDTV的VSB传输系统的信道均衡系统，其可以通过使用复合滤波器以及甚至在没有训练序列的时段内使用通用数据来校正相位误差。用于HDTV的信道均衡器包括：用于使从外部施加的输入信号作为I信号和Q信号的复合滤波器部分，根据复合滤波器系数对I信号和Q信号进行滤波，并且传输滤波后的I和 Q信号作为第一和第二输出信号。一种复合滤波器恢复部件，用于使用从信道均衡器外部接收的同步信号，第一和第二输出信号以及计算实际复合滤波器系数和虚拟复合滤波器系数来计算训练序列的误差和一般数据的误差基于复合滤波器部分产生的I信号和Q信号的误差以及一般数据的训练序列和误差，并将计算出的误差传送到复合滤波器部分。

6. 发明授权

US5192992A BICMOS device and manufacturing method thereof 失效
标题翻译： BICMOS器件及其制造方法
公开(公告)号：US5192992A
公开(公告)日：1993-03-09
申请号：US794739
申请日：1991-11-18
申请人： Myung S. Kim , Jong G. Kim , Hyun S. Kim
发明人： Myung S. Kim , Jong G. Kim , Hyun S. Kim
IPC分类号： H01L21/28 , H01L21/8228 , H01L21/8234 , H01L21/8249 , H01L27/06 , H01L27/082 , H01L27/088
CPC分类号： H01L27/0623 , H01L21/28061 , H01L21/8249
摘要： A BICMOS device and manufacturing method wherein the gates of PMOS and NMOS transistors are formed by forming a first polysilicon layer which is not implanted by an impurity and forming a second polysilicon layer on the first polysilicon layer which is impurity implanted, so that the impurity doped in the second polysilicon layer is prevented from diffusing into the channel region and the voltage characteristic is prevented from changing. Emitter regions of vertical PNP and NPN bipolar transistors are self-aligned in a small chip area, and thereby the performance of the BICMOS device is improved due to the stable threshold voltage characteristic of the PMOS and NMOS transistors and high density is achieved together with improved operation speed clue to the self-alignment formation of the emitter region of the vertical PNP and NPN bipolar transistors.
摘要翻译：一种BICMOS器件及其制造方法，其中PMOS和NMOS晶体管的栅极通过形成未被杂质注入的第一多晶硅层并在杂质注入的第一多晶硅层上形成第二多晶硅层形成，使得杂质掺杂在第二多晶硅层中防止扩散到沟道区，并且防止电压变化。垂直PNP和NPN双极晶体管的发射极区域在小芯片区域中自对准，从而由于PMOS和NMOS晶体管的稳定的阈值电压特性而提高了BICMOS器件的性能，并且实现了高密度对垂直PNP和NPN双极晶体管的发射极区域的自对准形成的操作速度线索。

7. 发明授权

US4978630A Fabrication method of bipolar transistor 失效
标题翻译：双极晶体管的制造方法
公开(公告)号：US4978630A
公开(公告)日：1990-12-18
申请号：US249310
申请日：1988-09-26
申请人： Myung S. Kim
发明人： Myung S. Kim
IPC分类号： H01L29/73 , H01L21/266 , H01L21/285 , H01L21/331 , H01L21/8224 , H01L21/8228 , H01L27/082 , H01L29/06 , H01L29/40 , H01L29/70 , H01L29/732
CPC分类号： H01L29/402 , H01L21/266 , H01L21/28525 , H01L21/8224 , H01L29/6625 , Y10S148/01 , Y10S148/096
摘要： Present invention relates to the fabrication method of the bipolar transistor which includes NPN transistor and field-plate lateral PNP transistor.The arsenic implanted polycrystalline silicon is used for the emitter electrode of NPN transistor to increase the current gain, and for the field-plate of the lateral PNP transistor to reduce the collector-emitter leakage current.Also, this polycrystalline silicon is used for the ion implanting mask for the extrinsic base of the NPN transistor and for the emitter, collector of the lateral PNP transistor simultaneously.Therefore, the extrinisc base of NPN transistor and the emitter, collector of the lateral PNP transistor are self-aligned by the polycrystalline silicon, and so one mask is saved by this method.
摘要翻译：本发明涉及包括NPN晶体管和场板侧PNP晶体管的双极晶体管的制造方法。砷注入的多晶硅用于NPN晶体管的发射极，以增加电流增益，并且用于横向PNP晶体管的场板，以减少集电极 - 发射极漏电流。此外，该多晶硅用于NPN晶体管的外部基极的离子注入掩模和用于横向PNP晶体管的发射极，集电极的离子注入掩模。因此，NPN晶体管的外部基极和横向PNP晶体管的发射极，集电极由多晶硅自对准，因此通过该方法节省了一个掩模。

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