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1. 发明申请

US20130248804A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THE SAME 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20130248804A1
公开(公告)日：2013-09-26
申请号：US13601353
申请日：2012-08-31
申请人： Murato KAWAI
发明人： Murato KAWAI
IPC分类号： H01L45/00
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1608 , H01L45/1675
摘要： A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The variable resistance layer is provided above the first conductive layer. The electrode layer contacts an upper surface of the variable resistance layer. The first liner layer contacts the upper surface of the electrode layer. The stopper layer contacts the upper surface of the first liner layer. The second conductive layer is provided above the stopper layer. The first liner layer is made of a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer.
摘要翻译：根据实施例的半导体存储装置包括第一导电层，可变电阻层，电极层，第一衬里层，阻挡层和第二导电层。可变电阻层设置在第一导电层的上方。电极层与可变电阻层的上表面接触。第一衬垫层接触电极层的上表面。止动层接触第一衬里层的上表面。第二导电层设置在阻挡层上方。第一衬里层由具有用于抵消第一衬里层的下层的取向的影响的性质的材料制成，与阻挡层相比，第一衬里层的性质优异。

2. 发明授权

US08153487B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08153487B2
公开(公告)日：2012-04-10
申请号：US12659482
申请日：2010-03-10
申请人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
发明人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
IPC分类号： H01L21/336 , H01L21/4763 , H01L21/44
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film comprising a plurality of insulating films provided on the charge storage layer and comprising a nitride film as an uppermost layer, and a single-layer control gate electrode provided on the second insulating film and comprising metal silicide.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的第一绝缘膜，设置在第一绝缘膜上的电荷存储层，第二绝缘膜，包括设置在电荷存储层上的多个绝缘膜，并且包括氮化物膜以及设置在第二绝缘膜上并且包括金属硅化物的单层控制栅电极。

3. 发明申请

US20120211721A1 SEMICONDUCTOR STORAGE DEVICE AND MANUFACTURING METHOD THEREOF 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20120211721A1
公开(公告)日：2012-08-23
申请号：US13402058
申请日：2012-02-22
申请人： Murato Kawai
发明人： Murato Kawai
IPC分类号： H01L45/00 , H01L21/8239
CPC分类号： H01L45/1675 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/1233
摘要： A method of manufacturing a semiconductor storage device according to an embodiment includes: stacking a first wiring layer; stacking a memory cell layer on the first wiring layer; and stacking a stopper film on the memory cell layer. The method of manufacturing a semiconductor storage device also includes: etching the stopper film, the memory cell layer, and the first wiring layer; polishing an interlayer insulating film to the stopper film after burying the stopper film, the memory cell layer, and the first wiring layer with the interlayer insulating film; performing a nitridation process to the stopper film and the interlayer insulating film to form an adjustment film and a block film on surfaces of the stopper film and the interlayer insulating film, respectively; and forming a second wiring layer on the adjustment film, the second wiring layer being electrically connected to the adjustment film.
摘要翻译：根据实施例的半导体存储装置的制造方法包括：堆叠第一布线层; 在第一布线层上堆叠存储单元层; 并在所述存储单元层上层叠阻挡膜。制造半导体存储装置的方法还包括：蚀刻阻挡膜，存储单元层和第一布线层; 在用所述层间绝缘膜掩埋所述阻挡膜，所述存储单元层和所述第一布线层之后，向所述阻挡膜抛光层间绝缘膜; 对阻挡膜和层间绝缘膜进行氮化处理，分别在阻挡膜和层间绝缘膜的表面上形成调整膜和阻挡膜; 以及在所述调整膜上形成第二布线层，所述第二布线层电连接到所述调整膜。

4. 发明申请

US20100184275A1 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20100184275A1
公开(公告)日：2010-07-22
申请号：US12659482
申请日：2010-03-10
申请人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
发明人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film comprising a plurality of insulating films provided on the charge storage layer and comprising a nitride film as an uppermost layer, and a single-layer control gate electrode provided on the second insulating film and comprising metal silicide.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的第一绝缘膜，设置在第一绝缘膜上的电荷存储层，第二绝缘膜，包括设置在电荷存储层上的多个绝缘膜，并且包括氮化物膜以及设置在第二绝缘膜上并且包括金属硅化物的单层控制栅电极。

5. 发明申请

US20070201275A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070201275A1
公开(公告)日：2007-08-30
申请号：US11699501
申请日：2007-01-30
申请人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
发明人： Wakako Takeuchi , Hiroshi Akahori , Murato Kawai
IPC分类号： G11C16/04
CPC分类号： H01L27/115 , H01L27/11521 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film comprising a plurality of insulating films provided on the charge storage layer and comprising a nitride film as an uppermost layer, and a single-layer control gate electrode provided on the second insulating film and comprising metal silicide.
摘要翻译：半导体器件包括半导体衬底，设置在半导体衬底上的第一绝缘膜，设置在第一绝缘膜上的电荷存储层，第二绝缘膜，包括设置在电荷存储层上的多个绝缘膜，并且包括氮化物膜以及设置在第二绝缘膜上并且包括金属硅化物的单层控制栅电极。

6. 发明授权

US09018611B2 Semiconductor storage device and manufacturing method the same 有权
标题翻译：半导体存储装置及其制造方法相同
公开(公告)号：US09018611B2
公开(公告)日：2015-04-28
申请号：US13601353
申请日：2012-08-31
申请人： Murato Kawai
发明人： Murato Kawai
IPC分类号： H01L29/02 , H01L45/00 , H01L27/24
CPC分类号： H01L45/1253 , H01L27/2409 , H01L27/2481 , H01L45/04 , H01L45/1233 , H01L45/1608 , H01L45/1675
摘要： A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The variable resistance layer is provided above the first conductive layer. The electrode layer contacts an upper surface of the variable resistance layer. The first liner layer contacts the upper surface of the electrode layer. The stopper layer contacts the upper surface of the first liner layer. The second conductive layer is provided above the stopper layer. The first liner layer is made of a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer.
摘要翻译：根据实施例的半导体存储装置包括第一导电层，可变电阻层，电极层，第一衬里层，阻挡层和第二导电层。可变电阻层设置在第一导电层的上方。电极层与可变电阻层的上表面接触。第一衬垫层接触电极层的上表面。止动层接触第一衬里层的上表面。第二导电层设置在阻挡层上方。第一衬里层由具有用于抵消第一衬里层的下层的取向的影响的性质的材料制成，与阻挡层相比，第一衬里层的性质优异。

7. 发明授权

US08772754B2 Semiconductor storage device comprising a memory cell array including a rectifying element and a variable resistor 失效
标题翻译：半导体存储装置包括包括整流元件和可变电阻器的存储单元阵列
公开(公告)号：US08772754B2
公开(公告)日：2014-07-08
申请号：US13402058
申请日：2012-02-22
申请人： Murato Kawai
发明人： Murato Kawai
IPC分类号： H01L29/06
CPC分类号： H01L45/1675 , H01L27/2409 , H01L27/2463 , H01L45/085 , H01L45/1233
摘要： A method of manufacturing a semiconductor storage device according to an embodiment includes: stacking a first wiring layer; stacking a memory cell layer on the first wiring layer; and stacking a stopper film on the memory cell layer. The method of manufacturing a semiconductor storage device also includes: etching the stopper film, the memory cell layer, and the first wiring layer; polishing an interlayer insulating film to the stopper film after burying the stopper film, the memory cell layer, and the first wiring layer with the interlayer insulating film; performing a nitridation process to the stopper film and the interlayer insulating film to form an adjustment film and a block film on surfaces of the stopper film and the interlayer insulating film, respectively; and forming a second wiring layer on the adjustment film, the second wiring layer being electrically connected to the adjustment film.
摘要翻译：根据实施例的半导体存储装置的制造方法包括：堆叠第一布线层; 在第一布线层上堆叠存储单元层; 并在所述存储单元层上层叠阻挡膜。制造半导体存储装置的方法还包括：蚀刻阻挡膜，存储单元层和第一布线层; 在用所述层间绝缘膜掩埋所述阻挡膜，所述存储单元层和所述第一布线层之后，向所述阻挡膜抛光层间绝缘膜; 对阻挡膜和层间绝缘膜进行氮化处理，分别在阻挡膜和层间绝缘膜的表面上形成调整膜和阻挡膜; 以及在所述调整膜上形成第二布线层，所述第二布线层电连接到所述调整膜。

8. 发明申请

US20110147942A1 METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE 审中-公开
标题翻译：制造半导体存储器件和半导体存储器件的方法
公开(公告)号：US20110147942A1
公开(公告)日：2011-06-23
申请号：US12838960
申请日：2010-07-19
申请人： Katsunori YAHASHI , Takuji Kuniya , Takaya Matsushita , Murato Kawai , Shuichi Taniguchi
发明人： Katsunori YAHASHI , Takuji Kuniya , Takaya Matsushita , Murato Kawai , Shuichi Taniguchi
IPC分类号： H01L23/52 , H01L21/768
CPC分类号： H01L27/0688 , H01L27/2409 , H01L27/2418 , H01L27/2481 , H01L45/085 , H01L45/1233 , H01L45/147 , H01L45/1675
摘要： A method of manufacturing a semiconductor memory device of an embodiment includes: after forming a first interconnection layer and a memory cell layer above a semiconductor substrate, forming first lines by forming first grooves extending in first direction; forming a thin film on the side walls of the first grooves; forming a stack structure by filling an interlayer insulating film in the first grooves; forming a second interconnection layer above the stack structure; forming second lines by forming second grooves extending in second direction; removing the thin film exposed at bottom of the second grooves; and forming columnar memory cells by removing the memory cell layer exposed at bottom of the second grooves. The thin film has higher etching rate than the interlayer insulating film, and is removed prior to portions of the memory cell layer adjoining the thin film.
摘要翻译：制造实施例的半导体存储器件的方法包括：在半导体衬底之上形成第一互连层和存储单元层之后，通过形成沿第一方向延伸的第一沟槽来形成第一线; 在第一槽的侧壁上形成薄膜; 通过在第一槽中填充层间绝缘膜形成堆叠结构; 在所述堆叠结构之上形成第二互连层; 通过形成沿第二方向延伸的第二凹槽形成第二线; 去除在第二凹槽的底部暴露的薄膜; 以及通过去除在第二凹槽的底部暴露的存储单元层来形成柱状存储单元。薄膜具有比层间绝缘膜更高的蚀刻速率，并且在与薄膜邻接的存储单元层的部分之前被去除。

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