专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110089538A1 LOW ETCH PIT DENSITY (EPD) SEMI-INSULATING III-V WAFERS 审中-公开
标题翻译：低密度密度（EPD）半绝缘III-V波形
公开(公告)号：US20110089538A1
公开(公告)日：2011-04-21
申请号：US12991911
申请日：2008-05-09
申请人： Weiguo Liu , Morris S. Young , M.Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M.Hani Badawi
IPC分类号： H01L29/06 , H01L21/20
CPC分类号： C30B11/00 , C30B29/42 , C30B33/02 , H01L21/3228
摘要： Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.
摘要翻译：公开了使用低EPD晶体生长工艺制造晶圆的系统和方法，并且提供晶片退火工艺，从而产生从晶片提供更高的器件产量的III-V / GaAs晶片。在一个示例性实施方案中，提供了制造具有低蚀刻坑密度（EPD）的基于III族的材料的方法。此外，该方法包括形成多晶III族化合物，并使用多晶III族化合物进行垂直梯度冷冻晶体生长。其它示例性实施方案可以包括在形成基于III族的晶体期间控制温度梯度以提供非常低的蚀刻坑密度。

2. 发明授权

US4148129A Aluminum-stabilized multifilamentary superconductor and method of its manufacture 失效
标题翻译：铝稳定复丝超导体及其制造方法
公开(公告)号：US4148129A
公开(公告)日：1979-04-10
申请号：US737868
申请日：1976-11-01
申请人： Morris S. Young
发明人： Morris S. Young
IPC分类号： H01L39/14 , H01V11/00
CPC分类号： H01L39/14 , Y10S505/918 , Y10S505/929 , Y10S505/93 , Y10T29/49014
摘要： A multifilamentary superconductor having a large number fo NbTi filaments in an aluminum alloy matrix which is stabilized by a high-purity aluminum sheath is disclosed, together with the method of its manufacture. An Al alloy billet having a number of NbTi rods disposed therein is extruded. A superpure Al sheath is added; this product is then enclosed in copper and wiredrawn after which the copper is etched off.
摘要翻译：公开了一种通过高纯度铝护套稳定的铝合金基体中具有大量NbTi长丝的多丝超导体及其制造方法。挤出具有设置在其中的多个NbTi棒的Al合金坯料。加入超纯Al鞘; 然后将该产品封装在铜中并拉丝，之后将铜蚀刻掉。

3. 发明授权

US4242536A Aluminum-stabilized multifilamentary superconductor 失效
标题翻译：铝稳定复丝超导体
公开(公告)号：US4242536A
公开(公告)日：1980-12-30
申请号：US4138
申请日：1979-01-17
申请人： Morris S. Young
发明人： Morris S. Young
IPC分类号： H01L39/14 , H01B12/00
CPC分类号： H01L39/14 , Y10S505/877 , Y10T29/49014
摘要： A multifilamentary superconductor having a large number of NbTi filaments in an aluminum alloy matrix which is stabilized by a high-purity aluminum sheath is disclosed, together with the method of its manufacture. An Al alloy billet having a number of NbTi rods disposed therein is extruded. A superpure Al sheath is added; this product is then enclosed in copper and wiredrawn after which the copper is etched off.
摘要翻译：公开了一种通过高纯度铝护套稳定的铝合金基体中具有大量NbTi长丝的多丝超导体及其制造方法。挤出具有设置在其中的多个NbTi棒的Al合金坯料。加入超纯Al鞘; 然后将该产品封装在铜中并拉丝，之后将铜蚀刻掉。

4. 发明授权

US4224735A Method of production multifilamentary intermetallic superconductors 失效
标题翻译：生产多丝金属间超导体的方法
公开(公告)号：US4224735A
公开(公告)日：1980-09-30
申请号：US23103
申请日：1979-03-23
申请人： Morris S. Young , William G. Marancik
发明人： Morris S. Young , William G. Marancik
IPC分类号： H01L39/24
CPC分类号： H01L39/2409 , Y10S505/921 , Y10T29/49014
摘要： A method of making A-15 type intermetallic superconductors is disclosed which features elimination of numerous annealing steps. Nb or V filaments are embedded in Cu matrices; annular layers of Sn or Ga, respectively, separated from each other by Cu layers, provide the other component of the intermetallic superconductors Nb.sub.3 Sn and V.sub.3 Ga.
摘要翻译：公开了一种制造A-15型金属间超导体的方法，其特征在于消除了许多退火步骤。 Nb或V丝线嵌入Cu基体中; 分别通过Cu层彼此分离的Sn或Ga的环状层提供金属间超导体Nb 3 Sn和V 3 Ga的其它组分。

5. 发明授权

US4205119A Wrapped tantalum diffusion barrier 失效
标题翻译：包裹的钽扩散屏障
公开(公告)号：US4205119A
公开(公告)日：1980-05-27
申请号：US933302
申请日：1978-08-14
申请人： Morris S. Young , David C. Larbalestier
发明人： Morris S. Young , David C. Larbalestier
IPC分类号： B21C1/00 , B21C23/22 , H01B12/00 , H01B13/00 , H01L39/14 , B21C37/12 , H01L39/06
CPC分类号： H01L39/14 , Y10S428/93 , Y10S505/812 , Y10S505/813 , Y10S505/823 , Y10T29/49014 , Y10T428/12486
摘要： A multifilamentary stabilized superconductor of the A-15 type is disclosed wherein the A-15 compound is formed on rods of niobium or vanadium by diffusion of tin or gallium, respectively, from a copper alloy matrix and wherein stabilization is provided by an external layer of copper. The stabilizing copper is protected from tin or gallium diffusion by a number of spirally wrapped layers of tantalum separated from one another by copper layers.
摘要翻译：公开了一种A-15型的复丝稳定超导体，其中通过从铜合金基体分别扩散锡或镓而将A-15化合物形成在铌或钒棒上，其中稳定性由铜。通过被铜层彼此分开的多个螺旋缠绕的钽层来保护稳定的铜不被锡或镓扩散。

6. 发明授权

US08361225B2 Low etch pit density (EPD) semi-insulating III-V wafers 有权
标题翻译：低蚀刻坑密度（EPD）半绝缘III-V晶片
公开(公告)号：US08361225B2
公开(公告)日：2013-01-29
申请号：US13207291
申请日：2011-08-10
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： C01B30/02
CPC分类号： C30B11/00 , C30B29/42 , H01L21/3228 , Y10T428/24372
摘要： Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.
摘要翻译：公开了使用低EPD晶体生长工艺制造晶圆的系统和方法，并且提供晶片退火工艺，从而产生从晶片提供更高的器件产量的III-V / GaAs晶片。在一个示例性实施方案中，提供了制造具有低蚀刻坑密度（EPD）的基于III族的材料的方法。此外，该方法包括形成多晶III族化合物，并使用多晶III族化合物进行垂直梯度冷冻晶体生长。其它示例性实施方案可以包括在形成基于III族的晶体期间控制温度梯度以提供非常低的蚀刻坑密度。

7. 发明授权

US07566641B2 Low etch pit density (EPD) semi-insulating GaAs wafers 有权
标题翻译：低蚀刻坑密度（EPD）半绝缘GaAs晶圆
公开(公告)号：US07566641B2
公开(公告)日：2009-07-28
申请号：US11801712
申请日：2007-05-09
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： H01L21/00
CPC分类号： C30B11/00 , C30B29/42 , C30B33/02 , H01L21/3228
摘要： A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.
摘要翻译：提供了一种使用低EPD晶体生长工艺和晶片退火工艺制造晶片的方法，其导致从晶片提供更高的器件产量的GaAs / InGaP晶片。

8. 发明申请

US20080280427A1 Low etch pit density (EPD) semi-insulating GaAs wafers 有权
标题翻译：低蚀刻坑密度（EPD）半绝缘GaAs晶圆
公开(公告)号：US20080280427A1
公开(公告)日：2008-11-13
申请号：US11801712
申请日：2007-05-09
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： H01L21/208 , C30B11/00
CPC分类号： C30B11/00 , C30B29/42 , C30B33/02 , H01L21/3228
摘要： A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.
摘要翻译：提供了一种使用低EPD晶体生长工艺和晶片退火工艺制造晶片的方法，其导致从晶片提供更高的器件产量的GaAs / InGaP晶片。

9. 发明申请

US20110293890A1 Low Etch Pit Density (EPD) Semi-Insulating III-V Wafers 有权
标题翻译：低蚀刻坑密度（EPD）半绝缘III-V晶片
公开(公告)号：US20110293890A1
公开(公告)日：2011-12-01
申请号：US13207291
申请日：2011-08-10
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： C30B11/02 , B32B3/00
CPC分类号： C30B11/00 , C30B29/42 , H01L21/3228 , Y10T428/24372
摘要： Systems and methods of manufacturing wafers are disclosed using a low EPD crystal growth process and a wafer annealing process are provided resulting in III-V/GaAs wafers that provide higher device yields from the wafer. In one exemplary implementation, there is provided a method of manufacturing a group III based material with a low etch pit density (EPD). Moreover, the method includes forming polycrystalline group III based compounds, and performing vertical gradient freeze crystal growth using the polycrystalline group III based compounds. Other exemplary implementations may include controlling temperature gradient(s) during formation of the group III based crystal to provide very low etch pit density.
摘要翻译：公开了使用低EPD晶体生长工艺制造晶圆的系统和方法，并且提供晶片退火工艺，从而产生从晶片提供更高的器件产量的III-V / GaAs晶片。在一个示例性实施方案中，提供了制造具有低蚀刻坑密度（EPD）的基于III族的材料的方法。此外，该方法包括形成多晶III族化合物，并使用多晶III族化合物进行垂直梯度冷冻晶体生长。其它示例性实施方案可以包括在形成基于III族的晶体期间控制温度梯度以提供非常低的蚀刻坑密度。

10. 发明申请

US20100001288A1 Low Etch Pit Density (EPD) Semi-Insulating GaAs Wafers 审中-公开
标题翻译：低蚀刻坑密度（EPD）半绝缘GaAs晶片
公开(公告)号：US20100001288A1
公开(公告)日：2010-01-07
申请号：US12506209
申请日：2009-07-20
申请人： Weiguo Liu , Morris S. Young , M. Hani Badawi
发明人： Weiguo Liu , Morris S. Young , M. Hani Badawi
IPC分类号： H01L29/04 , H01L21/20
CPC分类号： C30B11/00 , C30B29/42 , C30B33/02 , H01L21/3228
摘要： A method for manufacturing wafers using a low EPD crystal growth process and a wafer annealing process is provided that results in GaAs/InGaP wafers that provide higher device yields from the wafer.
摘要翻译：提供了一种使用低EPD晶体生长工艺和晶片退火工艺制造晶片的方法，其导致从晶片提供更高的器件产量的GaAs / InGaP晶片。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式