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1. 发明授权

US08529750B2 Apparatus and method for detecting biomolecules 有权
标题翻译：用于检测生物分子的装置和方法
公开(公告)号：US08529750B2
公开(公告)日：2013-09-10
申请号：US13062146
申请日：2008-11-20
申请人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
发明人： Chil-Seong Ah , Ansoon Kim , Chan-Woo Park , Chang-Geun Ahn , Jong-Heon Yang , In-Bok Baek , Taeyoub Kim , HyeKyoung Yang , Gun-Yong Sung , Seon-Hee Park , Han-Young Yu , Moon-Gyu Jang
IPC分类号： G01N27/414
CPC分类号： G01N33/54373 , B01L3/502761 , B01L2200/143 , B01L2300/0636 , B01L2300/0645 , B01L2300/0867 , B01L2300/163 , B01L2400/0415 , G01N27/4145
摘要： Provided are an apparatus and method for detecting biomolecules. The apparatus includes a FET having a substrate, a source electrode, a drain electrode, a channel region between the source and drain electrodes, and probe molecules fixed to the channel region, wherein the source and drain electrodes are separated on the substrate, a microfluid supplier selectively supplying one of a reference buffer solution of low ionic concentration and a reaction solution of high ionic concentration containing target molecules, to the channel region of the FET to which the probe molecules are fixed, and a biomolecule detector detecting the target molecules by measuring a first current value of the channel region of the FET, and a second current value of the channel region of the FET to which the target molecules and the probe molecules that bind to each other in the reaction solution of high ionic concentration are fixed.
摘要翻译：提供了用于检测生物分子的装置和方法。该装置包括具有基板，源电极，漏电极，源极和漏极之间的沟道区以及固定到沟道区的探针分子的FET，其中源极和漏极在衬底上分离，微流体供应商选择性地将低离子浓度的参考缓冲溶液和含有靶分子的高离子浓度的反应溶液中的一种提供给探针分子固定的FET的通道区域，以及通过测量来检测靶分子的生物分子检测器 FET的沟道区域的第一电流值和在高离子浓度的反应溶液中彼此结合的靶分子和探针分子的FET的沟道区域的第二电流值是固定的。

2. 发明授权

US08461798B2 Apparatus and method for extracting maximum power from solar cell by changing the duty cycle of a pulse width modulation signal 失效
标题翻译：通过改变脉冲宽度调制信号的占空比来提取太阳能电池的最大功率的装置和方法
公开(公告)号：US08461798B2
公开(公告)日：2013-06-11
申请号：US12878443
申请日：2010-09-09
申请人： Se Wan Heo , Yil Suk Yang , Jae Woo Lee , Moon Gyu Jang , Jong Dae Kim
发明人： Se Wan Heo , Yil Suk Yang , Jae Woo Lee , Moon Gyu Jang , Jong Dae Kim
IPC分类号： H02J7/00
CPC分类号： H02J7/35 , G05F1/67 , Y02E10/566 , Y02E10/58
摘要： An apparatus and method for extracting maximum power from a solar cell are provided. The apparatus includes a solar cell for producing power from solar energy, a maximum power extractor for generating a pulse width modulation signal for extracting the maximum power from the solar cell, and a DC-DC converter for adjusting an amount of current generated from the solar cell according to the pulse width modulation signal.
摘要翻译：提供一种从太阳能电池提取最大功率的装置和方法。该装置包括用于从太阳能产生电能的太阳能电池，用于产生用于从太阳能电池提取最大功率的脉宽调制信号的最大功率提取器，以及用于调节从太阳能产生的电流量的DC-DC转换器单元根据脉宽调制信号。

3. 发明申请

US20130139864A1 THERMOELECTRIC DEVICES 有权
标题翻译：热电装置
公开(公告)号：US20130139864A1
公开(公告)日：2013-06-06
申请号：US13611189
申请日：2012-09-12
申请人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
发明人： Younghoon Hyun , Moon Gyu Jang , Young Sam Park , Taehyoung Zyung , Yil Suk Yang , Jong-Kee Kwon
IPC分类号： H01L35/32 , H01L35/14 , H01L35/16 , B82Y99/00
CPC分类号： H01L35/32 , B82Y30/00
摘要： Provided is a thermoelectric device including two legs having a rough side surface and a smooth side surface facing each other. Phonons may be scattered by the rough side surface, thereby decreasing thermal conductivity of the device. Flowing paths for electrons and phonons may become different form each other, because of a magnetic field induced by an electric current passing through the legs. The smooth side surface may be used for the flowing path of electrons. As a result, in the thermoelectric device, thermal conductivity can be reduced and electric conductivity can be maintained.
摘要翻译：提供一种热电装置，其包括具有粗糙侧表面和彼此面对的平滑侧表面的两个腿。声子可能被粗糙的侧面散射，从而降低了装置的热导率。电子和声子的流动路径可能由于由通过腿部的电流引起的磁场而彼此不同。光滑的侧面可以用于电子的流动路径。结果，在热电装置中，可以降低导热性并且可以保持导电性。

4. 发明授权

US08394657B2 Biosensor using nanodot and method of manufacturing the same 有权
标题翻译：使用纳米点的生物传感器及其制造方法
公开(公告)号：US08394657B2
公开(公告)日：2013-03-12
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
发明人： Tae Youb Kim , Chil Seong Ah , Chang Geun Ahn , Han Young Yu , Jong Heon Yang , Moon Gyu Jang
IPC分类号： H01L29/72
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

5. 发明授权

US08241939B2 Semiconductor nanowire sensor device and method for manufacturing the same 有权
标题翻译：半导体纳米线传感器装置及其制造方法
公开(公告)号：US08241939B2
公开(公告)日：2012-08-14
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L21/00 , H01L29/06
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor includes forming a silicon nanowire channel, etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：制造生物传感器的方法包括形成硅纳米线通道，蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线以与第一导电类型相反的第二导电类型的杂质掺杂第一导电型单晶硅线图案的两个侧壁以形成第二导电型沟道，形成第二导电型垫，用于在第一导电型单晶硅线图案的两端，在第一导电型单晶硅线图案的未掺杂区域中形成用于施加反向偏置电压以使第一导电型单晶硅线型图案绝缘的第一电极晶体硅线图案和第二导电型沟道，并且形成用于施加双面的第二电极在第二导电型垫上的第二导电类型沟道上的电压。

6. 发明申请

US20120015467A1 BIOSENSOR USING NANODOT AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：使用NANODOT的生物传感器及其制造方法
公开(公告)号：US20120015467A1
公开(公告)日：2012-01-19
申请号：US13240943
申请日：2011-09-22
申请人： Tae Youb KIM , Chil Seong AH , Chang Geun AHN , Han Young YU , Jong Heon YANG , Moon Gyu JANG
发明人： Tae Youb KIM , Chil Seong AH , Chang Geun AHN , Han Young YU , Jong Heon YANG , Moon Gyu JANG
IPC分类号： H01L21/335 , B82Y40/00
CPC分类号： G01N33/5432 , G01N27/4145 , G01N27/4146 , G01N33/5438 , Y10S977/721 , Y10S977/784 , Y10S977/938
摘要： A biosensor using a nanodot and a method of manufacturing the same are provided. A silicon nanowire can be formed by a CMOS process to reduce manufacturing costs. In addition, an electrically charged nanodot is coupled to a target molecule to be detected, in order to readily change conductivity of the silicon nanowire, thereby making it possible to implement a biosensor capable of providing good sensitivity and being manufactured at a low cost.
摘要翻译：提供了使用纳米点的生物传感器及其制造方法。可以通过CMOS工艺形成硅纳米线，以降低制造成本。此外，为了容易地改变硅纳米线的导电性，带电的纳米点被耦合到待检测的靶分子，从而可以实现能够提供良好的灵敏度并以低成本制造的生物传感器。

7. 发明申请

US20110194976A1 DETECTION DEVICE AND SYSTEM 有权
标题翻译：检测装置和系统
公开(公告)号：US20110194976A1
公开(公告)日：2011-08-11
申请号：US12682545
申请日：2008-06-13
申请人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
发明人： Chang Geun Ahn , Chan Woo Park , Jong Heon Yang , In Bok Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Seon Hee Park
IPC分类号： G01N33/48 , H01L27/06
CPC分类号： G01N27/4145 , Y10T436/11
摘要： A detection device and system are provided. The detection device includes a detection capacitor and a Field Effect Transistor (FET). The detection capacitor has a reactive material layer reacting to a specific functional group in a fluid, and first and second electrodes disposed on the both surfaces of an insulating layer, and the FET has a source electrode connected with the second electrode, a gate electrode connected with the first electrode, and a drain electrode. Here, the insulating layer of the detection capacitor is thicker than a gate insulating layer of the FET.
摘要翻译：提供检测装置和系统。检测装置包括检测电容器和场效应晶体管（FET）。检测电容器具有与流体中的特定官能团反应的反应性物质层，以及设置在绝缘层两面的第一和第二电极，并且所述FET具有与所述第二电极连接的源电极，连接有栅电极与第一电极和漏电极。这里，检测电容器的绝缘层比FET的栅极绝缘层厚。

8. 发明申请

US20100270530A1 SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体纳米传感器器件及其制造方法
公开(公告)号：US20100270530A1
公开(公告)日：2010-10-28
申请号：US12682571
申请日：2008-07-24
申请人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
发明人： Chan Woo Park , Chang Geun Ahn , Jong Heon Yang , In Book Baek , Chil Seong Ah , Han Young Yu , An Soon Kim , Tae Youb Kim , Moon Gyu Jang , Myung Sim Jun
IPC分类号： H01L29/775 , H01L21/336
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y15/00 , H01L29/0673 , H01L29/78696
摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.
摘要翻译：提供一种制造生物传感器装置的方法。该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线图案，掺杂第一导电型单晶硅线阵列的两个侧壁，形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型并且形成用于在第二导通型通道上施加偏置电压的第二电极导电型垫。

9. 发明申请

US20090250756A1 N-TYPE SCHOTTKY BARRIER TUNNEL TRANSISTOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译： N型肖特基隧道式隧道式晶体管及其制造方法
公开(公告)号：US20090250756A1
公开(公告)日：2009-10-08
申请号：US12485777
申请日：2009-06-16
申请人： Yark Yeon Kim , Moon Gyu Jang , Jae Heon Shin , Seong Jae Lee
发明人： Yark Yeon Kim , Moon Gyu Jang , Jae Heon Shin , Seong Jae Lee
IPC分类号： H01L27/12
CPC分类号： H01L29/665 , H01L21/2252 , H01L21/2254 , H01L21/28518 , H01L21/28537 , H01L29/458 , H01L29/4908 , H01L29/66636 , H01L29/7834 , H01L29/7839
摘要： An n-type SBTT and a manufacturing method thereof are provided. The SBTT includes a silicon layer, a gate, a double layer that has a rare-earth metal silicide layer and a transition metal silicide layer. The silicon layer has a channel region. The gate is formed in an overlapping manner on the channel region and has a gate dielectric layer on its interface with respect to the silicon layer. The double layer is formed as a source/drain that has the channel region interposed on the silicon layer.
摘要翻译：提供了n型SBTT及其制造方法。 SBTT包括硅层，栅极，具有稀土金属硅化物层和过渡金属硅化物层的双层。硅层具有沟道区。栅极以重叠的方式形成在沟道区上，并且在其相对于硅层的界面上具有栅极介电层。双层形成为具有介于硅层之间的沟道区的源极/漏极。

10. 发明申请

US20080128786A1 HIGH DENSITY SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：高密度半导体存储器件及其制造方法
公开(公告)号：US20080128786A1
公开(公告)日：2008-06-05
申请号：US11950291
申请日：2007-12-04
申请人： Taeyoub KIM , Myungsim JUN , Yark-Yeon KIM , Moon-Gyu JANG , Chel-Jong CHOI , Seong-Jae LEE , Byoungchul PARK
发明人： Taeyoub KIM , Myungsim JUN , Yark-Yeon KIM , Moon-Gyu JANG , Chel-Jong CHOI , Seong-Jae LEE , Byoungchul PARK
IPC分类号： H01L29/788 , H01L21/336
CPC分类号： H01L29/788 , B82Y10/00 , H01L29/40114 , H01L29/41725 , H01L29/42324 , H01L29/47 , H01L29/66825 , H01L29/7839 , H01L29/78654 , H01L29/7881
摘要： Provided are a high density semiconductor memory device capable of precisely reading data by suppressing the occurrence of a leakage current due to the high-integration of the semiconductor memory device, and a method for manufacturing the semiconductor memory device. The high density semiconductor memory device includes: source and drain electrodes disposed over a substrate, and forming a Schottky junction with a channel region; and a floating gate disposed over the substrate of the channel region, and configured with a plurality of nanodots. The nanodots may be formed of a silicon compound or any material that can be charged.
摘要翻译：提供一种能够通过抑制由于半导体存储器件的高集成度而导致的漏电流的发生而精确读取数据的高密度半导体存储器件以及半导体存储器件的制造方法。高密度半导体存储器件包括：源极和漏极，设置在衬底上，并与沟道区形成肖特基结; 以及浮置栅极，设置在沟道区域的衬底上，并且配置有多个纳米点。纳米点可以由硅化合物或可以被充电的任何材料形成。

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