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    • 1. 发明授权
    • Multi-layered imaging member comprising selenium and tellurium
    • 包含硒和碲的多层成像构件
    • US4609605A
    • 1986-09-02
    • US707978
    • 1985-03-04
    • Barry A. LeesRobert J. FlanaganMonroe J. Hordon
    • Barry A. LeesRobert J. FlanaganMonroe J. Hordon
    • G03G5/08G03G5/04G03G5/043G03G5/082G03G5/09
    • G03G5/0433
    • An electrophotographic imaging member is disclosed consisting essentially of a supporting substrate, a charge transport layer substantially free of arsenic and tellurium and consisting essentially of selenium and a halogen selected from the group consisting of from about 4 parts per million by weight to about 13 parts per million by weight of chlorine and from about 8 parts per million by weight to about 25 parts per million by weight of iodine and a photoconductive charge generator layer comprising selenium, from about 5 percent to about 20 percent by weight tellurium, from about 0.1 percent to about 4 percent by weight arsenic, and a halogen selected from the group consisting of up to about 70 parts per million by weight of chlorine and up to about 140 parts per million by weight of iodine, one surface of the charge generator layer being in operative electrical contact with the charge transport layer and the other surface of the charge generator layer being exposed to the ambient atmosphere. This electrophotographic imaging member may be employed in a process involving depositing a substantially uniform positive electrostatic charge on the exposed surface of the photoconductive charge generator layer of the electrophotographic imaging member, exposing the electrophotographic imaging member to an imagewise pattern of electromagnetic radiation to which the selenium-tellurium-arsenic alloy photoconductive charge generating layer is responsive whereby an electrostatic latent image is formed on the electrophotographic imaging member, developing the electrostatic image with electrostatically attractable toner particles to form a toner particle deposit in image configuration, and transferring the toner particle deposit to a receiving member. The process may be repeated numerous times in an automatic device.
    • 公开了电子照相成像构件,其基本上由支撑衬底,基本上不含砷和碲的电荷输送层组成,并且基本上由硒和选自由约4重量ppm至约13重量份的硒组成的组合 百万分之一重量的氯和约百万分之八十的重量百分比至约25重量%的碘和光导电荷发生器层,其含有硒,约5重量%至约20重量%碲,约0.1重量%至 约4重量%的砷,以及选自由至多约70重量百分比的氯和至多约140重量份的碘组成的组的卤素,电荷发生器层的一个表面在操作中 与电荷输送层和电荷发生器层的另一表面电接触暴露于环境大气中 osphere。 该电子照相成像构件可以用于在电子照相成像构件的光导电荷发生器层的暴露表面上沉积基本上均匀的正静电电荷的工艺,将电子照相成像构件暴露于电磁辐射的成像图案,硒 碲砷合金感光电荷产生层响应于静电潜像形成在电子照相成像构件上,用静电吸引式调色剂颗粒显影静电图像以形成图像构造中的调色剂颗粒沉积物,并将调色剂颗粒沉积物转移到 接收成员。 该过程可以在自动装置中重复多次。
    • 2. 发明授权
    • Alloying and coating process
    • 合金和涂层工艺
    • US5084301A
    • 1992-01-28
    • US576919
    • 1990-09-04
    • Monroe J. HordonLawrence E. Kowalczyk
    • Monroe J. HordonLawrence E. Kowalczyk
    • C22C28/00C01B19/02C22C1/02C23C14/14G03G5/082
    • G03G5/082C01B19/02G03G5/08207
    • Disclosed is an alloying process which comprises, in the order stated (1) heating in a reaction vessel a mixture of selenium and tellurium from ambient temperature to form about 270.degree. C. to about 330.degree. C. while maintaining the mixture in a quiescent state; (2) maintaining the mixture at from about 270.degree. C. to about 330.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (3) subsequently heating the mixture from the range of from about 270.degree. C. to about 330.degree. C. to the range of from about 500.degree. C. to about 580.degree. C. while maintaining the mixture in a quiescent state; (4) maintaining the mixture at from about 500.degree. C. to about 580.degree. C. until the entire mixture has reached substantial equilibrium with respect to temperature while maintaining the mixture in a quiescent state; (5) thereafter maintaining the mixture at from about 500.degree. C. to about 580.degree. C. for from about 0.75 hour to about 1.5 hours while vigorously agitating the mixture; (6) subsequent to agitation, reducing the temperature of the mixture from the range of from about 500.degree. C. to about 580.degree. C. to the range of from about 425.degree. C. to about 450.degree. C. while maintaining the mixture in a quiescent state; (7) subsequently maintaining the temperature of the mixture at from about 425.degree. C. to about 450.degree. C. for from about 4 hours to about 7 hours while maintaining the mixture in a quiescent state; (8) reducing the temperature of the mixture from the range of from about 425.degree. C. to about 450.degree. C. to the range of from about 290.degree. C. to about 350.degree. C. while maintaining the mixture in a quiescent state; and (9) removing the mixture from the reaction vessel. Also disclosed is a process for preparing an imaging member which comprises preparing a selenium-tellurium alloy by the above process and vacuum evaporating the alloy onto a substrate.