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1. 发明授权

US08417072B2 Light emitting device and optical transmission system 有权
标题翻译：发光装置和光传输系统
公开(公告)号：US08417072B2
公开(公告)日：2013-04-09
申请号：US13030433
申请日：2011-02-18
申请人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
发明人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
IPC分类号： G02B6/12
CPC分类号： H01L33/10
摘要： According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.
摘要翻译：根据一个实施例，发光器件包括衬底，发光层，第一导电类型层，第一和第二分布布拉格反射器层。第一导电类型层设置在基板和发光层之间。第一反射层设置在第一导电类型层和衬底之间。第一层和第二层交替堆叠在其中。第二层的折射率与第一层的折射率不同。第一反射器层具有与发射光的发射波长基本相同的中心波长。第二反射层设置在发光层与第一反射层之间。第三层和第四层交替堆叠在其中。第四层的折射率与第三层的折射率不同。第二反射层的中心波长比第一反射层的中心波长长。

2. 发明申请

US20120235191A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND PHOTOCOUPLER 审中-公开
标题翻译：半导体发光器件和光电子器件
公开(公告)号：US20120235191A1
公开(公告)日：2012-09-20
申请号：US13235300
申请日：2011-09-16
申请人： Miwa ISHIDA , Kenji Fujimoto
发明人： Miwa ISHIDA , Kenji Fujimoto
IPC分类号： H01L33/60
CPC分类号： H01L25/167 , H01L33/10 , H01L2924/0002 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting layer, a first layer, a second layer and a distributed Bragg reflector. The light emitting layer has a first and second surfaces and is capable of emitting emission light having a peak wavelength in a range of 740 nm or more and 830 nm or less. The first layer is provided on a side of the first surface and has a light extraction surface. The second layer is provided on a side of the second surface. The distributed Bragg reflector layer is provided on a side of the second layer. A third and fourth layers are alternately stacked. The distributed Bragg reflector layer is capable of reflecting the emission light toward the light extraction surface. The third and fourth layers each have a bandgap wavelength shorter than the peak wavelength.
摘要翻译：根据一个实施例，半导体发光器件包括发光层，第一层，第二层和分布式布拉格反射器。发光层具有第一表面和第二表面，并且能够发射峰值波长在740nm以上且830nm以下的范围内的发光。第一层设置在第一表面的一侧并具有光提取表面。第二层设置在第二表面的一侧。分布式布拉格反射层设置在第二层的一侧。交替堆叠第三层和第四层。分布式布拉格反射层能够将发射光反射到光提取表面。第三层和第四层各自具有比峰值波长短的带隙波长。

3. 发明申请

US20120027341A1 LIGHT EMITTING DEVICE AND OPTICAL TRANSMISSION SYSTEM 有权
标题翻译：发光装置和光传输系统
公开(公告)号：US20120027341A1
公开(公告)日：2012-02-02
申请号：US13030433
申请日：2011-02-18
申请人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
发明人： Koichi Genei , Kenji Fujimoto , Miwa Ishida
IPC分类号： G02B6/12 , H01L33/46
CPC分类号： H01L33/10
摘要： According to one embodiment, a light emitting device includes a substrate, a light emitting layer, a first conductivity type layer, a first and a second distributed Bragg reflector layer. The first conductivity type layer is provided between the substrate and the light emitting layer. The first reflector layer is provided between the first conductivity type layer and the substrate. First and second layers are alternately stacked therein. The second layers have refractive index different from that of the first layers. The first reflector layer has a center wavelength substantially same as emission wavelength of emission light. The second reflector layer is provided between the light emitting layer and the first reflector layer. Third and fourth layers are alternately stacked therein. The fourth layers have refractive index different from that of the third layers. The second reflector layer has a center wavelength longer than the center wavelength of the first reflector layer.
摘要翻译：根据一个实施例，发光器件包括衬底，发光层，第一导电类型层，第一和第二分布布拉格反射器层。第一导电类型层设置在基板和发光层之间。第一反射层设置在第一导电类型层和衬底之间。第一层和第二层交替堆叠在其中。第二层的折射率与第一层的折射率不同。第一反射器层具有与发射光的发射波长基本相同的中心波长。第二反射层设置在发光层与第一反射层之间。第三层和第四层交替堆叠在其中。第四层的折射率与第三层的折射率不同。第二反射层的中心波长比第一反射层的中心波长长。

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