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    • 1. 发明授权
    • Vehicle floor mat
    • 车底垫
    • US08882171B2
    • 2014-11-11
    • US13552198
    • 2012-07-18
    • Takashi GotoKana HarataTohru OhbaTatsuya ShionoHirobumi KikuchiMitsuyoshi Nakamura
    • Takashi GotoKana HarataTohru OhbaTatsuya ShionoHirobumi KikuchiMitsuyoshi Nakamura
    • B60N3/04
    • B60N3/046Y10T16/10
    • Provided is a vehicle floor mat that can reliably maintain a fixed state and includes a mat main body and at least one fastening device for fastening the mat main body to a vehicle. The fastening device includes a first fastening member fixed to the vehicle and a second fastening member fixed to the mat main body. The first fastening member includes a rotating knob rotating about a vertical axis and a lever pivotally provided on an upper section of the knob. The second fastening member includes an insertion receiving section for the knob to be inserted thereinto, and engaged therewith by rotating the knob inserted into the insertion receiving section. A rotation of the knob in an engaged state is restricted by laying the lever. The knob and lever allow the mat main body to be fixed to the vehicle through a two-step fixation mechanism, thus enabling strong fixation.
    • 提供一种能够可靠地保持固定状态并且包括垫主体和至少一个用于将垫主体紧固到车辆的紧固装置的车身地板垫。 紧固装置包括固定到车辆的第一紧固构件和固定到垫主体的第二紧固构件。 第一紧固构件包括围绕垂直轴线旋转的旋转旋钮和可旋转地设置在旋钮的上部的杆。 第二紧固构件包括用于将手柄插入其中的插入容纳部分,并且通过旋转插入到插入容纳部分中的把手与之接合。 处于接合状态的旋钮的旋转通过放置杆来限制。 旋钮和杠杆允许垫主体通过两步式固定机构固定到车辆上,从而能够牢固固定。
    • 2. 发明授权
    • Tailgate structure
    • 尾门结构
    • US08220855B2
    • 2012-07-17
    • US12309434
    • 2008-06-12
    • Mitsuyoshi Nakamura
    • Mitsuyoshi Nakamura
    • B60J5/00B60J5/10B62D25/10
    • B60J5/107E05B53/00E05B83/16E05B85/18
    • A tailgate structure having a tailgate (17) composed of an outer panel (31), a frame (32), and a lining (33); and a lock mechanism (43). The frame has an opening (61) formed between the lock mechanism and a mounting hole (35) for an externally mounted component, the hole being formed in the outer panel. The lining has a protrusion (68) that protrudes toward the exterior of the vehicle. The protrusion is positioned on a line that connects the mounting hole and the lock mechanism. When a rod-shaped member is inserted into the tailgate from the mounting hole, the rod-shaped member will come into contact with the protrusion and will not reach the lock mechanism.
    • 具有由外板(31),框架(32)和衬里(33)组成的后挡板(17)的后挡板结构; 和锁定机构(43)。 框架具有形成在锁定机构和用于外部安装的部件的安装孔(35)之间的开口(61),该孔形成在外部面板中。 衬里具有朝向车辆外部突出的突起(68)。 突出部位于连接安装孔和锁定机构的线上。 当杆状构件从安装孔插入后挡板时,杆状构件将与突起接触并且不会到达锁定机构。
    • 4. 发明申请
    • TAILGATE STRUCTURE
    • TAILGATE结构
    • US20100019522A1
    • 2010-01-28
    • US12309434
    • 2008-06-12
    • Mitsuyoshi Nakamura
    • Mitsuyoshi Nakamura
    • B62D25/10
    • B60J5/107E05B53/00E05B83/16E05B85/18
    • A tailgate structure having a tailgate (17) composed of an outer panel (31), a frame (32), and a lining (33); and a lock mechanism (43). The frame has an opening (61) formed between the lock mechanism and a mounting hole (35) for an externally mounted component, the hole being formed in the outer panel. The lining has a protrusion (68) that protrudes toward the exterior of the vehicle. The protrusion is positioned on a line that connects the mounting hole and the lock mechanism. When a rod-shaped member is inserted into the tailgate from the mounting hole, the rod-shaped member will come into contact with the protrusion and will not reach the lock mechanism.
    • 具有由外板(31),框架(32)和衬里(33)组成的后挡板(17)的后挡板结构; 和锁定机构(43)。 框架具有形成在锁定机构和用于外部安装的部件的安装孔(35)之间的开口(61),该孔形成在外部面板中。 衬里具有朝向车辆外部突出的突起(68)。 突出部位于连接安装孔和锁定机构的线上。 当杆状构件从安装孔插入后挡板时,杆状构件将与突起接触并且不会到达锁定机构。
    • 7. 发明授权
    • Insulated gate field effect transistor with high breakdown voltage
    • 具有高击穿电压的绝缘栅场效应晶体管
    • US5144389A
    • 1992-09-01
    • US583384
    • 1990-09-17
    • Mitsuyoshi NakamuraKazuaki Miyata
    • Mitsuyoshi NakamuraKazuaki Miyata
    • H01L21/336H01L29/06H01L29/78
    • H01L29/7835H01L29/0626
    • An MIS FET has an off-set gate structure in which a gate electrode and a drain region. The drain region is formed of an n type impurity region of a high concentration and has a pn junction region provided between the drain region and the p type silicon substrate. Further, n type impurity regions of the low concentration are in contact with a part of a peripheral portion of the n type impurity regions of the high concentration. The n type impurity regions of the low concentration alleviate the concentration of the electric field near the drain region to increase the drain breakdown voltage. The pn junction region of the n type impurity region of the high concentration and the p type silicon substrate increases a junction capacitance of the entire drain region, increases a surge current discharged to the substrate side from the drain region for the surge breakdown to increase the surge withstanding amount.
    • MIS FET具有栅极电极和漏极区域的偏置栅极结构。 漏极区域由高浓度的n型杂质区域形成,并且在漏极区域和p型硅衬底之间具有pn结区域。 此外,低浓度的n型杂质区域与高浓度的n型杂质区域的周边部分的一部分接触。 低浓度的n型杂质区域减小了漏极区域附近的电场浓度,从而提高了漏极击穿电压。 高浓度的n型杂质区域的pn结区域和p型硅衬底增加了整个漏极区域的结电容,从而从浪涌击穿的漏极区域增加了从衬底侧排出的浪涌电流,从而增加了 浪费的金额。