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    • 2. 发明授权
    • Production of amorphous silicon film
    • 生产非晶硅膜
    • US4452828A
    • 1984-06-05
    • US376632
    • 1982-05-10
    • Masaharu NambaMitsuru YamauchiToyoki Kazama
    • Masaharu NambaMitsuru YamauchiToyoki Kazama
    • H01L31/04C23C16/50H01L21/205H01L31/20B05D3/04B05D3/14
    • H01L31/202C23C16/50H01L21/02425H01L21/02532H01L21/0262Y02E10/50Y02P70/521
    • Disclosed is an production method for plasma chemical vapor deposition (CVD) of amorphous silicon films providing improved throughput and film yield. According to the present invention, a glow discharge is generated in a reaction chamber containing a gaseous silicon-containing compound, such as monosilane (SiH.sub.4) or tetraflourosilane (SiF.sub.4), by the imposition of an electric field between a pair of spaced-apart electrodes within the chamber. The electric field is established by connecting an appropriate DC or high frequency driving voltage to one of the pair of electrodes and ground potential to the other. In the case where a high frequency driving voltage is used, connection to the driven electrode is made through a coupling capacitor, and the frequency of the driving voltage is selected such that a DC potential develops between the pair of electrodes. Substrates on which amorphous silicon films are to be deposited are positioned adjacent to each one of the electrodes, and the connections for the driving voltage and ground to the electrodes are periodically reversed during film deposition. In an alternative embodiment of the invention, multiple pairs of electrodes are arranged within the reaction chamber.
    • 公开了提供提高生产量和膜产率的非晶硅膜的等离子体化学气相沉积(CVD)的制备方法。 根据本发明,通过在一对间隔开的电极之间施加电场,在含有气态含硅化合物如甲硅烷(SiH 4)或四氟乙烷(SiF 4))的反应室中产生辉光放电 在房间内 通过将适当的DC或高频驱动电压连接到一对电极中的一个和地电位而建立电场。 在使用高频驱动电压的情况下,通过耦合电容器与驱动电极的连接,选择驱动电压的频率使得在一对电极之间产生直流电位。 要沉积非晶硅膜的衬底位于每个电极附近,并且在膜沉积期间驱动电压和对电极的接地的连接周期性地反转。 在本发明的替代实施例中,多对电极布置在反应室内。