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1. 发明授权

US4771638A Semiconductor pressure sensor 失效
标题翻译：半导体压力传感器
公开(公告)号：US4771638A
公开(公告)日：1988-09-20
申请号：US154648
申请日：1988-02-10
申请人： Susumu Sugiyama , Takashi Suzuki , Mitsuharu Takigawa
发明人： Susumu Sugiyama , Takashi Suzuki , Mitsuharu Takigawa
IPC分类号： G01L9/00 , G01L7/08 , G01L9/06
CPC分类号： G01L9/0055 , G01L9/0042 , Y10S73/04
摘要： A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film.
摘要翻译：由采用薄膜形成技术形成的基板和形成在基板的表面上的隔膜构成的半导体压力传感器。该传感器包括绝缘膜片，该绝缘膜片由半导体衬底的主表面上的耐蚀刻材料形成，以便涂覆它，至少一个蚀刻孔被设置成穿透隔膜并到达衬底，参考通过蚀刻形成的压力室，以通过蚀刻孔去除一部分半导体衬底和消失膜;以及至少一个应变计，其设置在隔膜的压力接收区域中的预定位置处。

2. 发明授权

US4766666A Semiconductor pressure sensor and method of manufacturing the same 失效
标题翻译：半导体压力传感器及其制造方法
公开(公告)号：US4766666A
公开(公告)日：1988-08-30
申请号：US911245
申请日：1986-09-24
申请人： Susumu Sugiyama , Takashi Suzuki , Mitsuharu Takigawa
发明人： Susumu Sugiyama , Takashi Suzuki , Mitsuharu Takigawa
IPC分类号： G01L9/00 , G01L7/08 , G01L9/06 , H01C17/00
CPC分类号： G01L9/0055 , G01L9/0042 , Y10S73/04 , Y10T29/49103 , Y10T29/49877
摘要： A semiconductor pressure sensor composed of a substrate formed adopting a thin-film forming technique and a diaphragm which is formed on the surface of the substrate. The sensor includes an insulating diaphragm film which is formed of an etching-resistant material on the main surface of the semiconductor substrate such as to coat it, at least one etching hole provided such as to penetrate the diaphragm film and reach the substrate, a reference pressure chamber which is formed by etching to remove a part of the semiconductor substrate and a disappearing film through the etching hole, and at least one strain gage which is provided at a predetermined position in the pressure receiving region of the diaphragm film. All the processing steps of the sensor are conducted solely on the main surface of the semiconductor substrate, namely, on a single side. Therefore, it is possible to manufacture the sensor itself utilizing the substantially same technique as the known integrated circuit manufacturing technique and to form the diaphragm with a predetermined thickness such that it may process a thin and precisely dimensioned thickness.
摘要翻译：由采用薄膜形成技术形成的基板和形成在基板的表面上的隔膜构成的半导体压力传感器。该传感器包括绝缘膜片，该绝缘膜片由半导体衬底的主表面上的耐蚀刻材料形成，以便涂覆它，至少一个蚀刻孔被设置成穿透隔膜并到达衬底，参考通过蚀刻形成的压力室，以通过蚀刻孔去除一部分半导体衬底和消失膜;以及至少一个应变计，其设置在隔膜的压力接收区域中的预定位置处。传感器的所有处理步骤仅在半导体基板的主表面上，即单面进行。因此，可以利用与已知的集成电路制造技术基本相同的技术来制造传感器本身并且以预定的厚度形成隔膜，使得其可以处理薄且精确尺寸的厚度。

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