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1. 发明授权

US5443032A Method for the manufacture of large single crystals 失效
标题翻译：制造大型单晶的方法
公开(公告)号：US5443032A
公开(公告)日：1995-08-22
申请号：US895482
申请日：1992-06-08
申请人： Miroslav Vichr , David S. Hoover
发明人： Miroslav Vichr , David S. Hoover
IPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B29/04 , C30B33/08 , H01L21/205 , H01L21/314 , C30B25/06
CPC分类号： C30B25/02 , C30B25/18 , C30B29/36 , C30B29/40
摘要： A method is disclosed for producing large single crystals. In one embodiment, a single crystal of electronic grade diamond is produced having a thickness of approximately 100-1000 microns and an area of substantially greater than 1 cm..sup.2. and having a high crystalline perfection which can be used in electronic, optical, mechanical and other applications. A single crystalline diamond layer is first deposited onto a master seed crystal and the resulting diamond layers can be separated from the seed crystal by physical, mechanical and chemical means. The original master seed can be restored by epitaxial growth for repetitive use as seed crystal in subsequent operations. Large master single crystal diamond seed can be generated by a combination of oriented smaller seed crystals by lateral epitaxial fusion. Since there is no limit to how many times seed combination step can be repeated, large diamond freestanding wafers comparable in size to silicon wafers can be manufactured.
摘要翻译：公开了用于生产大型单晶的方法。在一个实施例中，制造了具有大约100-1000微米的厚度和基本上大于1cm 2的面积的电子级金刚石的单晶。并且具有可用于电子，光学，机械和其它应用的高结晶完美性。首先将单晶金刚石层沉积到母晶种上，并且通过物理，机械和化学方法将所得金刚石层与晶种分离。可以通过外延生长恢复原始的主种子，以便在随后的操作中重复使用作为晶种。大型单晶金刚石种子可以通过横向外延融合的取向较小晶种的组合产生。由于可以重复种子组合步骤多少次的限制，因此可以制造尺寸相当于硅晶片的大型金刚石独立晶片。

2. 发明授权

US5753038A Method for the growth of industrial crystals 失效
标题翻译：工业晶体生长方法
公开(公告)号：US5753038A
公开(公告)日：1998-05-19
申请号：US821484
申请日：1997-03-21
申请人： Miroslav Vichr , David Samuel Hoover
发明人： Miroslav Vichr , David Samuel Hoover
IPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B25/20 , C30B29/04 , C30B33/08 , H01L21/205 , H01L21/314 , C30B25/06
CPC分类号： C30B25/02 , C30B25/18 , C30B25/20 , C30B29/36 , C30B29/40 , C30B29/403
摘要： A method is disclosed for producing large single crystals. According to the initial steps of this method, a plurality of single crystal wafers are crystallographically oriented to form a seed plate which is patterned. The patterned seed plate is selectively etched to expose the bare surface of the seed plate. The exposed, patterned bare surface of the seed plate is etched to form a plurality of nucleation structures. Each of the nucleation structures protrude outwardly from the underlying surface of the seed plate and provide ideal structures for the growth of large, single crystals. The resulting large, single crystals can be separated from the seed crystals by etching, physical or chemical means.
摘要翻译：公开了用于生产大型单晶的方法。根据该方法的初始步骤，多个单晶晶片被晶体取向以形成图案化的种子板。选择性地蚀刻图案化种子板以暴露种子板的裸露表面。蚀刻种子板的暴露的，图案化的裸露表面以形成多个成核结构。每个成核结构从种子板的下面的表面向外突出，并提供用于生长大的单晶的理想结构。通过蚀刻，物理或化学方法，可以将生成的大的单晶与晶种分离。

3. 发明授权

US5614019A Method for the growth of industrial crystals 失效
标题翻译：工业晶体生长方法
公开(公告)号：US5614019A
公开(公告)日：1997-03-25
申请号：US454775
申请日：1995-05-31
申请人： Miroslav Vichr , David S. Hoover
发明人： Miroslav Vichr , David S. Hoover
IPC分类号： C30B25/02 , C30B25/04 , C30B25/18 , C30B25/20 , C30B29/04 , C30B33/08 , H01L21/205 , H01L21/314 , C30B25/06
CPC分类号： C30B25/02 , C30B25/18 , C30B25/20 , C30B29/36 , C30B29/40 , C30B29/403
摘要： A method is disclosed for producing large single crystals. According to the initial steps of this method, a plurality of single crystal wafers are crystallographically oriented to form a seed plate which is patterned. The patterned seed plate is selectively etched to expose the bare surface of the seed plate. The exposed, patterned bare surface of the seed plate is etched to form a plurality of nucleation structures. Each of the nucleation structures protrude outwardly from the underlying surface of the seed plate and provide ideal structures for the growth of large, single crystals. The resulting large, single crystals can be separated from the seed crystals by etching, physical or chemical means.
摘要翻译：公开了用于生产大型单晶的方法。根据该方法的初始步骤，多个单晶晶片被晶体取向以形成图案化的种子板。选择性地蚀刻图案化种子板以暴露种子板的裸露表面。蚀刻种子板的暴露的，图案化的裸露表面以形成多个成核结构。每个成核结构从种子板的下面的表面向外突出，并提供用于生长大的单晶的理想结构。所得到的大的单晶可以通过蚀刻，物理或化学方法与晶种分离。

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