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    • 1. 发明授权
    • Active pad patterns for gate alignment marks
    • 栅极对准标记的主动焊盘图案
    • US08956946B2
    • 2015-02-17
    • US13721611
    • 2012-12-20
    • Ming Hao TangMichael HsiehFrank Kahlenberg
    • Ming Hao TangMichael HsiehFrank Kahlenberg
    • H01L23/544G03F9/00
    • H01L23/544G03F9/7073G03F9/7084H01L2924/0002H01L2924/00
    • Methods for forming RX pads having gate alignment marks configured to enable noise reduction between layers while resulting in little or no non-uniformity of CMP processes for the IC, and the resulting devices, are disclosed. Embodiments include: providing, on a substrate, a RX pad having a SPM with a SPM horizontal and vertical positions at horizontal and vertical midpoints, respectively, of the first RX pad; providing a second RX pad abutting the first RX pad and a first STI pad abutting the second RX pad, each having a vertical midpoint at the SPM vertical position; forming a first gate alignment mark on the second RX pad and having vertical endpoints horizontally aligned with vertical endpoints of the second RX pad; and forming a second gate alignment mark on the first STI pad and having vertical endpoints horizontally aligned with vertical endpoints of the first STI pad.
    • 用于形成具有栅极对准标记的RX焊盘的方法,其被配置为使得能够降低层之间的噪声,同时导致IC的CMP工艺和所得到的器件几乎不或不均匀。 实施例包括:在衬底上分别在第一RX垫的水平和垂直中点处提供具有SPM的SPM水平和垂直位置的RX垫的RX垫; 提供邻接所述第一RX垫的第二RX垫和邻接所述第二RX垫的第一STI垫,每个具有在所述SPM垂直位置处的垂直中点; 在所述第二RX焊盘上形成第一栅极对准标记,并且具有与所述第二RX焊盘的垂直端点水平对准的垂直端点; 以及在所述第一STI焊盘上形成第二栅极对准标记,并且具有与所述第一STI焊盘的垂直端点水平对准的垂直端点。