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1. 发明授权

US08357969B2 Semiconductor device having vertical channel transistor and manufacturing method of the same 有权
标题翻译：具有垂直沟道晶体管的半导体器件及其制造方法
公开(公告)号：US08357969B2
公开(公告)日：2013-01-22
申请号：US12495719
申请日：2009-06-30
申请人： Min Chul Sung
发明人： Min Chul Sung
IPC分类号： H01L29/78
CPC分类号： H01L29/66666 , H01L29/7827
摘要： A semiconductor device having a vertical channel transistor and a method for manufacturing the same are provided. In the semiconductor device, a metal bit line is formed between vertical channel transistors, and the metal bit line is connected to only one of the vertical channel transistors through an asymmetric bit line contact. Through such a structure, the resistance of the bit line can be improved and the process margin for formation of the bit line can be secured.
摘要翻译：提供一种具有垂直沟道晶体管的半导体器件及其制造方法。在半导体器件中，在垂直沟道晶体管之间形成金属位线，并且金属位线仅通过不对称位线接触连接到垂直沟道晶体管中的一个。通过这样的结构，可以提高位线的电阻，并且可以确保形成位线的工艺余量。

2. 发明申请

US20100301407A1 SEMICONDUCTOR DEVICE HAVING VERTICAL CHANNEL TRANSISTOR AND MANUFACTURING METHOD OF THE SAME 有权
标题翻译：具有垂直通道晶体管的半导体器件及其制造方法
公开(公告)号：US20100301407A1
公开(公告)日：2010-12-02
申请号：US12495719
申请日：2009-06-30
申请人： Min Chul SUNG
发明人： Min Chul SUNG
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/66666 , H01L29/7827
摘要： A semiconductor device having a vertical channel transistor and a method for manufacturing the same are provided. In the semiconductor device, a metal bit line is formed between vertical channel transistors, and the metal bit line is connected to only one of the vertical channel transistors through an asymmetric bit line contact. Through such a structure, the resistance of the bit line can be improved and the process margin for formation of the bit line can be secured.
摘要翻译：提供一种具有垂直沟道晶体管的半导体器件及其制造方法。在半导体器件中，在垂直沟道晶体管之间形成金属位线，并且金属位线仅通过不对称位线接触连接到垂直沟道晶体管中的一个。通过这样的结构，可以提高位线的电阻，并且可以确保形成位线的工艺余量。

3. 发明授权

US07500899B2 Artificial marble using multicolor chip and method for preparing the same 失效
标题翻译：使用多色芯片的人造大理石及其制备方法
公开(公告)号：US07500899B2
公开(公告)日：2009-03-10
申请号：US11263294
申请日：2005-10-31
申请人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
发明人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
IPC分类号： A63H33/22 , A63H33/00
CPC分类号： B28B1/004 , B28B1/005 , B28B1/008 , C04B26/06 , C04B2111/545 , C04B2111/82 , C04B14/28 , C04B14/303 , C04B2103/54
摘要： Disclosed herein are an artificial marble using multicolor chips, particularly striped chips, and a method for preparing the artificial marble. Since the artificial marble comprises multicolor chips in a new form together with conventional single-color chips, it enables achievement of various appearances, including designs and colors, thereby being highly differentiated from conventional artificial marbles containing combinations of single-color chips as well as displaying patterns and designs closely resembling natural granite.
摘要翻译：本文公开了使用多色芯片，特别是条纹芯片的人造大理石和制备人造大理石的方法。由于人造大理石由传统单色芯片组成的新型多色芯片组成，所以能够实现包括设计和颜色在内的各种外观，从而与包含单色芯片组合的常规人造大理石高度差异化，以及显示图案和设计与天然花岗岩非常相似。

4. 发明申请

US20060217033A1 Artificial marble using multicolor chip and method for preparing the same 失效
公开(公告)号：US20060217033A1
公开(公告)日：2006-09-28
申请号：US11263294
申请日：2005-10-31
申请人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
发明人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
IPC分类号： A63H17/00
CPC分类号： B28B1/004 , B28B1/005 , B28B1/008 , C04B26/06 , C04B2111/545 , C04B2111/82 , C04B14/28 , C04B14/303 , C04B2103/54
摘要： Disclosed herein are an artificial marble using multicolor chips, particularly striped chips, and a method for preparing the artificial marble. Since the artificial marble comprises multicolor chips in a new form together with conventional single-color chips, it enables achievement of various appearances, including designs and colors, thereby being highly differentiated from conventional artificial marbles containing combinations of single-color chips as well as displaying patterns and designs closely resembling natural granite.

5. 发明授权

US07935281B2 Artificial marble using multicolor chip and method for preparing the same 失效
标题翻译：使用多色芯片的人造大理石及其制备方法
公开(公告)号：US07935281B2
公开(公告)日：2011-05-03
申请号：US12209933
申请日：2008-09-12
申请人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
发明人： Min-Chul Sung , Bong-Hyun Kwon , Jae-Ho Oh , Won-Gu Choi , Jong-Cheol Lee
IPC分类号： B29C44/22
CPC分类号： B28B1/004 , B28B1/005 , B28B1/008 , C04B26/06 , C04B2111/545 , C04B2111/82 , C04B14/28 , C04B14/303 , C04B2103/54
摘要： Disclosed herein are an artificial marble using multicolor chips, particularly striped chips, and a method for preparing the artificial marble. Since the artificial marble comprises multicolor chips in a new form together with conventional single-color chips, it enables achievement of various appearances, including designs and colors, thereby being highly differentiated from conventional artificial marbles containing combination of single-color chips as well as displaying patterns and designs closely resembling natural granite.
摘要翻译：本文公开了使用多色芯片，特别是条纹芯片的人造大理石和制备人造大理石的方法。由于人造大理石由传统单色芯片组成的新型多色芯片组成，所以能够实现包括设计和颜色在内的各种外观，从而与包含单色芯片的组合的常规人造大理石高度差异，以及显示图案和设计与天然花岗岩非常相似。

6. 发明申请

US20100029839A1 ARTIFICIAL MARBLE AND PREPARATION PROCESS THEREOF 失效
标题翻译：人造大理石及其制备工艺
公开(公告)号：US20100029839A1
公开(公告)日：2010-02-04
申请号：US12522595
申请日：2008-01-08
申请人： Min Chul SUNG
发明人： Min Chul SUNG
IPC分类号： C08L31/02 , C08L63/00 , B05D1/02 , B05D3/12
CPC分类号： C04B26/06 , B29C67/242 , B44F9/04 , C04B26/14 , C04B26/18 , C04B2111/545 , C08J3/20 , C08J5/00 , C04B7/32 , C04B14/303 , C04B14/304 , C04B20/1029 , C04B20/1051 , C04B41/53 , C04B2103/54
摘要： The present invention relates to an artificial marble comprising a base resin part; and a pearl stripe part which contains a matrix resin and pearls, and expresses stripes on said base resin part by the contained pearls and a process for preparing the same. The present invention may provide an artificial marble, which can embody higher grade appearance effects by concentrating pearl into the parts expressing stripes of the artificial marble and freely regulating color, quality of pearl and/or patterns of stripes, and a process for preparing the same.
摘要翻译：本发明涉及包含基础树脂部分的人造大理石; 以及包含基质树脂和珍珠的珍珠条纹部分，并且通过所含珍珠在所述基础树脂部分上表现条纹及其制备方法。本发明可以提供一种人造大理石，其可以通过将珍珠浓缩到表示人造大理石条纹的部分中并且自由调节颜色，珍珠和/或条纹图案的质量以及其制备方法来体现更高等级的外观效果。

7. 发明申请

US20090045540A1 ARTIFICIAL MARBLE USING MULTICOLOR CHIP AND METHOD FOR PREPARING THE SAME 失效
标题翻译：使用多芯片芯片的人造大理石及其制备方法
公开(公告)号：US20090045540A1
公开(公告)日：2009-02-19
申请号：US12209933
申请日：2008-09-12
申请人： Min-Chul SUNG , Bong-Hyun KWON , Jae-Ho OH , Won-Gu CHOI , Jong-Cheol LEE
发明人： Min-Chul SUNG , Bong-Hyun KWON , Jae-Ho OH , Won-Gu CHOI , Jong-Cheol LEE
IPC分类号： B29C41/22
CPC分类号： B28B1/004 , B28B1/005 , B28B1/008 , C04B26/06 , C04B2111/545 , C04B2111/82 , C04B14/28 , C04B14/303 , C04B2103/54
摘要： Disclosed herein are an artificial marble using multicolor chips, particularly striped chips, and a method for preparing the artificial marble. Since the artificial marble comprises multicolor chips in a new form together with conventional single-color chips, it enables achievement of various appearances, including designs and colors, thereby being highly differentiated from conventional artificial marbles containing combinations of single-color chips as well as displaying patterns and designs closely resembling natural granite.
摘要翻译：本文公开了使用多色芯片，特别是条纹芯片的人造大理石和制备人造大理石的方法。由于人造大理石由传统单色芯片组成的新型多色芯片组成，所以能够实现包括设计和颜色在内的各种外观，从而与包含单色芯片组合的常规人造大理石高度差异化，以及显示图案和设计与天然花岗岩非常相似。

8. 发明申请

US20110186970A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20110186970A1
公开(公告)日：2011-08-04
申请号：US12840184
申请日：2010-07-20
申请人： Min Chul SUNG
发明人： Min Chul SUNG
IPC分类号： H01L21/3105 , H01L23/28
CPC分类号： H01L21/3105 , H01L23/28 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device comprises: etching a semiconductor substrate to form a plurality of pillars; depositing a first protective film on the sidewalls of the pillar; first etching the semiconductor substrate with the pillar deposited with the first protective film as a mask; forming a first insulating film on the sidewalls of the pillar and the first etched semiconductor substrate; second etching the semiconductor substrate with the pillar including the first insulating film as a mask; forming a second protective film and a second insulating film on the surface of the second etched semiconductor substrate; depositing a barrier film on the sidewalls of the pillar including the second insulating film; and removing the first insulating film, the second insulating film and the barrier film disposed at one sidewall of the pillar to form a contact hole defined by the first protective film and the second protective film.
摘要翻译：一种制造半导体器件的方法包括：蚀刻半导体衬底以形成多个柱; 在所述柱的侧壁上沉积第一保护膜; 首先用沉积有第一保护膜的柱作为掩模蚀刻半导体衬底; 在所述柱和所述第一蚀刻半导体衬底的侧壁上形成第一绝缘膜; 用包括第一绝缘膜的柱作为掩模来第二蚀刻半导体衬底; 在所述第二蚀刻半导体衬底的表面上形成第二保护膜和第二绝缘膜; 在包括第二绝缘膜的柱的侧壁上沉积阻挡膜; 以及去除第一绝缘膜，第二绝缘膜和设置在柱的一个侧壁处的阻挡膜，以形成由第一保护膜和第二保护膜限定的接触孔。

9. 发明申请

US20060036010A1 Resin composition comprising styrene-methylmethacrylate copolymer, artificial marble produced using the same, and the process for producing the artificial marble using the same 审中-公开
标题翻译：包含苯乙烯 - 甲基丙烯酸甲酯共聚物，使用其制造的人造大理石的树脂组合物以及使用其制造人造大理石的方法
公开(公告)号：US20060036010A1
公开(公告)日：2006-02-16
申请号：US11087480
申请日：2005-03-23
申请人： Hang-Young Kim , Min-Chul Sung
发明人： Hang-Young Kim , Min-Chul Sung
IPC分类号： C04B26/06
CPC分类号： C04B26/04 , C04B2103/0046 , C04B2111/542 , C04B7/32 , C04B14/303 , C04B14/304 , C04B20/008 , C04B20/0016 , C04B24/2641 , C04B2103/50 , C04B2103/54 , C04B2103/608 , C04B2103/63 , C04B20/1025 , C04B2103/605
摘要： Provided are a resin composition, comprising 100 parts by weight of a styrene-methylmethacrylate resin solution containing a styrene-methylmethacrylate copolymer and at least one of styrene and methylmethacrylate; 100 to 200 parts by weight of an inorganic filler; and 0.5 to 10 parts by weight of a cross-linkable monomer; and an artificial marble prepared using the same and a process for preparing the same. The resin composition can provide an artificial marble having improved transparency due to reduction of refractive index difference between aluminum hydroxide and methylmethacrylate while maintaining excellent weatherability and thermal characteristics possessed by a conventional acrylic polymer.
摘要翻译：提供一种树脂组合物，其包含100重量份含苯乙烯 - 甲基丙烯酸甲酯共聚物和苯乙烯和甲基丙烯酸甲酯中的至少一种的苯乙烯 - 甲基丙烯酸甲酯树脂溶液; 100〜200重量份的无机填料; 和0.5〜10重量份的可交联单体; 和使用其制备的人造大理石及其制备方法。树脂组合物可以提供由于氢氧化铝和甲基丙烯酸甲酯之间的折射率差的降低而具有改善的透明度的人造大理石，同时保持了常规丙烯酸类聚合物具有的优异的耐候性和热特性。

10. 发明授权

US08766333B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08766333B2
公开(公告)日：2014-07-01
申请号：US13326280
申请日：2011-12-14
申请人： Min Chul Sung
发明人： Min Chul Sung
IPC分类号： H01L29/76 , H01L27/108
CPC分类号： H01L29/7827 , H01L27/10876 , H01L27/10885 , H01L29/1087 , H01L29/1095 , H01L29/66666
摘要： A semiconductor device includes a first buried bit line (120a) provided between lower and upper substrates (100b, 100a), first and second pillar patterns (105a, 105b) extending from the upper substrate (100a) and coupled to the first buried bit line (120a) through first and second gate patterns (140a), respectively. A first body contact pattern (160a) coupled to the first and/or the second pillar patterns (105a, 105b) through the upper substrate (100a) prevents the first and the second pillar patterns from floating.
摘要翻译：半导体器件包括设置在下基板和上基板之间的第一掩埋位线（120a），从上基板（100a）延伸的第一和第二柱状图案（105a，105b），并且耦合到第一掩埋位线（120a）分别通过第一和第二栅极图案（140a）。通过上基板（100a）耦合到第一和/或第二柱状图案（105a，105b）的第一体接触图案（160a）防止第一和第二柱图案浮动。

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