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1. 发明授权

US08630120B2 Compact sense amplifier for non-volatile memory 有权
标题翻译：用于非易失性存储器的紧凑型读出放大器
公开(公告)号：US08630120B2
公开(公告)日：2014-01-14
申请号：US13277915
申请日：2011-10-20
申请人： Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
发明人： Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C16/06 , G11C16/3418
摘要： A compact and versatile sense amp is presented. Among its other features this sense amp arrangement provides a way to pre-charge bit lines while doing data scanning. Another feature is that the sense amp circuit can provide a way to set three different bit line levels used in the quick pass write (QPW) technique using dynamic latch, where quick pass write is a technique where cells along a given word line selected for programming can be enabled, inhibited, or partially inhibited for programming. Also, it can provide a convenient way to measure the cell current.
摘要翻译：提出了一种紧凑且通用的感应放大器。在其他功能中，这种感测放大器布置提供了一种在进行数据扫描时对位线进行预充电的方法。另一个特征是，感测放大器电路可以提供一种使用动态锁存器来设置快速写入（QPW）技术中使用的三个不同位线电平的方法，其中快速写入是一种技术，其中沿着给定字线的单元格被选择用于编程可以启用，禁止或部分禁止编程。此外，它可以提供一种方便的方式来测量电池电流。

2. 发明申请

US20130100740A1 Compact Sense Amplifier for Non-Volatile Memory Suitable for Quick Pass Write 有权
标题翻译：用于非易失性存储器的紧凑型检测放大器，适用于快速通过写入
公开(公告)号：US20130100740A1
公开(公告)日：2013-04-25
申请号：US13277966
申请日：2011-10-20
申请人： Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
发明人： Min She , Yan Li , Kwang-Ho Kim , Siu Lung Chan
IPC分类号： G11C16/10
CPC分类号： G11C16/0483 , G11C16/06 , G11C16/26 , G11C16/28
摘要： A compact and versatile sense amp is presented. Among its other features this sense amp arrangement provides a way to pre-charge bit lines while doing data scanning. Another feature is that the sense amp circuit can provide a way to set three different bit line levels used in the quick pass write (QPW) technique using dynamic latch, where quick pass write is a technique where cells along a given word line selected for programming can be enabled, inhibited, or partially inhibited for programming. Also, it can provide a convenient way to measure the cell current.
摘要翻译：提出了一种紧凑且通用的感应放大器。在其他功能中，这种感测放大器布置提供了一种在进行数据扫描时对位线进行预充电的方法。另一个特征是，感测放大器电路可以提供一种使用动态锁存器来设置快速写入（QPW）技术中使用的三个不同位线电平的方法，其中快速写入是一种技术，其中沿着给定字线的单元格被选择用于编程可以启用，禁止或部分禁止编程。此外，它可以提供一种方便的方式来测量电池电流。

3. 发明授权

US08278689B1 Memory and interconnect design in fine pitch 有权
标题翻译：存储器和互连设计在细微间距
公开(公告)号：US08278689B1
公开(公告)日：2012-10-02
申请号：US13236312
申请日：2011-09-19
申请人： Qiang Tang , Min She , Ken Liao
发明人： Qiang Tang , Min She , Ken Liao
IPC分类号： H01L23/52
CPC分类号： H01L23/522 , H01L27/105 , H01L27/10882 , H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： A memory array including a diffusion layer, a poly layer, a metal one layer, a metal two layer, and a contact. The diffusion layer comprises diffusion lines extending in a first direction. The poly layer comprises poly lines extending in the first direction and being arranged on top of and insulated from the diffusion layer. The metal one layer comprises metal one lines extending in the first direction and being arranged on top of and insulated from the poly layer. The metal two layer comprises a metal two line extending in the first direction and being arranged on top of and insulated from the metal one layer. The contact extends through the poly layer, and connects a metal one line to a diffusion line. A poly line further extends in a second direction to bend around the contact such that a predetermined distance separates the poly lines from the contact.
摘要翻译：包括扩散层，多层，金属一层，金属二层和接触的存储器阵列。扩散层包括沿第一方向延伸的扩散线。多层包括在第一方向上延伸并且布置在扩散层的顶部并且与扩散层绝缘的多条线。金属一层包括在第一方向上延伸并且布置在多层之上并与多层绝缘的金属线。金属二层包括在第一方向上延伸并且布置在金属一层的顶部并与其绝缘的金属两条线。触点延伸穿过多层，并将金属线连接到扩散线。多线在第二方向上进一步延伸以围绕接触弯曲，使得预定距离将多线与接触分开。

4. 发明授权

US08022443B1 Memory and interconnect design in fine pitch 有权
标题翻译：存储器和互连设计在细微间距
公开(公告)号：US08022443B1
公开(公告)日：2011-09-20
申请号：US12328369
申请日：2008-12-04
申请人： Qiang Tang , Min She , Ken Liao
发明人： Qiang Tang , Min She , Ken Liao
IPC分类号： H01L23/52
CPC分类号： H01L23/522 , H01L27/105 , H01L27/10882 , H01L27/11803 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit includes a plurality of signal lines. A first signal line layer includes a plurality of first signal lines. A second signal line layer includes a plurality of second signal lines arranged on top of and insulated from the first signal line layer. A third signal line layer includes a plurality of third signal lines arranged on top of and insulated from the second signal line layer. A contact extends through the second signal line layer and connects at least one of the plurality of third signal lines to at least one of the first signal lines. At least one of the second signal lines further extends in a second direction to bend around the contact such that a predetermined distance separates the plurality of second signal lines from the contact.
摘要翻译：集成电路包括多条信号线。第一信号线层包括多条第一信号线。第二信号线层包括布置在第一信号线层之上并与第一信号线层绝缘的多个第二信号线。第三信号线层包括布置在第二信号线层之上并与第二信号线层绝缘的多个第三信号线。接触件延伸穿过第二信号线层，并将多个第三信号线中的至少一个连接到第一信号线中的至少一个。第二信号线中的至少一个进一步沿第二方向延伸以围绕触点弯曲，使得预定距离将多个第二信号线与触点隔开。

5. 外观设计

USD638932S1 Slide key clamp 有权
标题翻译：滑动钥匙夹
公开(公告)号：USD638932S1
公开(公告)日：2011-05-31
申请号：US29316834
申请日：2009-11-05
申请人： Li Min She , Joel K. Faulkner
设计人： Li Min She , Joel K. Faulkner

6. 发明申请

US20100258340A1 Composite material and high-frequency circuit substrate made therefrom 有权
标题翻译：复合材料和由其制成的高频电路基板
公开(公告)号：US20100258340A1
公开(公告)日：2010-10-14
申请号：US12584596
申请日：2009-09-09
申请人： Min She Su
发明人： Min She Su
IPC分类号： H05K1/09 , B32B5/02 , B32B27/04 , B32B17/02
CPC分类号： C08J5/24 , C08J5/043 , C08J2309/06 , H05K1/024 , H05K1/0353 , H05K1/0366 , H05K2201/012 , H05K2201/0158 , H05K2201/0209 , H05K2201/029 , Y10T442/2672 , Y10T442/2713 , Y10T442/2934
摘要： The invention relates to a composite material and a high-frequency circuit substrate made from the composite material. The composite material includes: a thermosetting composition in an amount of 20 to 70 by weight with respect to the composite material, a fiberglass cloth processed by coupling agent; a powder filler; a fire retardant and a cure initiator. The thermosetting composition includes a resin with molecular weight thereof being less than 11,000, and a low-molecular-weight solid allyl resin. The resin is composed of carbon and hydrogen element. More than 60 percent of the resin is vinyl. The high-frequency circuit substrate made from the composite material comprises: a plurality of prepregs mutually overlapped and copper foils respectively covered on both sides of overlapped prepregs, wherein each prepreg is made from the composite material. The composite material of the present invention realizes easy manufacture of the prepreg and high bonding of the copper foil. The high-frequency circuit substrate made from the composite material has low dielectric constant, low dielectric loss tangent, and excellent heat resistance, and is convenient for process operation. Therefore, the composite material is suitable for making the circuit substrate.
摘要翻译：本发明涉及由复合材料制成的复合材料和高频电路基板。复合材料包括：相对于复合材料为20〜70重量％的热固性组合物，由偶联剂处理的玻璃纤维布; 粉末填料; 阻燃剂和固化引发剂。热固性组合物包括分子量小于11,000的树脂和低分子量固体烯丙基树脂。树脂由碳和氢元素组成。超过60％的树脂是乙烯基树脂。由复合材料制成的高频电路基板包括：相互重叠的多个预浸料和分别覆盖在重叠的预浸料的两侧的铜箔，其中每个预浸料由复合材料制成。本发明的复合材料实现了预浸料的容易制造和铜箔的高粘合性。由复合材料制成的高频电路基板具有低介电常数，低介电损耗角正切，耐热性优异，方便操作。因此，复合材料适合于制造电路基板。

7. 发明授权

US08269115B2 Composite material and high-frequency circuit substrate made therefrom 有权
标题翻译：复合材料和由其制成的高频电路基板
公开(公告)号：US08269115B2
公开(公告)日：2012-09-18
申请号：US12584596
申请日：2009-09-09
申请人： Min She Su
发明人： Min She Su
IPC分类号： H05K1/09
CPC分类号： C08J5/24 , C08J5/043 , C08J2309/06 , H05K1/024 , H05K1/0353 , H05K1/0366 , H05K2201/012 , H05K2201/0158 , H05K2201/0209 , H05K2201/029 , Y10T442/2672 , Y10T442/2713 , Y10T442/2934
摘要： The invention relates to a composite material and a high-frequency circuit substrate made from the composite material. The composite material includes: a thermosetting composition in an amount of 20 to 70 by weight with respect to the composite material, a fiberglass cloth processed by a coupling agent; a powder filler; a fire retardant and a cure initiator. The thermosetting composition includes a resin with molecular weight thereof being less than 11,000, and a low-molecular-weight solid allyl resin. The resin is composed of carbon and hydrogen elements. More than 60 percent of the resin is vinyl. The high-frequency circuit substrate made from the composite material comprises: a plurality of prepregs mutually overlapped and copper foils covered on both sides of overlapped prepregs, wherein each prepeg is made from the composite material.
摘要翻译：本发明涉及由复合材料制成的复合材料和高频电路基板。复合材料包括：相对于复合材料为20〜70重量％的热固性组合物，由偶联剂处理的玻璃纤维布; 粉末填料; 阻燃剂和固化引发剂。热固性组合物包括分子量小于11,000的树脂和低分子量固体烯丙基树脂。树脂由碳和氢元素组成。超过60％的树脂是乙烯基树脂。由复合材料制成的高频电路基板包括：相互重叠的多个预浸料和覆盖在重叠的预浸料的两侧的铜箔，其中每个预成型件由复合材料制成。

8. 发明授权

US08120088B1 Non-volatile memory cell and array 有权
标题翻译：非易失性存储单元和阵列
公开(公告)号：US08120088B1
公开(公告)日：2012-02-21
申请号：US12105988
申请日：2008-04-18
申请人： Min She , Chih-Hsin Wang
发明人： Min She , Chih-Hsin Wang
IPC分类号： H01L29/76
CPC分类号： H01L21/28273 , H01L21/28282 , H01L27/11521 , H01L27/11568 , H01L29/42328 , H01L29/42344 , H01L29/66825 , H01L29/66833 , H01L29/7881 , H01L29/792
摘要： Memory cells and arrays have reduced bit line resistance. An element conductor is disposed on the top of the bit line to reduce the resistance of the bit line while maintaining a shallow bit line junction so that 200 Ohm/square or lower sheet resistances are achieved with the bit line junctions typically 20 nanometers or shallower while the doping levels in the junctions are below about 5×1019 atoms/cm3.
摘要翻译：存储单元和阵列降低了位线电阻。元件导体设置在位线的顶部以减小位线的电阻，同时保持浅位线结，使得通过20位或更浅的位线结实现200欧姆/平方或更小的薄层电阻，同时结中的掺杂水平低于约5×1019原子/ cm3。

9. 发明申请

US20110045304A1 COMPOSITE MATERIAL, HIGH-FREQUENCY CIRCUIT SUBSTRATE MADE THEREFROM AND MAKING METHOD THEREOF 有权
标题翻译：复合材料，高频电路基板及其制作方法
公开(公告)号：US20110045304A1
公开(公告)日：2011-02-24
申请号：US12694948
申请日：2010-01-27
申请人： MIN SHE SU
发明人： MIN SHE SU
IPC分类号： B32B27/18 , C09J5/02 , B32B17/10
CPC分类号： C08J5/24 , C08F212/08 , C08F212/14 , C08F212/34 , C08J2309/00 , C08J2309/06 , C08J2325/18 , C08J2353/02 , C08K3/013 , C08K3/40 , C08K5/0066 , C08K5/14 , C08K7/14 , C08L9/06 , C08L25/18 , H05K1/032 , H05K1/0366 , H05K1/0373 , H05K2201/012 , H05K2201/0158 , H05K2201/0209 , Y10T428/31533 , Y10T428/31544 , Y10T428/31547 , Y10T428/31645 , Y10T442/2992 , C08L2666/06 , C08L2666/04
摘要： The present invention relates to a composite material, a high-frequency circuit substrate made therefrom and making method thereof. The composite material comprises 20-70 parts by weight of thermosetting mixture, a fiberglass cloth, a powder filler, a flame retardant, and a cure initiator. The thermosetting mixture includes a resin containing vinyl in the amount of more than 60% composed of carbon and hydrogen with its molecular weight being less than 11000, and a solid styryl resin of middle or low molecular weight with unsaturated double bonds. The made high-frequency circuit substrate comprises a plurality of prepregs mutually overlapped, and copper foils respectively covered on both sides of overlapped prepregs. Each prepreg is made from the composite material. The composite material of the present invention enable to readily make prepregs. The high-frequency circuit substrate made from the composite material has low dielectric constant, low dielectric loss tangent, and good heat resistance, and is convenient for process operation. Therefore, the composite material of the present invention is suitable for making circuit substrates of high-frequency electronic equipments.
摘要翻译：复合材料及其制造方法技术领域本发明涉及复合材料，由其制成的高频电路基板及其制造方法。复合材料包含20-70重量份的热固性混合物，玻璃纤维布，粉末填料，阻燃剂和固化引发剂。热固性混合物包括含有分子量小于11000的由碳和氢组成的含量超过60％的乙烯基树脂和具有不饱和双键的中等或低分子量的固体苯乙烯基树脂。制成的高频电路基板包括相互重叠的多个预浸料，分别覆盖在重叠的预浸料的两侧的铜箔。每个预浸料由复合材料制成。本发明的复合材料能够容易地制备预浸料。由复合材料制成的高频电路基板具有低介电常数，低介电损耗角正切和良好的耐热性，方便操作。因此，本发明的复合材料适用于制造高频电子设备的电路基板。

10. 发明申请

US20050167734A1 Flash memory devices using large electron affinity material for charge trapping 审中-公开
标题翻译：使用大电子亲和材料的闪存器件进行电荷俘获
公开(公告)号：US20050167734A1
公开(公告)日：2005-08-04
申请号：US10993602
申请日：2004-11-19
申请人： Min She , Tsu-Jae King
发明人： Min She , Tsu-Jae King
IPC分类号： H01L21/28 , H01L29/51 , H01L29/792 , H01L29/788
CPC分类号： H01L21/28202 , H01L21/28194 , H01L29/511 , H01L29/517 , H01L29/518 , H01L29/792
摘要： Disclosed is a novel flash memory device using a high-permittivity dielectric such as HfO2 or TiO2 as a charge trapping layer. Numerical simulation shows that the novel trapping material will enhance the retention time/programming speed ratio by 5 orders of magnitude, compared to the conventional Si3N4 trapping layer. Capacitors with HfO2 deposited by RTCVD as the charge trap/storage layer in SONOS-type flash memory devices were fabricated and characterized. Compared against devices with Si3N4 trapping layer, faster programming speed as well as good retention time is achieved with low programming voltage.
摘要翻译：公开了一种使用诸如HfO 2或TiO 2的高介电常数电介质的新型闪存器件作为电荷俘获层。数值模拟显示，与传统的三极管捕获层相比，新颖的捕获材料将保持时间/编程速度比提高5个数量级。制造和表征了由RTCVD沉积的具有HfO 2 2的电容器作为SONOS型闪存器件中的电荷捕获/存储层。与具有Si 3 N 4 N 3捕获层的器件相比，具有较低编程电压的更快的编程速度以及良好的保持时间。

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