会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method of manufacturing a semiconductor device, chemical solution to form fine pattern, and semiconductor device
    • 制造半导体器件的方法,形成精细图案的化学溶液和半导体器件
    • US06376157B1
    • 2002-04-23
    • US09539862
    • 2000-03-31
    • Mikihiro TanakaTakeo Ishibashi
    • Mikihiro TanakaTakeo Ishibashi
    • G03F740
    • G03F7/40
    • In a method of manufacturing a semiconductor device, a first resist pattern, which evolves an acid, is formed on a semiconductor substrate. The first resist pattern is treated with a chemical solution containing a crosslinking agent and a swelling promoter. The crosslinking agent is capable to bring about crosslinking in the presence of an acid at the surface layer of the first resist pattern. The crosslinking agent and swelling promoter in the chemical solution permeate into the surface layer of the first resist pattern, thereby swells the surface layer. The chemical solution is removed from the surface of the first resist pattern. The first resist pattern is caused to evolve an acid, by which a crosslinked film is formed in the swollen surface layer of the first resist pattern. Thus, a second resist pattern is formed, and the semiconductor substrate is etched through the second resist pattern as a mask. The resist pattern thus obtained has a fine feature which exceeds the limit of the wavelength of light for exposure.
    • 在制造半导体器件的方法中,在半导体衬底上形成放出酸的第一抗蚀剂图案。 第一抗蚀剂图案用含有交联剂和溶胀促进剂的化学溶液处理。 交联剂能够在第一抗蚀剂图案的表面层处的酸存在下进行交联。 化学溶液中的交联剂和溶胀促进剂渗透到第一抗蚀剂图案的表面层中,从而使表面层膨胀。 从第一抗蚀剂图案的表面去除化学溶液。 使第一抗蚀剂图案析出酸,由此在第一抗蚀剂图案的溶胀表面层中形成交联膜。 因此,形成第二抗蚀剂图案,并且通过第二抗蚀剂图案来蚀刻半导体衬底作为掩模。 由此获得的抗蚀剂图案具有超过用于曝光的光的波长的极限的微细特征。
    • 3. 发明授权
    • Method of manufacturing a semiconductor device having an improved fine structure
    • 具有改善的精细结构的半导体器件的制造方法
    • US06593063B1
    • 2003-07-15
    • US09514943
    • 2000-02-28
    • Mikihiro TanakaTakeo Ishibashi
    • Mikihiro TanakaTakeo Ishibashi
    • G03C500
    • G03F7/0035G03F7/40H01L21/0273H01L21/0274
    • A first resist layer, capable of generating an acid, is formed on a semiconductor base layer and is developed in a shortened developing time than usual. The first resist pattern is covered with a second resist layer containing a material capable of crosslinkage in the presence of an acid. The acid is generated in the first resist pattern by application of heat or by exposure to light, and a crosslinked layer is formed in the second resist pattern at the interface with the first resist pattern as a cover layer for the first resist pattern, thereby the first resist pattern is caused to be thickened. The non linked portion of the second resist layer is removed and the fine resist pattern is formed. Thus, the hole diameter of the resist pattern can be reduced, or the isolation width of a resist pattern can be reduced.
    • 在半导体基底层上形成能够产生酸的第一抗蚀剂层,并且以比通常缩短的显影时间显影。 第一抗蚀剂图案被包含能够在酸存在下能够交联的材料的第二抗蚀层覆盖。 在第一抗蚀剂图案中通过施加热或暴露于光而产生酸,并且在与第一抗蚀剂图案的界面处的第二抗蚀剂图案中形成交联层作为第一抗蚀剂图案的覆盖层,由此, 使第一抗蚀剂图案变厚。 去除第二抗蚀剂层的非连接部分并形成精细抗蚀剂图案。 因此,可以减小抗蚀剂图案的孔径,或者可以减小抗蚀剂图案的隔离宽度。