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1. 发明授权

US07679417B2 Attenuator with bias control circuit 失效
标题翻译：具有偏置控制电路的衰减器
公开(公告)号：US07679417B2
公开(公告)日：2010-03-16
申请号：US12170785
申请日：2008-07-10
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03L5/20
CPC分类号： H03H11/245
摘要： An attenuator includes one or more series attenuation branches including one or more series field effect transistors (FETs) each having a gate; one or more shunt attenuation branches including one or more shunt FETs each having a gate; and a bias control FET. The bias control FET receives at its gate a first bias control signal and in response thereto produces at one of its drain and source terminals a second bias control signal. Either the first bias control signal is coupled to the gates of one or more series FETs, and the second bias control signal is coupled to the gates of the one or more shunt FETs; or the first bias control signal is coupled to the gates of the one or more shunt FETs, and the second bias control signal is coupled to the gates of the one or more series FETs.
摘要翻译：衰减器包括一个或多个串联衰减分支，包括一个或多个串联场效应晶体管（FET），每个具有栅极; 一个或多个分流衰减分支，包括一个或多个分流FET，每个分流FET均具有栅极; 和偏置控制FET。偏置控制FET在其栅极处接收第一偏置控制信号，并且响应于此，在其漏极和源极端子之一处产生第二偏置控制信号。第一偏置控制信号耦合到一个或多个串联FET的栅极，并且第二偏置控制信号耦合到一个或多个并联FET的栅极; 或者第一偏置控制信号耦合到一个或多个并联FET的栅极，并且第二偏置控制信号耦合到一个或多个串联FET的栅极。

2. 发明授权

US07646231B2 System and method for controlling attenuator 失效
标题翻译：控制衰减器的系统和方法
公开(公告)号：US07646231B2
公开(公告)日：2010-01-12
申请号：US12029034
申请日：2008-02-11
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03L5/00
CPC分类号： H03G1/007
摘要： An apparatus for setting an attenuation of an attenuator includes a control transistor, which includes a drain connected to a gate of a shunt transistor of the attenuator. A channel resistance of the shunt transistor corresponds to a current density of the control transistor, and the channel resistance of the shunt transistor determines the attenuation of the attenuator. The current density of the control transistor is based at least in part on a control voltage input to the apparatus.
摘要翻译：用于设置衰减器的衰减的装置包括控制晶体管，其包括连接到衰减器的并联晶体管的栅极的漏极。分流晶体管的沟道电阻对应于控制晶体管的电流密度，并且分流晶体管的沟道电阻决定衰减器的衰减。控制晶体管的电流密度至少部分地基于输入到装置的控制电压。

3. 发明申请

US20090201091A1 SYSTEM AND METHOD FOR CONTROLLING ATTENUATOR 失效
标题翻译：控制衰减器的系统和方法
公开(公告)号：US20090201091A1
公开(公告)日：2009-08-13
申请号：US12029034
申请日：2008-02-11
申请人： Michael Wendell VICE
发明人： Michael Wendell VICE
IPC分类号： H03G3/30
CPC分类号： H03G1/007
摘要： An apparatus for setting an attenuation of an attenuator includes a control transistor, which includes a drain connected to a gate of a shunt transistor of the attenuator. A channel resistance of the shunt transistor corresponds to a current density of the control transistor, and the channel resistance of the shunt transistor determines the attenuation of the attenuator. The current density of the control transistor is based at least in part on a control voltage input to the apparatus.
摘要翻译：用于设置衰减器的衰减的装置包括控制晶体管，其包括连接到衰减器的并联晶体管的栅极的漏极。分流晶体管的沟道电阻对应于控制晶体管的电流密度，并且分流晶体管的沟道电阻决定衰减器的衰减。控制晶体管的电流密度至少部分地基于输入到装置的控制电压。

4. 发明申请

US20080079477A1 Attenuators with progressive biased field-effect transistors 审中-公开
标题翻译：具有逐行偏置场效应晶体管的衰减器
公开(公告)号：US20080079477A1
公开(公告)日：2008-04-03
申请号：US11541476
申请日：2006-09-29
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03K17/687
CPC分类号： H03G1/007 , H03H11/245
摘要： An electrical circuit having improved linearity includes a resistive circuit having a plurality of field effect transistors (FETs) and one or more gate biasing circuits.
摘要翻译：具有改进的线性度的电路包括具有多个场效应晶体管（FET）和一个或多个栅极偏置电路的电阻电路。

5. 发明授权

US6144236A Structure and method for super FET mixer having logic-gate generated FET square-wave switching signal 失效
标题翻译：具有逻辑门产生的FET方波切换信号的超级FET混合器的结构和方法
公开(公告)号：US6144236A
公开(公告)日：2000-11-07
申请号：US17455
申请日：1998-02-01
申请人： Michael Wendell Vice , Charles Edward Dexter
发明人： Michael Wendell Vice , Charles Edward Dexter
IPC分类号： H03D7/12 , H03D7/14 , H03D9/06 , H03B19/00
CPC分类号： H03D7/1441 , H03D7/1408 , H03D7/1433 , H03D7/1458 , H03D7/1466 , H03D2200/0023 , H03D2200/0088 , H03D7/125 , H03D9/0658
摘要： A mixing method and mixer structure provide a circuit topology suitable for use in radio receivers, transmitters, tuners, instrumentation systems, telemetry systems, and other systems and devices performing frequency conversion in either homodyne or heterodyne implementations. The inventive mixer may be used for wireless communication devices including radios, cellular telephones, and telemetry systems whether land, sea, airborne, or space based, and whether fixed or mobile. The mixer provides superior intermodulation and harmonic distortion suppression and features excellent conversion loss, noise figure, port match, and port isolation as a result of its circuit topology. The mixer device circuit combines the advantages of series mixing FETs, a triple balanced design using a balanced passive reflection transformer, a precise local oscillator phase splitter, and square wave gate drive having high slew rate signal characteristics to achieve high levels of performance. It is power conservative and offers the advantage of long battery life in portable devices such as portable radios and cellular telephones as it requires only a modest amount of DC and local oscillator drive power, and is useful for operation over at least a multi-decade bandwidth.
摘要翻译：混合方法和混频器结构提供适用于无线电接收机，发射机，调谐器，仪表系统，遥测系统以及在零差或外差实现中执行频率转换的其它系统和装置的电路拓扑。本发明的混频器可以用于包括无线电，蜂窝电话和遥测系统的无线通信设备，无论是陆地，海上，空中或空间，以及是固定的还是移动的。混频器由于其电路拓扑结构，提供卓越的互调和谐波失真抑制，并具有出色的转换损耗，噪声系数，端口匹配和端口隔离。混频器装置电路结合了串联混频FET的优点，采用平衡无源反射变压器的三重平衡设计，精确的本地振荡器分相器和具有高压摆率信号特性的方波栅极驱动，以实现高水平的性能。它是功率保守的，并且提供便携式设备（例如便携式无线电和蜂窝电话）具有长的电池寿命的优点，因为它仅需要适量的DC和本地振荡器驱动功率，并且对于在至少十十年的带宽。

6. 发明授权

US6064872A Totem pole mixer having grounded serially connected stacked FET pair 失效
标题翻译：具有串联连接的堆叠FET对的图腾极混合器
公开(公告)号：US6064872A
公开(公告)日：2000-05-16
申请号：US926175
申请日：1997-09-09
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03D7/12 , H03D7/14 , H04B1/26
CPC分类号： H03D7/1441 , H03D7/14 , H03D7/1433 , H03D7/1466 , H03D2200/0023 , H03D2200/0088
摘要： A high dynamic range mixer apparatus and mixing method where a wide high dynamic range is achieved in part due to the use of a series pair of switching devices that are matched so as to afford complete or substantial cancellation of nonlinearity distortion. The inventive structure and method preserves the compensation and cancellation mechanism of the series pair of back-to-back connected FETs without the need for either of an intermediate frequency (IF) balun or a radio-frequency (RF) balun. Typically, the switching devices are PETs, such as for example MESFETs, connected source-to-source with one drain terminal grounded, and a non-grounded or floating switching signal applied between the common gate and common source terminals.
摘要翻译：一种高动态范围混合装置和混合方法，其中部分由于使用串联的一对开关装置来实现宽的高动态范围，这些开关装置被匹配以便提供完全或大体上的非线性失真的消除。本发明的结构和方法保持了串联对背对连接的FET的补偿和消除机制，而不需要中频（IF）平衡 - 不平衡变压器（RF）或无线电频率（RF）平衡 - 不平衡转换器中的任何一个。通常，开关器件是PET，例如MESFET，源极至源极与一个漏极端子接地，以及施加在公共栅极和公共源极端子之间的非接地或浮置开关信号。

7. 发明授权

US08174313B2 Apparatus and method for controlling power amplifier 有权
标题翻译：功率放大器控制装置及方法
公开(公告)号：US08174313B2
公开(公告)日：2012-05-08
申请号：US12781221
申请日：2010-05-17
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03G3/20
CPC分类号： H03G3/3042 , H03F1/0233 , H03F1/52 , H03F3/195 , H03F2200/393 , H03F2200/507 , H03G3/007
摘要： An apparatus for controlling a power amplifier configured to amplify radio frequency (RF) signal includes a detector and a controller. The detector is configured to detect a power level of the RF signal with respect to a predetermined power threshold and to generate a corresponding detection signal. The controller is configured to provide a control voltage to an output transistor of the amplifier based on the detection signal. The control voltage has a low voltage value, which is substantially the same as a value of a supply voltage, when the detection signal indicates that the power level is below the power threshold, and the control voltage has a high voltage value when the detection signal indicates that the power level is above the power threshold. The controller generates the high voltage value by boosting the supply voltage.
摘要翻译：用于控制被配置为放大射频（RF）信号的功率放大器的装置包括检测器和控制器。检测器被配置为相对于预定功率阈值检测RF信号的功率电平并产生相应的检测信号。控制器被配置为基于检测信号向放大器的输出晶体管提供控制电压。当检测信号指示功率水平低于功率阈值时，控制电压具有与电源电压值基本相同的低电压值，并且当检测信号表示功率电平高于功率阈值。控制器通过提高电源电压来产生高电压值。

8. 发明申请

US20090189673A1 MIXER WITH BALANCED LOCAL OSCILLATOR SIGNAL 失效
标题翻译：混合器与平衡本地振荡器信号
公开(公告)号：US20090189673A1
公开(公告)日：2009-07-30
申请号：US12019100
申请日：2008-01-24
申请人： Michael Wendell VICE
发明人： Michael Wendell VICE
IPC分类号： H03D7/12 , G06G7/16 , H03H11/02
CPC分类号： H03D7/1441 , H03D2200/0023 , H03D2200/009
摘要： A mixer includes a first field effect transistor (FET) having a gate that receives a first signal of a balanced local oscillator (LO) signal, a first source/drain coupled to a ground voltage, and a second source/drain; and a second FET having a gate that receives a second signal of the balanced LO signal, a first source/drain that floats, and a second source/drain connected to the second source/drain of the first FET to form a mixing node, the second signal being out of phase with the first signal. A diplexer is connected between the mixing node and each of a radio frequency (RF) port and an intermediate frequency (IF) port. A first LO leakage caused by the first FET is substantially canceled by a second LO leakage caused by the second FET at the mixing node.
摘要翻译：混频器包括具有接收平衡本地振荡器（LO）信号的第一信号的栅极的第一场效应晶体管（FET），耦合到接地电压的第一源极/漏极和第二源极/漏极; 以及第二FET，其具有接收平衡LO信号的第二信号的栅极，浮置的第一源极/漏极以及连接到第一FET的第二源极/漏极以形成混合节点的第二源极/漏极，第二信号与第一信号异相。双工器连接在混合节点和射频（RF）端口和中频（IF）端口之间。由第一FET引起的第一LO泄漏基本上被混合节点处的第二FET引起的第二LO泄漏所抵消。

9. 发明申请

US20080079476A1 Gate load impedance networks for field effect transistor attenuators and mixers 审中-公开
标题翻译：用于场效应晶体管衰减器和混频器的栅极负载阻抗网络
公开(公告)号：US20080079476A1
公开(公告)日：2008-04-03
申请号：US11541475
申请日：2006-09-29
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H03G1/007 , H03H11/245 , H03K17/145
摘要： An electrical circuit having improved linearity across a desired attenuation range includes a shunt circuit having a first field effect transistor (FET) adapted to couple a first signal-carrying electrical node of the electrical circuit to a ground node
摘要翻译：具有在期望的衰减范围上具有改善的线性度的电路包括分流电路，其具有适于将电路的第一信号承载电节点耦合到接地节点的第一场效应晶体管（FET）

10. 发明授权

US06900711B2 Switching system 失效
标题翻译：开关系统
公开(公告)号：US06900711B2
公开(公告)日：2005-05-31
申请号：US10261711
申请日：2002-09-30
申请人： Michael Wendell Vice
发明人： Michael Wendell Vice
IPC分类号： H03K17/687 , H01P1/15 , H01P1/10
CPC分类号： H01P1/15
摘要： A switching system includes a first transistor having a first gate and coupled between a first terminal and a second terminal and a second transistor having a second gate and coupled between the second terminal and a third terminal. The first transistor and the second transistor are configured to conduct a signal current between the first terminal and the third terminal. An impedance component coupled to the first gate and the second gate is configured to isolate a first gate signal voltage at the first gate or isolate a second gate signal voltage at the second gate to reduce a distortion of the signal current.
摘要翻译：开关系统包括具有第一栅极并且耦合在第一端子和第二端子之间的第一晶体管和具有第二栅极并耦合在第二端子和第三端子之间的第二晶体管。第一晶体管和第二晶体管被配置为在第一端子和第三端子之间传导信号电流。耦合到第一栅极和第二栅极的阻抗分量被配置为隔离第一栅极处的第一栅极信号电压或隔离第二栅极处的第二栅极信号电压，以减小信号电流的失真。

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