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    • 1. 发明授权
    • Guide for transmyocardial implant
    • 经心肌植入指南
    • US6139541A
    • 2000-10-31
    • US145843
    • 1998-09-02
    • Guy P. VanneyMichael L. Krogh
    • Guy P. VanneyMichael L. Krogh
    • A61B17/00A61B17/34A61F2/02
    • A61B17/3403A61F2/2493A61B17/3468A61B2017/00247A61B2017/00252A61B2018/00392Y10S623/90
    • An apparatus controls a direction of formation of a hole through a myocardium for subsequent placement into the hole of a myocardial portion of a transmyocardial implant. The implant also includes a coronary portion having a coronary axis set at an implant angle to a myocardial axis of the myocardial portion. The apparatus includes a base member having base surface for placement against an epicardial surface of a heart adjacent a coronary vessel having a vessel axis. The base member has a determinable base axis for placement of the base surface on the epicardial surface with the base axis parallel with the vessel axis. A support member supports a myocardial penetrator for movement along a support axis in a line of travel parallel to the support axis and substantially restricting the myocardial penetrator from movement transverse to the support axis. The support member is secure to the base member with the support axis and base axis defining a support angle. The support angle and the implant angle are supplementary angles.
    • 一种装置控制通过心肌形成孔的方向,用于随后放置到经心肌内植入物的心肌部分的孔中。 植入物还包括具有以心轴部分的心肌轴线的植入角度设置的冠状轴的冠状部分。 该装置包括基部构件,其具有用于放置在与具有血管轴线的冠状血管相邻的心脏的心外膜表面上的基底表面。 基部构件具有用于将基部表面放置在心外膜表面上的可确定的基本轴线,其基部轴线与血管轴线平行。 支撑构件支撑心肌穿透器,用于沿平行于支撑轴线的行行沿着支撑轴线移动,并且基本上限制心肌穿透器横向于支撑轴线的移动。 支撑构件固定到基部构件上,支撑轴线和基座轴线限定支撑角度。 支撑角和植入角是辅助角度。
    • 2. 发明授权
    • Process for manufacturing hollow fused-silica insulator cylinder
    • 中空熔融石英绝缘子圆筒制造工艺
    • US06331194B1
    • 2001-12-18
    • US08889587
    • 1997-07-08
    • Stephen E. SampayanMichael L. KroghSteven C. DavisDerek E. DeckerBen Z. RosenblumDavid M. SandersJuan M. Elizondo-Decanini
    • Stephen E. SampayanMichael L. KroghSteven C. DavisDerek E. DeckerBen Z. RosenblumDavid M. SandersJuan M. Elizondo-Decanini
    • H01G900
    • H05H7/00H05H7/22H05H9/00Y10T29/417
    • A method for building hollow insulator cylinders that can have each end closed off with a high voltage electrode to contain a vacuum. A series of fused-silica round flat plates are fabricated with a large central hole and equal inside and outside diameters. The thickness of each is related to the electron orbit diameter of electrons that escape the material surface, loop, and return back. Electrons in such electron orbits can support avalanche mechanisms that result in surface flashover. For example, the thickness of each of the fused-silica round flat plates is about 0.5 millimeter. In general, the thinner the better. Metal, such as gold, is deposited onto each top and bottom surface of the fused-silica round flat plates using chemical vapor deposition (CVD). Eutectic metals can also be used with one alloy constituent on the top and the other on the bottom. The CVD, or a separate diffusion step, can be used to defuse the deposited metal deep into each fused-silica round flat plate. The conductive layer may also be applied by ion implantation or gas diffusion into the surface. The resulting structure may then be fused together into an insulator stack. The coated plates are aligned and then stacked, head-to-toe. Such stack is heated and pressed together enough to cause the metal interfaces to fuse, e.g., by welding, brazing or eutectic bonding. Such fusing is preferably complete enough to maintain a vacuum within the inner core of the assembled structure. A hollow cylinder structure results that can be used as a core liner in a dielectric wall accelerator and as a vacuum envelope for a vacuum tube device where the voltage gradients exceed 150 kV/cm.
    • 一种用于构建中空绝缘体圆筒的方法,其可以将每个端部用高压电极封闭以包含真空。 一系列熔融石英圆形平板制造具有大的中心孔,内径和外径相等。 每个的厚度都与逃离材料表面的电子的电子轨道直径相关,并且返回。 这种电子轨道中的电子可以支持导致表面闪络的雪崩机制。 例如,每个熔融硅石圆形平板的厚度为约0.5毫米。 一般来说,越薄越好。 使用化学气相沉积(CVD)将诸如金的金属沉积在熔融二氧化硅圆形平板的每个顶部和底部表面上。 共晶金属也可以在顶部和底部的一个合金成分上使用。 可以使用CVD或单独的扩散步骤来将沉积的金属溶解到每个熔融二氧化硅圆形平板中。 导电层也可以通过离子注入或气体扩散施加到表面中。 然后将所得结构融合在一起成为绝缘体叠层。 涂覆的板对齐,然后堆叠,头对脚趾。 这种堆叠被加热并被压在一起足以使金属界面熔合,例如通过焊接,钎焊或共晶粘合。 这种熔化优选是完全足够的以保持组装结构的内芯内的真空。 中空圆筒结构可以用作电介质壁加速器中的芯衬层,并且用作电压梯度超过150kV / cm的真空管装置的真空封壳。