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    • 1. 发明授权
    • Program check for a non-volatile memory
    • 程序检查非易失性存储器
    • US4943948A
    • 1990-07-24
    • US871214
    • 1986-06-05
    • Bruce L. MortonBruce E. EnglesMichael H. Chaddock
    • Bruce L. MortonBruce E. EnglesMichael H. Chaddock
    • G11C16/34
    • G11C16/3459G11C16/3454
    • A non-volatile memory has memory cells which are programmable to a programmed state from an unprogrammed state. Programming changes the conductivity of the memory cell which is being programmed. The particular state of a selected memory cell is determined by comparing the conductivity of the selected memory cell to that of a normal reference. In order to assure that a memory cell has been programmed to a conductivity which is sufficient for reliable detection, a substitute reference with a different conductivity is used immediately after programming. If the selected cell is detected as being programmed when compared to the substitute reference, the selected cell is then determined to have been sufficiently programmed for reliable detection using the normal reference.
    • 非易失性存储器具有从未编程状态可编程为编程状态的存储器单元。 编程改变正在编程的存储单元的电导率。 所选择的存储单元的特定状态通过将所选择的存储单元的电导率与正常参考的电导率进行比较来确定。 为了确保将存储单元编程为足以进行可靠检测的电导率,在编程之后立即使用具有不同导电性的替代参考。 如果所选择的单元被检测为与替代参考相比被编程,则所选择的单元然后被确定为已被充分地编程以便使用正常参考来进行可靠的检测。