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    • 3. 发明授权
    • Techniques for controlling removal of a circuit board from a chassis using a button
    • 用于使用按钮控制从机架移除电路板的技术
    • US07292456B2
    • 2007-11-06
    • US11274024
    • 2005-11-15
    • Jimmy LeungMandy LamToan NguyenSaeed SeyedMichael Chern
    • Jimmy LeungMandy LamToan NguyenSaeed SeyedMichael Chern
    • H05K7/12
    • H05K7/1409
    • A control assembly controls removal of a circuit board from a chassis. The control assembly includes a support member configured to fasten to the circuit board, and a handle pivotally attached to the support member. The handle is configured to swing from an opened position to a closed position relative to the support member during installation of the circuit board within the chassis, and from the closed position to the opened position during removal of the circuit board from the chassis. The control assembly further includes a button configured to move between a biased position and a depressed position relative to the support member. The button is further configured to (i) inhibit removal of the circuit board from the chassis when the button is in the biased position, and (ii) enable removal of the circuit board from the chassis when the button is in the depressed position.
    • 控制组件控制电路板从机箱的移除。 控制组件包括构造成紧固到电路板的支撑构件和可枢转地附接到支撑构件的手柄。 手柄被构造成在将电路板安装在底盘内时从相对于支撑构件的打开位置摆动到闭合位置,并且在将电路板从底盘移除期间从关闭位置转动到打开位置。 所述控制组件还包括按钮,所述按钮被配置为相对于所述支撑构件在偏置位置和凹陷位置之间移动。 该按钮还被配置为(i)当按钮处于偏置位置时,禁止从底盘移除电路板,以及(ii)当按钮处于按压位置时,使得能够从底盘移除电路板。
    • 4. 发明授权
    • Methods and apparatus for attaching a heat sink to a circuit board component
    • 将散热器附接到电路板部件的方法和装置
    • US06856511B1
    • 2005-02-15
    • US10621836
    • 2003-07-17
    • Rainier ViernesMichael Chern
    • Rainier ViernesMichael Chern
    • H01L23/40H05K7/20
    • H01L23/4093H01L2224/16
    • A retainer directly attaches to a circuit board component and to a heat sink and secures the circuit board component to the heat sink. The retainer provides a mechanical attachment between the heat sink and the circuit board component. Such mechanical attachment maintains thermal communication between the heat sink and the circuit board component in the absence of a thermally conductive adhesive between the heat sink and the circuit board component for the operational life of the circuit board component. Furthermore, because the retainer attaches directly to the circuit board component and to the heat sink, the retainer minimizes the necessity for use of mounting holes in the circuit board associated with the circuit board component to secure the heat sink to the circuit board component.
    • 保持器直接连接到电路板部件和散热器,并将电路板部件固定到散热器。 保持器在散热器和电路板部件之间提供机械连接。 在电路板部件的使用寿命期间,这种机械连接在散热器和电路板部件之间没有导热粘合剂的情况下保持散热器和电路板部件之间的热连通。 此外,由于保持器直接连接到电路板部件和散热器,所以保持器最小化在与电路板部件相关联的电路板中使用安装孔的必要性,以将散热器固定到电路板部件。
    • 5. 发明授权
    • High cell density power rectifier
    • 高电池密度功率整流器
    • US06186408B1
    • 2001-02-13
    • US09322269
    • 1999-05-28
    • Vladimir RodovWayne Y. W. HsuehPaul ChangMichael Chern
    • Vladimir RodovWayne Y. W. HsuehPaul ChangMichael Chern
    • H01L21336
    • H01L29/861H01L27/0814H01L27/095
    • A power rectifier having low on resistance, fast recovery times and very low forward voltage drop. In a preferred embodiment, the present invention provides a power rectifier device employing a vertical device structure, i.e., with current flow between the major surfaces of the discrete device. The device employs a large number of parallel connected cells, each comprising a MOSFET structure with a gate to drain short via a common metallization. A self aligned body implant and a shallow silicide drain contact region integrated with a metal silicide drain contact define a narrow channel region and allow very high cell density. This provides a low Vf path through the channel regions of the MOSFET cells to the contact on the other side of the integrated circuit. The present invention further provides a method for manufacturing a rectifier device which provides the above desirable device characteristics in a repeatable manner. Also, only two masking steps are required, reducing processing costs.
    • 具有导通电阻低,快速恢复时间和非常低的正向压降的电力整流器。 在优选实施例中,本发明提供一种采用垂直装置结构的电力整流装置,即在分立装置主要表面之间的电流流动。 该器件采用大量并联连接的单元,每个单元包括具有栅极的MOSFET结构,以通过公共金属化来短路。 与金属硅化物漏极接触点整合的自对准体植入物和浅硅化物漏极接触区域限定窄通道区域并且允许非常高的细胞密度。 这提供了通过MOSFET单元的沟道区域到集成电路另一侧上的触点的低Vf路径。 本发明还提供了一种用于制造以可重复的方式提供上述所需装置特性的整流装置的方法。 此外,只需要两个屏蔽步骤,从而降低处理成本。
    • 6. 发明授权
    • Reconfigurable patch panel
    • 可重新配置的接线板
    • US07874869B2
    • 2011-01-25
    • US12411444
    • 2009-03-26
    • Michael ChernSaeed SeyedTung Po Yang
    • Michael ChernSaeed SeyedTung Po Yang
    • H01R13/73H02B1/01
    • H01R13/518H04Q1/131Y10T29/53209
    • A reconfigurable patch panel and a method of reconfiguring a patch panel comprising a support member supporting at least one adapter, where the at least one adapter comprises a plurality of ports for coupling to electric signal bearing cables. A pivot, associated with each of the at least one adapters, couples the at least one adapter to the support member. The at least one adapter selectively rotates about the pivot to a selected position relative to the support member. A retainer, associated with each of the at least one adapters, couples the support member to the at least one adapter and retains the at least one adapter in the selected position.
    • 一种可重构接线板和重新配置接线板的方法,其包括支撑至少一个适配器的支撑构件,其中所述至少一个适配器包括用于耦合到电信号轴承电缆的多个端口。 与所述至少一个适配器中的每一个相关联的枢轴将所述至少一个适配器耦合到所述支撑构件。 所述至少一个适配器选择性地围绕所述枢轴旋转到相对于所述支撑构件的选定位置。 与所述至少一个适配器中的每一个相关联的保持器将所述支撑构件联接到所述至少一个适配器并将所述至少一个适配器保持在所选择的位置。
    • 7. 发明申请
    • Reconfigurable Patch Panel
    • 可重新配置的面板
    • US20100248535A1
    • 2010-09-30
    • US12411444
    • 2009-03-26
    • Michael ChernSaeed SevedTung Po Yang
    • Michael ChernSaeed SevedTung Po Yang
    • H01R13/514H01R43/20
    • H01R13/518H04Q1/131Y10T29/53209
    • A reconfigurable patch panel and a method of reconfiguring a patch panel comprising a support member supporting at least one adapter, where the at least one adapter comprises a plurality of ports for coupling to electric signal bearing cables. A pivot, associated with each of the at least one adapters, couples the at least one adapter to the support member. The at least one adapter selectively rotates about the pivot to a selected position relative to the support member. A retainer, associated with each of the at least one adapters, couples the support member to the at least one adapter and retains the at least one adapter in the selected position.
    • 一种可重构接线板和重新配置接线板的方法,其包括支撑至少一个适配器的支撑构件,其中所述至少一个适配器包括用于耦合到电信号轴承电缆的多个端口。 与所述至少一个适配器中的每一个相关联的枢轴将所述至少一个适配器耦合到所述支撑构件。 所述至少一个适配器选择性地围绕所述枢轴旋转到相对于所述支撑构件的选定位置。 与所述至少一个适配器中的每一个相关联的保持器将所述支撑构件联接到所述至少一个适配器并将所述至少一个适配器保持在所选择的位置。
    • 9. 发明申请
    • Method For Erasing A Flash Memory Cell Or An Array Of Such Cells Having Improved Erase Coupling Ratio
    • 用于擦除闪存单元的方法或者具有改善的擦除耦合比的这样的单元阵列
    • US20090201744A1
    • 2009-08-13
    • US12027654
    • 2008-02-07
    • Geeng-Chuan Michael ChernBen SheenJonathan PabustanPrateep TuntasoodDer-Tsyr FanYaw Wen Hu
    • Geeng-Chuan Michael ChernBen SheenJonathan PabustanPrateep TuntasoodDer-Tsyr FanYaw Wen Hu
    • G11C16/16
    • G11C16/16
    • A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
    • 闪存单元是具有第一导电类型的衬底的类型,在第一端具有第二导电类型的第一区域,在第二端处具有与第一端部间隔开的第二导电类型的第二区域 ,在第一端和第二端之间具有通道区域。 闪存单元具有多个堆叠的浮置栅极和控制栅极对,其中浮置栅极位于沟道区域的部分上方并与其绝缘,并且每个控制栅极在浮动栅极上并与其隔离。 闪速存储单元还在通道区域上具有与其绝缘的多个擦除栅极,在每对堆叠的一对浮置栅极和控制栅极之间具有擦除栅极。 在擦除闪存单元的方法中,将第一正电压的脉冲施加到交替擦除栅极(“第一交替栅极”)。 此外,施加接地电压以擦除除第一交流栅极(“第二交替栅极”)之外的栅极。 在擦除闪存单元的第二种方法中,将第一正电压的脉冲施加到第一交流栅极,并且向第二交替栅极和所有控制栅极施加负电压。
    • 10. 发明授权
    • Method for erasing a flash memory cell or an array of such cells having improved erase coupling ratio
    • 擦除具有改善的擦除耦合比的这种单元的闪存单元或阵列的方法
    • US07974136B2
    • 2011-07-05
    • US12645337
    • 2009-12-22
    • Geeng-Chuan Michael ChernBen SheenJonathan PabustanDer-Tsyr FanYaw Wen HuPrateep Tuntasood
    • Geeng-Chuan Michael ChernBen SheenJonathan PabustanDer-Tsyr FanYaw Wen HuPrateep Tuntasood
    • G11C16/04
    • G11C16/16
    • A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
    • 闪存单元是具有第一导电类型的衬底的类型,在第一端具有第二导电类型的第一区域,在第二端处具有与第一端部间隔开的第二导电类型的第二区域 ,在第一端和第二端之间具有通道区域。 闪存单元具有多个堆叠的浮置栅极和控制栅极对,其中浮置栅极位于沟道区域的部分上方并与其绝缘,并且每个控制栅极在浮动栅极上并与其隔离。 闪速存储单元还在通道区域上具有与其绝缘的多个擦除栅极,在每对堆叠的一对浮置栅极和控制栅极之间具有擦除栅极。 在擦除闪存单元的方法中,将第一正电压的脉冲施加到交替擦除栅极(“第一交替栅极”)。 此外,施加接地电压以擦除除第一交流栅极(“第二交替栅极”)之外的栅极。 在擦除闪存单元的第二种方法中,将第一正电压的脉冲施加到第一交流栅极,并且向第二交替栅极和所有控制栅极施加负电压。