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1. 发明授权

US09136229B2 Electrostatic discharge protective device 有权
标题翻译：静电放电保护装置
公开(公告)号：US09136229B2
公开(公告)日：2015-09-15
申请号：US14130427
申请日：2012-08-09
申请人： Meng Dai
发明人： Meng Dai
IPC分类号： H01L29/66 , H01L23/60 , H01L29/74 , H01L27/02
CPC分类号： H01L23/60 , H01L27/0262 , H01L29/7436 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection device is provided. A proper trigger voltage is determined by providing an ESD doped injection layer into a PNPN structure and adjusting the injection energy and dosage of the ESD doped injection layer; a proper holding voltage is obtained by adjusting the size of the ESD doped injection layer, thus preventing the latch-up. The self-isolation effect of the electrostatic discharge protection device is formed on the basis of an epitaxial wafer high voltage process or a silicon-on-insulator (SOI) wafer high voltage process, the ESD protective device of the present invention can prevent the device from being falsely triggered due to noise interference. Compared with other known ESD protection devices, the device has the same electrostatic protection ability, much smaller area, and much lower cost.
摘要翻译：提供一种静电放电（ESD）保护装置。通过将ESD掺杂注入层提供到PNPN结构中并调整ESD掺杂注入层的注入能量和剂量来确定适当的触发电压; 通过调整ESD掺杂注入层的尺寸来获得适当的保持电压，从而防止闩锁。基于外延晶片高压工艺或绝缘体上硅（SOI）晶片高压工艺，形成静电放电保护器件的自隔离效果，本发明的ESD保护器件可以防止器件由于噪音干扰而被误导。与其他已知的ESD保护器件相比，该器件具有相同的静电保护能力，面积小得多，成本低得多。

2. 发明申请

US20130099278A1 SCR APPARATUS AND METHOD FOR ADJUSTING THE SUSTAINING VOLTAGE 有权
标题翻译：用于调整持续电压的SCR装置和方法
公开(公告)号：US20130099278A1
公开(公告)日：2013-04-25
申请号：US13807317
申请日：2011-12-05
申请人： Meng Dai , Zhongyu Lin
发明人： Meng Dai , Zhongyu Lin
IPC分类号： H01L27/06
CPC分类号： H01L27/0623 , H01L27/0262 , H01L29/1016 , H01L29/749 , H01L29/87
摘要： An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.
摘要翻译： SCR装置包括SCR结构和第一N注入区域。 SCR结构包括P +注入区，P阱，N阱和第一N +注入区，第一N注入区位于SCR结构的P +注入区的阳极端子的下方。还提供了一种用于调整其维持电压的方法。

3. 发明授权

US08890259B2 SCR apparatus and method for adjusting the sustaining voltage 有权
标题翻译： SCR装置和调整维持电压的方法
公开(公告)号：US08890259B2
公开(公告)日：2014-11-18
申请号：US13807317
申请日：2011-12-05
申请人： Meng Dai , Zhongyu Lin
发明人： Meng Dai , Zhongyu Lin
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119 , H01L29/74 , H01L31/111 , H01L21/8238 , H01L27/06 , H01L27/02 , H01L29/87 , H01L29/749 , H01L29/10
CPC分类号： H01L27/0623 , H01L27/0262 , H01L29/1016 , H01L29/749 , H01L29/87
摘要： An SCR apparatus includes an SCR structure and a first N injection region. The SCR structure includes a P+ injection region, a P well, an N well and a first N+ injection region, the first N injection region is located under an anode terminal of the P+ injection region of the SCR structure. A method for adjusting a sustaining voltage therefor is provided as well.
摘要翻译： SCR装置包括SCR结构和第一N注入区域。 SCR结构包括P +注入区，P阱，N阱和第一N +注入区，第一N注入区位于SCR结构的P +注入区的阳极端子的下方。还提供了一种用于调整其维持电压的方法。

4. 发明申请

US20140151745A1 ELECTROSTATIC DISCHARGE PROTECTIVE DEVICE 有权
标题翻译：静电放电保护装置
公开(公告)号：US20140151745A1
公开(公告)日：2014-06-05
申请号：US14130427
申请日：2012-08-09
申请人： Meng Dai
发明人： Meng Dai
IPC分类号： H01L23/60
CPC分类号： H01L23/60 , H01L27/0262 , H01L29/7436 , H01L2924/0002 , H01L2924/00
摘要： An electrostatic discharge (ESD) protection device is provided. A proper trigger voltage is determined by providing an ESD doped injection layer into a PNPN structure and adjusting the injection energy and dosage of the ESD doped injection layer; a proper holding voltage is obtained by adjusting the size of the ESD doped injection layer, thus preventing the latch-up. The self-isolation effect of the electrostatic discharge protection device is formed on the basis of an epitaxial wafer high voltage process or a silicon-on-insulator (SOI) wafer high voltage process, the ESD protective device of the present invention can prevent the device from being falsely triggered due to noise interference. Compared with other known ESD protection devices, the device has the same electrostatic protection ability, much smaller area, and much lower cost.
摘要翻译：提供静电放电（ESD）保护装置。通过将ESD掺杂注入层提供到PNPN结构中并调整ESD掺杂注入层的注入能量和剂量来确定适当的触发电压; 通过调整ESD掺杂注入层的尺寸来获得适当的保持电压，从而防止闩锁。基于外延晶片高压工艺或绝缘体上硅（SOI）晶片高压工艺，形成静电放电保护器件的自隔离效果，本发明的ESD保护器件可以防止器件由于噪音干扰而被误导。与其他已知的ESD保护器件相比，该器件具有相同的静电保护能力，面积小得多，成本低得多。

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