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1. 发明申请

US20120256311A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120256311A1
公开(公告)日：2012-10-11
申请号：US13443869
申请日：2012-04-10
申请人： Kenichi TAKEDA , Mayu AOKI , Kazuyuki HOZAWA
发明人： Kenichi TAKEDA , Mayu AOKI , Kazuyuki HOZAWA
IPC分类号： H01L23/498 , H01L21/762
CPC分类号： H01L24/11 , H01L23/481 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0345 , H01L2224/0362 , H01L2224/0401 , H01L2224/05009 , H01L2224/05624 , H01L2224/1145 , H01L2224/1148 , H01L2224/11616 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/26125 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/81193 , H01L2224/81203 , H01L2224/83203 , H01L2224/9211 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/10253 , H01L2924/14 , H01L2924/00015 , H01L2224/81 , H01L2224/83
摘要： A bump electrode, a dummy bump, and a heat-resistant polymer film, whose upper-surface heights are uniformed, are formed on each of a first silicon substrate and a second silicon substrate, and then, the first silicon substrate and the second silicon substrate are bonded to each other so that the bump electrodes formed on the respective substrates are electrically connected to each other. At this time, the dummy bump is arranged so as to be bonded to the heat-resistant polymer film on the silicon substrate opposed thereto, so that a semiconductor device having both of good electrical connection between the bump electrodes and bump protection performance obtained by a polymer film with high heat resistance and without voids can be achieved.
摘要翻译：在第一硅衬底和第二硅衬底上的每个上形成凸起电极，虚拟凸块和上表面高度均匀的耐热聚合物膜，然后，第一硅衬底和第二硅基板彼此接合，使得形成在各个基板上的凸块电极彼此电连接。此时，虚拟凸块被布置成与其相对的硅衬底上的耐热聚合物膜结合，从而具有凸起电极之间良好的电连接和凸起保护性能两者的半导体器件可以实现具有高耐热性和无空隙的聚合物膜。

2. 发明授权

US08410615B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08410615B2
公开(公告)日：2013-04-02
申请号：US13178470
申请日：2011-07-07
申请人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
发明人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
IPC分类号： H01L21/28
CPC分类号： H01L25/50 , H01L23/481 , H01L23/562 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/29 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/0401 , H01L2224/05547 , H01L2224/05557 , H01L2224/08121 , H01L2224/11462 , H01L2224/1148 , H01L2224/11602 , H01L2224/13019 , H01L2224/13147 , H01L2224/13565 , H01L2224/13582 , H01L2224/13647 , H01L2224/13687 , H01L2224/1403 , H01L2224/14051 , H01L2224/26122 , H01L2224/2919 , H01L2224/73104 , H01L2224/81007 , H01L2224/81203 , H01L2224/83007 , H01L2224/83203 , H01L2224/83862 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2924/00013 , H01L2924/01029 , H01L2924/10253 , H01L2924/14 , H01L2224/11 , H01L2924/00014 , H01L2924/04941 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A semiconductor device including two silicon wafers stacked and bonded together with bumps of one wafer electrically coupled with those of the other wafer, in which generation of voids on the junction surface between the silicon wafers is suppressed. Due to a recess made in the surface of a buried conductive film, a cavity is formed in the junction surface between the silicon wafers. The ends of the cavity extend to the periphery of the junction surface between the silicon wafers. This allows the air trapped on the junction surface between the silicon wafers to get out through the cavity, thereby reducing the possibility of generation of voids on the junction surface.
摘要翻译：一种半导体器件，包括两个硅晶片，其叠置并与由另一个晶片电耦合的一个晶片的凸块结合在一起，其中硅晶片之间的接合表面上的空隙产生被抑制。由于在掩埋导电膜的表面上形成的凹部，在硅晶片之间的接合表面中形成空腔。腔的端部延伸到硅晶片之间的接合表面的周边。这允许捕获在硅晶片之间的接合表面上的空气通过空腔排出，从而减少在接合表面上产生空隙的可能性。

3. 发明申请

US20120315710A1 METHOD FOR PRODUCING RECONSTITUTED WAFERS AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICES 审中-公开
标题翻译：用于生产重构波的方法和用于生产半导体器件的方法
公开(公告)号：US20120315710A1
公开(公告)日：2012-12-13
申请号：US13578341
申请日：2011-02-01
申请人： Kazuyuki Hozawa , Kenichi Takeda , Mayu Aoki
发明人： Kazuyuki Hozawa , Kenichi Takeda , Mayu Aoki
IPC分类号： H01L21/82 , H01L21/66
CPC分类号： H01L22/20 , H01L21/6835 , H01L22/14 , H01L24/11 , H01L24/13 , H01L24/14 , H01L24/81 , H01L24/96 , H01L25/0657 , H01L25/50 , H01L2221/68322 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2224/04105 , H01L2224/1146 , H01L2224/1147 , H01L2224/11845 , H01L2224/13111 , H01L2224/13144 , H01L2224/13147 , H01L2224/16145 , H01L2224/2919 , H01L2224/81193 , H01L2224/83002 , H01L2224/831 , H01L2224/83129 , H01L2224/83191 , H01L2224/83192 , H01L2224/83862 , H01L2224/8389 , H01L2224/94 , H01L2224/96 , H01L2225/06513 , H01L2225/06541 , H01L2225/06596 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01077 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/15788 , H01L2924/3511 , H01L2924/00014 , H01L2924/01047 , H01L2224/81 , H01L2224/11 , H01L2924/00
摘要： In order to provide a method for producing semiconductor devices that can use the highly productive W to W method, and achieve a high yield, a method for producing semiconductor devices comprises a step (S401) in which a reconstituted wafer is prepared by replacing defective chips with non-defective chips, a step (S403) in which the reconstituted wafer and the base wafer are connected to one another by laminating, a step (S406) in which through-electrodes are formed in the reconstituted wafer, and a step (S409) in which a separate reconstituted wafer is laminated onto and connected to the reconstituted wafer having through-electrodes.
摘要翻译：为了提供可以使用高生产率的W到W方法的半导体器件的制造方法，并且实现高产率，制造半导体器件的方法包括步骤（S401），其中通过替换有缺陷的芯片来制备重构的晶片利用无缺陷的芯片，通过层叠将复原晶片和基底晶片彼此连接的步骤（S403），其中在重新构成的晶片中形成贯通电极的步骤（S406）和步骤（S409 ），其中将单独的重构晶片层压到具有通孔的重构晶片上并连接到其上。

4. 发明申请

US20120098106A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120098106A1
公开(公告)日：2012-04-26
申请号：US13381070
申请日：2009-07-01
申请人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
发明人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/522 , H01L21/76898 , H01L23/481 , H01L23/564 , H01L25/0657 , H01L2924/0002 , H01L2924/00
摘要： When a silicon through electrode is to be formed from a back surface (the surface on which a semiconductor device is not formed) of a silicon substrate, a wide range of an interlayer insulating film made of a Low-k material absorbs moisture, and there is a problem that the electrical characteristics of wiring are degraded. The above-described problem can be solved by forming at least a single ring-shaped frame laid out to enclose the silicon through electrode by using metal wirings in plural layers and a connection via connecting the upper and lower metal wirings in a Low-k material layer penetrated by the silicon through electrode and by forming a moisture barrier film made up of at least a metal wiring and a connection via between the silicon through electrode and a circuit wiring formed in the vicinity of the silicon through electrode.
摘要翻译：当从硅衬底的背面（未形成半导体器件的表面）形成硅通电极时，由Low-k材料制成的宽范围的层间绝缘膜吸收水分，在那里是布线的电气特性劣化的问题。上述问题可以通过形成至少一个单一的环形框架来布置，以通过使用多层金属布线将硅包围在电极中，并且通过在Low-k材料中连接上部和下部金属布线的连接并且通过形成由至少金属布线构成的防潮膜和在硅通孔电极和形成在硅通孔电极附近的电路布线之间的连接通孔。

5. 发明授权

US08749028B2 Semiconductor device with silicon through electrode and moisture barrier 有权
标题翻译：半导体器件带硅通电极和防潮层
公开(公告)号：US08749028B2
公开(公告)日：2014-06-10
申请号：US13381070
申请日：2009-07-01
申请人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
发明人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
IPC分类号： H01L23/522
CPC分类号： H01L23/522 , H01L21/76898 , H01L23/481 , H01L23/564 , H01L25/0657 , H01L2924/0002 , H01L2924/00
摘要： When a silicon through electrode is to be formed from a back surface (the surface on which a semiconductor device is not formed) of a silicon substrate, a wide range of an interlayer insulating film made of a Low-k material absorbs moisture, and there is a problem that the electrical characteristics of wiring are degraded. The above-described problem can be solved by forming at least a single ring-shaped frame laid out to enclose the silicon through electrode by using metal wirings in plural layers and a connection via connecting the upper and lower metal wirings in a Low-k material layer penetrated by the silicon through electrode and by forming a moisture barrier film made up of at least a metal wiring and a connection via between the silicon through electrode and a circuit wiring formed in the vicinity of the silicon through electrode.
摘要翻译：当从硅衬底的背面（未形成半导体器件的表面）形成硅通电极时，由Low-k材料制成的宽范围的层间绝缘膜吸收水分，在那里是布线的电气特性劣化的问题。上述问题可以通过形成至少一个单一的环形框架来布置，以通过使用多层金属布线将硅包围在电极中，并且通过在Low-k材料中连接上部和下部金属布线的连接并且通过形成由至少金属布线构成的防潮膜和在硅通孔电极和形成在硅通孔电极附近的电路布线之间的连接通孔。

6. 发明授权

US08618667B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08618667B2
公开(公告)日：2013-12-31
申请号：US13443869
申请日：2012-04-10
申请人： Kenichi Takeda , Mayu Aoki , Kazuyuki Hozawa
发明人： Kenichi Takeda , Mayu Aoki , Kazuyuki Hozawa
IPC分类号： H01L23/48 , H01L23/52
CPC分类号： H01L24/11 , H01L23/481 , H01L24/14 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/83 , H01L24/92 , H01L24/94 , H01L25/0657 , H01L2224/0345 , H01L2224/0362 , H01L2224/0401 , H01L2224/05009 , H01L2224/05624 , H01L2224/1145 , H01L2224/1148 , H01L2224/11616 , H01L2224/13025 , H01L2224/14181 , H01L2224/16145 , H01L2224/16225 , H01L2224/26125 , H01L2224/2919 , H01L2224/32145 , H01L2224/73104 , H01L2224/81193 , H01L2224/81203 , H01L2224/83203 , H01L2224/9211 , H01L2224/92125 , H01L2224/94 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2225/06565 , H01L2924/10253 , H01L2924/14 , H01L2924/00015 , H01L2224/81 , H01L2224/83
摘要： A bump electrode, a dummy bump, and a heat-resistant polymer film, whose upper-surface heights are uniformed, are formed on each of a first silicon substrate and a second silicon substrate, and then, the first silicon substrate and the second silicon substrate are bonded to each other so that the bump electrodes formed on the respective substrates are electrically connected to each other. At this time, the dummy bump is arranged so as to be bonded to the heat-resistant polymer film on the silicon substrate opposed thereto, so that a semiconductor device having both of good electrical connection between the bump electrodes and bump protection performance obtained by a polymer film with high heat resistance and without voids can be achieved.
摘要翻译：在第一硅衬底和第二硅衬底上的每个上形成凸起电极，虚拟凸块和上表面高度均匀的耐热聚合物膜，然后，第一硅衬底和第二硅基板彼此接合，使得形成在各个基板上的凸块电极彼此电连接。此时，虚拟凸块被布置成与其相对的硅衬底上的耐热聚合物膜结合，从而具有凸起电极之间良好的电连接和凸起保护性能两者的半导体器件可以实现具有高耐热性和无空隙的聚合物膜。

7. 发明申请

US20120068355A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120068355A1
公开(公告)日：2012-03-22
申请号：US13178470
申请日：2011-07-07
申请人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
发明人： Mayu Aoki , Kenichi Takeda , Kazuyuki Hozawa
IPC分类号： H01L23/48 , H01L21/28
CPC分类号： H01L25/50 , H01L23/481 , H01L23/562 , H01L24/05 , H01L24/08 , H01L24/13 , H01L24/29 , H01L24/80 , H01L24/81 , H01L24/83 , H01L24/92 , H01L25/0657 , H01L2224/0401 , H01L2224/05547 , H01L2224/05557 , H01L2224/08121 , H01L2224/11462 , H01L2224/1148 , H01L2224/11602 , H01L2224/13019 , H01L2224/13147 , H01L2224/13565 , H01L2224/13582 , H01L2224/13647 , H01L2224/13687 , H01L2224/1403 , H01L2224/14051 , H01L2224/26122 , H01L2224/2919 , H01L2224/73104 , H01L2224/81007 , H01L2224/81203 , H01L2224/83007 , H01L2224/83203 , H01L2224/83862 , H01L2224/9211 , H01L2224/94 , H01L2225/06513 , H01L2924/00013 , H01L2924/01029 , H01L2924/10253 , H01L2924/14 , H01L2224/11 , H01L2924/00014 , H01L2924/04941 , H01L2224/81 , H01L2224/83 , H01L2224/13099 , H01L2224/05099 , H01L2224/13599 , H01L2224/05599 , H01L2224/29099 , H01L2224/29599 , H01L2924/00
摘要： A semiconductor device including two silicon wafers stacked and bonded together with bumps of one wafer electrically coupled with those of the other wafer, in which generation of voids on the junction surface between the silicon wafers is suppressed. Due to a recess made in the surface of a buried conductive film, a cavity is formed in the junction surface between the silicon wafers. The ends of the cavity extend to the periphery of the junction surface between the silicon wafers. This allows the air trapped on the junction surface between the silicon wafers to get out through the cavity, thereby reducing the possibility of generation of voids on the junction surface.
摘要翻译：一种半导体器件，包括两个硅晶片，其叠置并与由另一个晶片电耦合的一个晶片的凸块结合在一起，其中硅晶片之间的接合表面上的空隙产生被抑制。由于在掩埋导电膜的表面上形成的凹部，在硅晶片之间的接合表面中形成空腔。腔的端部延伸到硅晶片之间的接合表面的周边。这允许捕获在硅晶片之间的接合表面上的空气通过空腔排出，从而减少在接合表面上产生空隙的可能性。

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