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    • 2. 发明申请
    • Handheld Medical Diagnostic Devices With Lancing Speed Control
    • 带有牵引速度控制的手持式医疗诊断装置
    • US20120172760A1
    • 2012-07-05
    • US12981816
    • 2010-12-30
    • Steven N. RoeChris FruhaufMax Chen
    • Steven N. RoeChris FruhaufMax Chen
    • A61B5/151
    • A61B5/150419A61B5/150022A61B5/150167A61B5/150175A61B5/150267A61B5/150427A61B5/150503A61B5/150572A61B5/150946A61B5/15113A61B5/15117A61B5/15132A61B5/15151A61B5/15161A61B5/15182A61B5/157
    • A method of controlling lancing speed of a lancing structure of a portable handheld medical diagnostic device includes providing an elongated lancet structure having a skin piercing end and a blood transport portion adjacent the skin piercing end. The skin piercing end when displaced makes an incision at a skin site to produce an amount of bodily fluid from the skin site and in which the blood transport portion transports the amount of bodily fluid away from the skin site for use by a measurement system in making a physiological measurement. A spring-driven motor assembly is operatively connected to the lancet structure. The spring-driven motor assembly displaces the lancet structure toward the skin site to make the incision for producing the amount of bodily fluid and retracts the lancet structure to carry the amount of bodily fluid away from the skin cite. A speed control mechanism is engaged with the spring-driven motor assembly as the spring-driven motor assembly retracts the lancet structure thereby decelerating the lancet structure as the lancet structure is retracted away from the skin site.
    • 一种控制便携式手持式医疗诊断装置的穿刺结构的穿刺速度的方法包括:提供具有皮肤刺穿端的细长刺血针结构和邻近皮肤刺穿端的血液输送部分。 移位时的皮肤穿刺端在皮肤部位进行切口,以从皮肤部位产生一定量的体液,其中血液输送部分将体液的量从皮肤部位输送出去,以供测量系统制造 生理测量。 弹簧驱动的马达组件可操作地连接到刺血针结构。 弹簧驱动的马达组件将柳叶刀结构移动到皮肤部位,以形成用于产生体液量的切口,并使柳叶刀结构缩回以将体液的数量远离皮肤引诱。 当弹簧驱动的马达组件缩回柳叶刀结构,从而当刺血针结构从皮肤部位缩回时使柳叶刀结构减速,速度控制机构与弹簧驱动马达组件接合。
    • 3. 发明授权
    • Drive carrier for computer systems
    • 电脑系统的驱动器
    • US07639492B2
    • 2009-12-29
    • US11741666
    • 2007-04-27
    • Fred C. ThomasMax ChenArthur SandovalTravis LeeMatthew Peterson
    • Fred C. ThomasMax ChenArthur SandovalTravis LeeMatthew Peterson
    • H05K5/00H05K7/00
    • G11B33/128G06F1/187G11B33/1493
    • A drive carrier for computer systems. At least some of the illustrative embodiments are drive carriers comprising a first suspension member that defines a first side of the drive carrier, a second suspension member that defines a second side of the drive carrier (the second suspension member configured to be manually flexed resiliently away from the drive carrier during installation of a disk drive), a handle having a hinge point coupled to the suspension members (the hinge point defining an axis of rotation for the handle, and the axis of rotation lies substantially parallel to a plane in which both suspension members reside), a first pin configured to couple to a mounting hole of the disk drive (and the first pin coupled to the first suspension member), and a second pin configured to couple to a mounting hole of the disk drive (and the second pin coupled to the second suspension member, wherein the first and second pins suspend the disk drive within the drive carrier between the suspension members).
    • 计算机系统的驱动器载体。 示例性实施例中的至少一些是包括限定驱动器载体的第一侧的第一悬挂构件的驱动载体,限定驱动载体的第二侧的第二悬架构件(第二悬架构件被构造成手动地弹性地远离 在安装磁盘驱动器期间从驱动器载体),手柄具有联接到悬挂构件的铰接点(铰链点限定用于手柄的旋转轴线,并且旋转轴线基本上平行于两个 悬挂构件),构造成联接到盘驱动器(和联接到第一悬架构件的第一销)的安装孔的第一销和被配置为联接到盘驱动器的安装孔(和 第二销耦合到第二悬挂构件,其中第一和第二引脚将盘驱动器悬挂在驱动载体内的悬架构件之间)。
    • 6. 发明授权
    • Method of forming a trench schottky rectifier
    • 形成沟槽肖特基整流器的方法
    • US06518152B2
    • 2003-02-11
    • US10043633
    • 2002-01-10
    • Fwu-Iuan HshiehMax ChenKoon Chong SoYan Man Tsui
    • Fwu-Iuan HshiehMax ChenKoon Chong SoYan Man Tsui
    • H01L2128
    • H01L29/8725H01L29/872
    • A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.
    • 提供肖特基整流器。 肖特基整流器包括:(a)具有第一和第二相对面的半导体区域,半导体区域包括邻近第一面的第一导电类型的阴极区域和与第二面相邻的第一导电类型的漂移区域,以及 漂移区具有比阴极区更低的净掺杂浓度; (b)从所述第二面延伸到所述半导体区域并限定所述半导体区域内的一个或多个台面的一个或多个沟槽; (c)与沟槽下部的半导体区相邻的绝缘区; (d)和阳极电极(i)在第二面处与半导体相邻并形成肖特基整流接触,(ii)与沟槽上部的半导体区域相邻并形成肖特基整流接触,以及 (iii)与沟槽下部的绝缘区域相邻。
    • 9. 发明授权
    • Trench schottky rectifier
    • 沟槽肖特基整流器
    • US06707127B1
    • 2004-03-16
    • US09653084
    • 2000-08-31
    • Fwu-Iuan HshiehMax ChenKoon Chong SoYan Man Tsui
    • Fwu-Iuan HshiehMax ChenKoon Chong SoYan Man Tsui
    • H01L27095
    • H01L29/8725H01L29/872
    • A Schottky rectifier is provided. The Schottky rectifier comprises: (a) a semiconductor region having first and second opposing faces, with the semiconductor region comprising a cathode region of first conductivity type adjacent the first face and a drift region of the first conductivity type adjacent the second face, and with the drift region having a lower net doping concentration than that of the cathode region; (b) one or more trenches extending from the second face into the semiconductor region and defining one or more mesas within the semiconductor region; (c) an insulating region adjacent the semiconductor region in lower portions of the trench; (d) and an anode electrode that is (i) adjacent to and forms a Schottky rectifying contact with the semiconductor at the second face, (ii) adjacent to and forms a Schottky rectifying contact with the semiconductor region within upper portions of the trench and (iii) adjacent to the insulating region within the lower portions of the trench.
    • 提供肖特基整流器。 肖特基整流器包括:(a)具有第一和第二相对面的半导体区域,半导体区域包括邻近第一面的第一导电类型的阴极区域和与第二面相邻的第一导电类型的漂移区域,以及 漂移区具有比阴极区更低的净掺杂浓度; (b)从所述第二面延伸到所述半导体区域并限定所述半导体区域内的一个或多个台面的一个或多个沟槽; (c)与沟槽下部的半导体区相邻的绝缘区; (d)和阳极电极(i)在第二面处与半导体相邻并形成肖特基整流接触,(ii)与沟槽上部的半导体区域相邻并形成肖特基整流接触,以及 (iii)与沟槽下部的绝缘区域相邻。