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1. 发明申请

US20230031642A1 Germanium-Silicon-Tin (GeSiSn) Heterojunction Bipolar Transistor Devices 有权
公开(公告)号：US20230031642A1
公开(公告)日：2023-02-02
申请号：US17952343
申请日：2022-09-26
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/737 , H01L29/66 , H01L29/20 , H01L29/267 , H01L33/00 , H01L29/08 , H01L29/12 , H01L29/165 , H01L29/10
摘要： A semiconductor device having a GeSiSn base region combined with an emitter region and a collector region can be used to fabricate a bipolar transistor or a heterojunction bipolar transistor. The GeSiSn base region can be compositionally graded or latticed matched or strained to GaAs. The GeSiSn base region can be wafer bonded to a GaN or SiC collector region.

2. 发明申请

US20190296131A1 Method of Manufacture of Germanium-Silicon-Tin Heterojunction Bipolar Transistor Devices 审中-公开
公开(公告)号：US20190296131A1
公开(公告)日：2019-09-26
申请号：US16424457
申请日：2019-05-28
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/737 , H01L29/10 , H01L29/66 , H01L29/20 , H01L29/267 , H01L33/00 , H01L29/08 , H01L29/12 , H01L29/165
摘要： The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

3. 发明授权

US09437772B2 Method of manufacture of advanced heterojunction transistor and transistor laser 有权
标题翻译：先进的异质结晶体管和晶体管激光器的制造方法
公开(公告)号：US09437772B2
公开(公告)日：2016-09-06
申请号：US14217022
申请日：2014-03-17
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L33/00 , H01L29/20 , H01L29/66 , H01L29/737 , H01L29/10 , H01S5/062 , H01S5/183 , H01S5/34 , H01S5/343 , H01S5/02
CPC分类号： H01L33/0025 , H01L29/1004 , H01L29/2003 , H01L29/66242 , H01L29/7371 , H01S5/0215 , H01S5/06203 , H01S5/18341 , H01S5/3409 , H01S5/3412 , H01S5/3422 , H01S5/34306 , H01S5/34333 , H01S5/34346
摘要： Methods of manufacture of advanced heterojunction transistors and transistor lasers, and their related structures, are described herein. Other embodiments are also disclosed herein.
摘要翻译：本文描述了高级异质结晶体管和晶体管激光器的制造方法及其相关结构。本文还公开了其它实施例。

4. 发明授权

US09153937B2 Tunable device, method of manufacture, and method of tuning an electrical device 有权
标题翻译：可调谐装置，制造方法和调谐电气装置的方法
公开(公告)号：US09153937B2
公开(公告)日：2015-10-06
申请号：US14307304
申请日：2014-06-17
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01S3/10 , H01S5/06 , B82Y20/00 , H01L29/12 , H01L29/78 , H01L29/84 , H01S5/022 , H01S5/32 , H01S5/34
CPC分类号： H01S5/0607 , B82Y20/00 , H01L29/12 , H01L29/78 , H01L29/84 , H01S5/02264 , H01S5/3201 , H01S5/34
摘要： This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser. Additionally, other devices that are sensitive to stress and/or strain can be adjoined in a similar manner and can result in an electronically variable output of the devices. Examples of other embodiments are also disclosed herein.
摘要翻译：本说明书涉及一种调整半导体器件和材料，薄膜材料或其它器件的光学和/或电学参数的设备，制造方法和方法。在一个示例中，通过使用合适的附接方法将激光器耦合到调谐材料或基底，例如压电基座，来调整激光器以产生可调输出波长。激光器包括对应力和/或应变敏感的可调谐材料。从调谐材料施加到激光器的应力和/或应变导致电子可变输出波长。作为示例，向用作调谐材料的压电基底施加电压可能导致基体膨胀或收缩，并且从基底的膨胀和收缩与激光器的可调谐材料耦合，因此改变了波长从激光输出光。此外，对应力和/或应变敏感的其他器件可以以相似的方式邻接并且可以导致器件的电子可变输出。本文还公开了其它实施例的示例。

5. 发明申请

US20150014632A1 Advanced Heterojunction Devices and Methods of Manufacturing Advanced Heterojunction Devices 审中-公开
标题翻译：高级异相结合装置和制造高级异质结装置的方法
公开(公告)号：US20150014632A1
公开(公告)日：2015-01-15
申请号：US14504114
申请日：2014-10-01
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/737 , H01L29/165 , H01L29/12 , H01L29/20 , H01L29/10 , H01S5/34 , H01S5/183 , H01S5/062 , H01L29/267 , H01L29/08
CPC分类号： H01L29/7378 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/122 , H01L29/165 , H01L29/2003 , H01L29/267 , H01L29/66242 , H01L29/7371 , H01L33/0004 , H01S5/0202 , H01S5/0218 , H01S5/06203 , H01S5/3412 , H01S5/3427
摘要： Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.
摘要翻译：本文描述了包括异质结晶体管，晶体管激光器和太阳能电池及其相关结构的先进电子和光子结构的制造方法。本文还公开了其它实施例。

6. 发明授权

US08437374B1 Tunable device, method of manufacture, and method of tuning a laser 有权
标题翻译：可调谐装置，制造方法以及调谐激光器的方法
公开(公告)号：US08437374B1
公开(公告)日：2013-05-07
申请号：US12895153
申请日：2010-09-30
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01S3/10
CPC分类号： H01S5/0607 , B82Y20/00 , H01L29/12 , H01L29/78 , H01L29/84 , H01S5/02264 , H01S5/3201 , H01S5/34
摘要： This description relates to an apparatus, a method of manufacturing, and a method of tuning optical and/or electrical parameters of semiconductor devices and materials, thin film materials, or other devices. In one example, a laser is tuned to produce an adjustable output wavelength by coupling the laser to a tuning material or base such as, for example, a piezoelectric base using a suitable attachment method. The laser includes of a tunable material that is sensitive to stress and/or strain. Stress and/or strain applied to the laser from the tuning material results in an electronically variable output wavelength. As an example, applying a voltage to a piezoelectric base that serves as a tuning material can cause the base to expand or contract, and the expansions and contractions from the base are coupled to the tunable material of the laser, thus varying the wavelength of the output light from the laser. Additionally, other devices that are sensitive to stress and/or strain can be adjoined in a similar manner and can result in an electronically variable output of the devices. Examples of other embodiments are also disclosed herein.
摘要翻译：本说明书涉及一种调整半导体器件和材料，薄膜材料或其它器件的光学和/或电学参数的设备，制造方法和方法。在一个示例中，通过使用合适的附接方法将激光器耦合到调谐材料或基底，例如压电基座，来调整激光器以产生可调输出波长。激光器包括对应力和/或应变敏感的可调谐材料。从调谐材料施加到激光器的应力和/或应变导致电子可变输出波长。作为示例，向用作调谐材料的压电基底施加电压可能导致基体膨胀或收缩，并且从基底的膨胀和收缩与激光器的可调谐材料耦合，因此改变了波长从激光输出光。此外，对应力和/或应变敏感的其他器件可以以相似的方式邻接并且可以导致器件的电子可变输出。本文还公开了其它实施例的示例。

7. 发明授权

US11456374B2 Germanium-silicon-tin (GeSiSn) heterojunction bipolar transistor devices 有权
公开(公告)号：US11456374B2
公开(公告)日：2022-09-27
申请号：US16424457
申请日：2019-05-28
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/73 , H01L29/08 , H01L29/10 , H01L29/12 , H01L29/16 , H01L29/20 , H01L29/26 , H01L29/66 , H01L33/00 , H01S5/34 , H01L29/737 , H01L29/267 , H01L29/165 , H01S5/062 , H01S5/02 , H01L29/161
摘要： The methods of manufacture of GeSiSn heterojunction bipolar transistors, which include light emitting transistors and transistor lasers and photo-transistors and their related structures are described herein. Other embodiments are also disclosed herein.

8. 发明授权

US11335794B2 Advanced wafer bonded heterojunction bipolar transistors and methods of manufacture of advanced wafer bonded heterojunction bipolar transistors 有权
公开(公告)号：US11335794B2
公开(公告)日：2022-05-17
申请号：US16708093
申请日：2019-12-09
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/737 , H01L29/267 , H01L29/165 , H01L29/12 , H01L29/08 , H01L29/10 , H01L29/20 , H01L33/00 , H01L29/66 , H01L51/00 , H01S5/062 , H01S5/02 , H01S5/34
摘要： Methods of manufacturing a heterojunction bipolar transistor are described herein. An exemplary method can include providing a base/emitter stack, the base/emitter stack comprising a substrate, an etch stop layer over the substrate, an emitter contact layer over the etch stop layer, an emitter over the emitter contact layer, and/or a base over the emitter. The exemplary method further can include forming a collector. The exemplary method also can include wafer bonding the base to the collector. Other embodiments are also disclosed herein.

9. 发明申请

US20190115459A1 WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS AND METHODS OF MANUFACTURE OF WAFER BONDED GAN MONOLITHIC INTEGRATED CIRCUITS 审中-公开
公开(公告)号：US20190115459A1
公开(公告)日：2019-04-18
申请号：US16212655
申请日：2018-12-06
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L29/737 , H01L29/10 , H01L29/66 , H01L29/20 , H01L29/267 , H01L33/00 , H01L29/08 , H01L29/12 , H01L29/165
摘要： Wafer bonded GaN monolithic integrated circuits and methods of manufacture of wafer bonded GaN monolithic integrated circuits and their related structures for electronic and photonic integrated circuits and for multi-functional integrated circuits, are described herein. Other embodiments are also disclosed herein.

10. 发明授权

US09666702B2 Advanced heterojunction devices and methods of manufacturing advanced heterojunction devices 有权
公开(公告)号：US09666702B2
公开(公告)日：2017-05-30
申请号：US14504114
申请日：2014-10-01
申请人： Matthew H. Kim
发明人： Matthew H. Kim
IPC分类号： H01L33/00 , H01L29/737 , H01L29/267 , H01L29/165 , H01L29/12 , H01L29/08 , H01L29/10 , H01L29/20 , H01L29/66 , H01S5/062 , H01S5/02 , H01S5/34
CPC分类号： H01L29/7378 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/122 , H01L29/165 , H01L29/2003 , H01L29/267 , H01L29/66242 , H01L29/7371 , H01L33/0004 , H01S5/0202 , H01S5/0218 , H01S5/06203 , H01S5/3412 , H01S5/3427
摘要： Methods of manufacture of advanced electronic and photonic structures including heterojunction transistors, transistor lasers and solar cells and their related structures, are described herein. Other embodiments are also disclosed herein.

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