专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130292637A1 MULTI-QUANTUM WELL LED STRUCTURE WITH VARIED BARRIER LAYER COMPOSITION 有权
标题翻译：具有变化障碍层组成的多量子阱LED结构
公开(公告)号：US20130292637A1
公开(公告)日：2013-11-07
申请号：US13465545
申请日：2012-05-07
申请人： Mathieu Xavier Sénés , Valerie Berryman-Bousquet
发明人： Mathieu Xavier Sénés , Valerie Berryman-Bousquet
IPC分类号： H01L33/06
CPC分类号： H01L33/325 , H01L33/06 , H01L33/18
摘要： A group III nitride-based light emitting device includes an n-type group III nitride-based semiconductor layer, a p-type group III nitride-based semiconductor layer, and a group III nitride-based active region between the p-type semiconductor layer and the n-type semiconductor layer. The active region includes a plurality of sequentially stacked group III nitride-based quantum well layers interspersed with barrier layers. A plurality of the barrier layers have a variation in composition of a first element along a growth direction within a thickness of each of the plurality of barrier layers, and the variation in composition of the first element has at least one minimum and a position of the minimum varies in the plurality of barrier layers. The first element may be indium or aluminium, and the number of barrier layers including the composition variation may be at least three barrier layers. The composition variation may vary linearly or non-linearly.
摘要翻译： III族氮化物系发光器件包括n型III族氮化物基半导体层，p型III族氮化物基半导体层和在p型半导体层之间的III族氮化物基有源区和n型半导体层。有源区包括散布有阻挡层的多个依次层叠的III族氮化物基量子阱层。多个阻挡层在多个阻挡层的每一个的厚度内沿着生长方向具有第一元件的组成变化，并且第一元件的组成变化具有至少一个最小值和最小值在多个阻挡层中变化。第一元素可以是铟或铝，并且包括组成变化的阻挡层的数量可以是至少三个阻挡层。组成变化可以线性或非线性地变化。

IPRDB

热门服务

关于我们

友情链接

联系方式