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1. 发明授权

US08072306B2 Electronic component 有权
标题翻译：电子元器件
公开(公告)号：US08072306B2
公开(公告)日：2011-12-06
申请号：US12581654
申请日：2009-10-19
申请人： Shinichiro Sugiyama , Kaori Takezawa , Hiromi Miyoshi , Masayuki Yoneda
发明人： Shinichiro Sugiyama , Kaori Takezawa , Hiromi Miyoshi , Masayuki Yoneda
IPC分类号： H01F5/00
CPC分类号： H01F17/0013 , H01F27/292 , H01F27/34
摘要： A multilayer body is formed by laminating multiple insulating layers. External electrodes are provided on the opposed side surfaces of the multilayer body and extend in the z axis direction. Coil conductors are laminated together with the insulating layers and form a coil. Coil conductors other than coil conductors connected to the external electrodes are made up of pairs of adjacent coil conductors having an identical shape, and coil conductors forming each pair are connected in parallel to each other. None of the coil conductors connected to the external electrodes is connected in parallel to coil conductors with an identical shape.
摘要翻译：通过层压多个绝缘层形成多层体。外部电极设置在多层体的相对的侧表面上并沿z轴方向延伸。线圈导体与绝缘层层叠在一起并形成线圈。与外部电极连接的线圈导体以外的线圈导体由成对的具有相同形状的相邻线圈导体构成，并且形成每对的线圈导体彼此并联连接。与外部电极连接的线圈导体没有与具有相同形状的线圈导体并联连接。

2. 发明授权

US07978042B2 Electronic component 有权
公开(公告)号：US07978042B2
公开(公告)日：2011-07-12
申请号：US12581654
申请日：2009-10-19
申请人： Shinichiro Sugiyama , Kaori Takezawa , Hiromi Miyoshi , Masayuki Yoneda
发明人： Shinichiro Sugiyama , Kaori Takezawa , Hiromi Miyoshi , Masayuki Yoneda
IPC分类号： H01F5/00
摘要： A multilayer body is formed by laminating multiple insulating layers. External electrodes are provided on the opposed side surfaces of the multilayer body and extend in the z axis direction. Coil conductors are laminated together with the insulating layers and form a coil. Coil conductors other than coil conductors connected to the external electrodes are made up of pairs of adjacent coil conductors having an identical shape, and coil conductors forming each pair are connected in parallel to each other. None of the coil conductors connected to the external electrodes is connected in parallel to coil conductors with an identical shape.

3. 发明申请

US20100083765A1 PRESSURE SENSOR 有权
标题翻译：压力传感器
公开(公告)号：US20100083765A1
公开(公告)日：2010-04-08
申请号：US12574075
申请日：2009-10-06
申请人： Masayuki Yoneda , Tomohisa Tokuda
发明人： Masayuki Yoneda , Tomohisa Tokuda
IPC分类号： G01L9/06
CPC分类号： G01L9/0054 , G01L9/065
摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.
摘要翻译：根据本发明的压力传感器包括：差压隔膜; 静压膜，其设置在差压隔膜的外周部; 第一静压计对，其形成在静压隔膜的端部，并包括两个静压计，它们被设置成它们夹在压差隔膜上; 以及形成在静压隔膜的中心部分的第二静压计对，并且包括两个静压计，它们被设置成使得它们夹在差压隔膜上。

4. 发明申请

US20080202248A1 PRESSURE SENSOR 有权
标题翻译：压力传感器
公开(公告)号：US20080202248A1
公开(公告)日：2008-08-28
申请号：US12035539
申请日：2008-02-22
申请人： Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
发明人： Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
IPC分类号： G01L9/06
CPC分类号： G01L9/0042
摘要： In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.
摘要翻译：在压力传感器中，包括形成在由半导体材料制成的芯片的一部分上的隔膜，并通过电转换对应于该压力的位移来感测隔膜上的压力，提供具有至少尺寸等于通过将通过将隔膜的一侧的长度除以膜片的厚度作为水平轴而获得的纵横比设定为压力传感器的允许压力电阻的特性曲线的导数，并且通过设定容许压力作为垂直轴的压力传感器的电阻变为接近零，能够实现具有高灵敏度和高耐压性的压力传感器。

5. 发明授权

US08161820B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US08161820B2
公开(公告)日：2012-04-24
申请号：US12574075
申请日：2009-10-06
申请人： Masayuki Yoneda , Tomohisa Tokuda
发明人： Masayuki Yoneda , Tomohisa Tokuda
IPC分类号： G01L9/06
CPC分类号： G01L9/0054 , G01L9/065
摘要： A pressure sensor according to the present invention comprises: a differential pressure diaphragm; a static pressure diaphragm, which is provided to an outer perimeter part of the differential pressure diaphragm; a first static pressure gauge pair that is formed in the end part of the static pressure diaphragm and comprises two static pressure gauges, which are disposed such that they sandwich the differential pressure diaphragm; and a second static pressure gauge pair that is formed in the center part of the static pressure diaphragm and comprises two static pressure gauges which are disposed such that they sandwich the differential pressure diaphragm.
摘要翻译：根据本发明的压力传感器包括：差压隔膜; 静压膜，其设置在差压隔膜的外周部; 第一静压计对，其形成在静压隔膜的端部，并包括两个静压计，它们被设置成它们夹在压差隔膜上; 以及形成在静压隔膜的中心部分的第二静压计对，并且包括两个静压计，它们被设置成使它们夹在差压隔膜上。

6. 发明申请

US20110187486A1 ELECTRONIC COMPONENT 有权
标题翻译：电子元件
公开(公告)号：US20110187486A1
公开(公告)日：2011-08-04
申请号：US13086251
申请日：2011-04-13
申请人： Shinichiro SUGIYAMA , Kaori TAKEZAWA , Hiromi MIYOSHI , Masayuki YONEDA
发明人： Shinichiro SUGIYAMA , Kaori TAKEZAWA , Hiromi MIYOSHI , Masayuki YONEDA
IPC分类号： H01F5/00
CPC分类号： H01F17/0013 , H01F27/292 , H01F27/34 , H01F2017/004
摘要： This disclosure provides an electronic component that can suppress a decrease in the resonant frequency. The electronic component includes a multilayer body having plural insulating layers stacked in a staking direction. Outer electrodes are provided on facing lateral sides of the multilayer body and extend in the stacking direction. Coil conductors are stacked together with the insulating layers to form a coil. The thickness in the stacking direction of at least one of the coil conductors that is directly connected to one of the outer electrodes is smaller than that of the coil conductors that are not directly connected to any of the outer electrodes.
摘要翻译：本公开提供了可以抑制谐振频率降低的电子部件。该电子部件包括具有堆叠方向的多个绝缘层的多层体。外电极设置在多层体的相对的侧面上并且在层叠方向上延伸。线圈导体与绝缘层堆叠在一起以形成线圈。直接连接到一个外部电极的至少一个线圈导体的堆叠方向的厚度小于不直接连接到任何外部电极的线圈导体的厚度。

7. 发明申请

US20110001199A1 PRESSURE SENSOR AND PRESSURE SENSOR MANUFACTURING METHOD 审中-公开
标题翻译：压力传感器和压力传感器制造方法
公开(公告)号：US20110001199A1
公开(公告)日：2011-01-06
申请号：US12830787
申请日：2010-07-06
申请人： Hirofumi Tojo , Masayuki Yoneda
发明人： Hirofumi Tojo , Masayuki Yoneda
IPC分类号： H01L29/84 , H01L21/28
CPC分类号： G01L9/0054
摘要： A pressure sensor having a second semiconductor layer wherein is formed diffused resistance interconnections, an insulating layer that is formed on top of the second semiconductor layer, and external conducting portions that are formed on top of the insulating layer, wherein contacts for connecting electrically between the external conducting portions and the diffused resistance interconnections are formed in the insulating layer, and wherein the external conducting portions are formed in ranges corresponding to the ranges wherein the diffused resistance interconnections are formed in the second semiconductor layer.
摘要翻译：一种具有第二半导体层的压力传感器，其中形成有扩散电阻互连，形成在第二半导体层顶部的绝缘层和形成在绝缘层顶部的外部导电部分，外部导电部分和扩散电阻互连形成在绝缘层中，并且其中外部导电部分形成在与在第二半导体层中形成扩散电阻互连的范围相对应的范围内。

8. 发明授权

US07497126B2 Pressure sensor 有权
标题翻译：压力传感器
公开(公告)号：US07497126B2
公开(公告)日：2009-03-03
申请号：US12035539
申请日：2008-02-22
申请人： Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
发明人： Hirofumi Tojo , Masayuki Yoneda , Tomohisa Tokuda
IPC分类号： G01L9/06
CPC分类号： G01L9/0042
摘要： In a pressure sensor comprising a diaphragm formed on a portion of a chip made of semiconductor material and that senses pressure on the diaphragm by electrically converting the displacement corresponding to that pressure, the provision of the diaphragm with an aspect ratio of at least a size such that the derivative of the characteristic curve of the allowable pressure resistance of the pressure sensor, defined by setting the aspect ratio obtained by dividing the length of one side of the diaphragm by the thickness of the diaphragm as the horizontal axis and by setting the allowable pressure resistance of the pressure sensor as the vertical axis, becomes nearly zero, enables a pressure sensor having high sensitivity and high pressure resistance.
摘要翻译：在压力传感器中，包括形成在由半导体材料制成的芯片的一部分上的隔膜，并通过电转换对应于该压力的位移来感测隔膜上的压力，提供具有至少尺寸等于通过将通过将隔膜的一侧的长度除以膜片的厚度作为水平轴而获得的纵横比设定为压力传感器的允许压力电阻的特性曲线的导数，并且通过设定容许压力作为垂直轴的压力传感器的电阻变为接近零，能够实现具有高灵敏度和高耐压性的压力传感器。

9. 发明授权

US07360431B2 Pressure sensor device including a diaphragm and a stopper member having a curved surface facing the diaphragm 有权
标题翻译：压力传感器装置包括隔膜和具有面向隔膜的曲面的止挡件
公开(公告)号：US07360431B2
公开(公告)日：2008-04-22
申请号：US10567999
申请日：2004-08-20
申请人： Masayuki Yoneda , Jun Mizoguchi , Yasuhiro Kajio , Masaya Ishikawa , Youichi Azuma , Naohisa Tsuchiya
发明人： Masayuki Yoneda , Jun Mizoguchi , Yasuhiro Kajio , Masaya Ishikawa , Youichi Azuma , Naohisa Tsuchiya
IPC分类号： G01L9/12
CPC分类号： G01L19/0618 , G01L9/0051 , G01L13/026 , G01L19/0092 , G01L19/0645
摘要： The pressure sensor device has a laminated diaphragm (12) in which a strain resistance gauge is formed in a surface and a stopper member (13) including a concave portion forming a curved surface parallel to a surface formed by displacement of the diaphragm, the concave portion being disposed to face the diaphragm. Specifically, the concave portion of the stopper member is formed into a curved surface in which depth y at a distance x from the center of the diaphragm is expressed by a quartic function [y=pr4(1−x2/r2)2/64D] in relation to the operating pressure for protection against maximum pressure p when the diaphragm has a radius of r, a thickness of t, and a flexural rigidity of D.
摘要翻译：压力传感器装置具有层压隔膜（12），其中在表面形成有应变阻力计，以及止动构件（13），该阻挡构件（13）包括形成与由隔膜的位移形成的表面平行的弯曲表面的凹部，被设置为面对隔膜的部分。具体而言，止动构件的凹部形成为弯曲面，其中距离振动膜中心的距离x处的深度y由四次函数表示[y = 相对于用于防止最大压力p的操作压力，当隔膜具有半径为的最大压力p时，相对于最大压力p的操作压力相对于第二/第二/第二/ r，厚度t，弯曲刚度D.

10. 发明授权

US06581258B2 Method of forming electrode film 有权
标题翻译：电极膜形成方法
公开(公告)号：US06581258B2
公开(公告)日：2003-06-24
申请号：US09851063
申请日：2001-05-08
申请人： Masayuki Yoneda , Yoshihiro Koshido , Makoto Tose , Masatoshi Nakagawa
发明人： Masayuki Yoneda , Yoshihiro Koshido , Makoto Tose , Masatoshi Nakagawa
IPC分类号： H04R1700
CPC分类号： C23C14/5806 , C23C14/18 , C23C14/58 , C23C16/06 , C23C16/56 , H01L41/29 , H03H3/08 , Y10T29/42 , Y10T29/49128 , Y10T29/49155 , Y10T29/49156
摘要： A method of forming an electrode film using a vacuum deposition apparatus, includes the steps of depositing a refractory metal on a substrate after reaching a back pressure in a deposition chamber at a pressure that is within a range of about 1×10−4 Pa to about 5′10−3 Pa, and annealing the substrate on which the metal is deposited to decrease the electrical resistivity of the electrode film.
摘要翻译：使用真空沉积设备形成电极膜的方法包括以下步骤：在沉积室中以约1×10 -4 Pa至约5的范围内的压力达到背压后在基板上沉积难熔金属并且对其上沉积有金属的衬底退火以降低电极膜的电阻率。

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