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1. 发明授权

US09165851B2 Semiconductor device, method for manufacturing the same, power supply apparatus and high-frequency amplification unit 有权
标题翻译：半导体装置及其制造方法，电源装置及高频放大装置
公开(公告)号：US09165851B2
公开(公告)日：2015-10-20
申请号：US13597557
申请日：2012-08-29
申请人： Shirou Ozaki , Masayuki Takeda
发明人： Shirou Ozaki , Masayuki Takeda
IPC分类号： H01L29/66 , H01L23/31 , H01L29/778 , H01L29/417 , H01L29/423 , H01L29/51 , H01L29/20 , H01L23/29
CPC分类号： H01L23/3171 , H01L23/291 , H01L29/2003 , H01L29/41766 , H01L29/4236 , H01L29/517 , H01L29/66462 , H01L29/7786 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a compound semiconductor multilayer structure, a fluorine-containing barrier film that covers a surface of the compound semiconductor multilayer structure, and a gate electrode that is arranged over the compound semiconductor multilayer structure with the fluorine-containing barrier film placed the gate and the compound semiconductor multilayer structure.
摘要翻译：半导体器件包括化合物半导体多层结构，覆盖化合物半导体多层结构的表面的含氟阻挡膜和布置在化合物半导体多层结构上的栅极，其中含氟阻挡膜位于栅极和化合物半导体多层结构。

2. 发明授权

US08487384B2 Semiconductor device, power-supply unit, amplifier and method of manufacturing semiconductor device 有权
标题翻译：半导体器件，电源单元，放大器及半导体器件的制造方法
公开(公告)号：US08487384B2
公开(公告)日：2013-07-16
申请号：US13369409
申请日：2012-02-09
申请人： Norikazu Nakamura , Shirou Ozaki , Masayuki Takeda , Keiji Watanabe
发明人： Norikazu Nakamura , Shirou Ozaki , Masayuki Takeda , Keiji Watanabe
IPC分类号： H01L21/02
CPC分类号： H01L29/2003 , H01J37/32357 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/41766 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/66477 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.
摘要翻译：半导体器件包括形成在衬底上的半导体层; 形成在半导体层上的绝缘膜; 以及形成在绝缘膜上的电极。绝缘膜在半导体层侧的膜应力低于电极侧的膜应力。

3. 发明申请

US20120220105A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND METHOD OF CLEANING SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：制造半导体器件的方法和清洁半导体衬底的方法
公开(公告)号：US20120220105A1
公开(公告)日：2012-08-30
申请号：US13397837
申请日：2012-02-16
申请人： Shirou OZAKI , Masayuki Takeda , Norikazu Nakamura , Junichi Kon
发明人： Shirou OZAKI , Masayuki Takeda , Norikazu Nakamura , Junichi Kon
IPC分类号： H01L21/20 , B08B7/00 , B08B3/08
CPC分类号： H01L21/02057 , H01L21/0272 , H01L21/67057 , H01L29/66462
摘要： A method of manufacturing a semiconductor device includes: holding a semiconductor substrate with a surface inclined with respect to the vertical direction and the horizontal direction; and immersing the semiconductor substrate in a cleaning solution including an acid.
摘要翻译：制造半导体器件的方法包括：保持具有相对于垂直方向和水平方向倾斜的表面的半导体衬底; 并将半导体衬底浸入包含酸的清洗溶液中。

4. 发明申请

US20120205663A1 SEMICONDUCTOR DEVICE, POWER-SUPPLY UNIT, AMPLIFIER AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件，电源单元，放大器及制造半导体器件的方法
公开(公告)号：US20120205663A1
公开(公告)日：2012-08-16
申请号：US13369409
申请日：2012-02-09
申请人： Norikazu NAKAMURA , Shirou OZAKI , Masayuki TAKEDA , Keiji WATANABE
发明人： Norikazu NAKAMURA , Shirou OZAKI , Masayuki TAKEDA , Keiji WATANABE
IPC分类号： H01L29/20 , H01L21/335 , H01L29/778
CPC分类号： H01L29/2003 , H01J37/32357 , H01L21/28264 , H01L23/291 , H01L23/3171 , H01L29/41766 , H01L29/4236 , H01L29/42364 , H01L29/51 , H01L29/513 , H01L29/517 , H01L29/66462 , H01L29/66477 , H01L29/7786 , H01L29/7787 , H01L29/78 , H01L2224/0603 , H01L2224/48247 , H01L2224/48257 , H01L2224/48472 , H01L2224/4903 , H01L2924/181 , H01L2924/00012 , H01L2924/00
摘要： A semiconductor device, includes a semiconductor layer formed above a substrate; an insulating film formed on the semiconductor layer; and an electrode formed on the insulating film. The insulating film has a membrane stress at a side of the semiconductor layer lower than a membrane stress at a side of the electrode.
摘要翻译：半导体器件包括形成在衬底上的半导体层; 形成在半导体层上的绝缘膜; 以及形成在绝缘膜上的电极。绝缘膜在半导体层侧的膜应力低于电极侧的膜应力。

5. 发明申请

US20100190034A1 SURFACE TREATMENT, SURFACE-TREATED HEAD SLIDER OR MAGNETIC RECORDING MEDIUM, AND MAGNETIC RECORDING-REPRODUCING DEVICE 审中-公开
标题翻译：表面处理，表面处理头滑块或磁记录介质和磁记录重现装置
公开(公告)号：US20100190034A1
公开(公告)日：2010-07-29
申请号：US12565514
申请日：2009-09-23
申请人： Yoshiaki IKAI , Hiroshi Chiba , Susumu Ogata , Masayuki Takeda
发明人： Yoshiaki IKAI , Hiroshi Chiba , Susumu Ogata , Masayuki Takeda
IPC分类号： G11B5/33 , C23C16/44
CPC分类号： G11B5/8408 , G11B5/102 , G11B5/3106 , G11B5/40 , Y10T428/11
摘要： A novel technology for lowering the surface free energy is provided. A treatment surface is irradiated with ultraviolet light in a gas containing a fluorine-containing organic substance, thereby forming a coating layer on the treatment surface.
摘要翻译：提供了一种用于降低表面自由能的新技术。在含有有机物质的气体中用紫外线照射处理面，从而在处理面上形成被覆层。

6. 发明授权

US07724501B2 Electrolytic capacitor 有权
标题翻译：电解电容器
公开(公告)号：US07724501B2
公开(公告)日：2010-05-25
申请号：US11828829
申请日：2007-07-26
申请人： Masahi Ozawa , Masayuki Takeda , Makoto Ue
发明人： Masahi Ozawa , Masayuki Takeda , Makoto Ue
IPC分类号： H01G9/00
CPC分类号： H01G9/008 , H01G9/02 , H01G9/035 , H01G9/045 , H01G9/151 , Y10T29/41 , Y10T29/417
摘要： An electrolytic capacitor having a low impedance characteristic, having a high withstand voltage characteristic of 100V class, wherein the electrolytic capacitor provides an excellent high temperature life characteristic and an excellent leakage characteristic. The electrolyte solution containing the aluminum tetrafluoride salt is used. The electrolytic capacitor of the present invention has a low impedance characteristic, a high withstand voltage characteristic, and an excellent high temperature life characteristic. Moreover, the aforementioned electrolyte solution is used, and a foil showing noble potential at least in the electrolyte solution than the electrode potential of the cathode tab, or a cathode electrode foil subjected to chemical treatment is used as the cathode electrode foil, so as to obtain an excellent leakage characteristic.
摘要翻译：具有低阻抗特性的电解电容器具有100V等级的高耐压特性，其中电解电容器提供优异的高温寿命特性和优异的泄漏特性。使用含有四氟化铝盐的电解液。本发明的电解电容器具有低阻抗特性，高耐压特性和优异的高温寿命特性。此外，使用上述电解质溶液，并且使用至少在电解质溶液中显示比阴极片的电极电位或具有化学处理的阴极箔的电位高的箔作为阴极电极箔，以便获得极好的泄漏特性。

7. 发明授权

US07492572B2 Electrolytic capacitor manufacturing method 有权
标题翻译：电解电容器制造方法
公开(公告)号：US07492572B2
公开(公告)日：2009-02-17
申请号：US10534155
申请日：2003-11-07
申请人： Masashi Ozawa , Masayuki Takeda , Makoto Ue
发明人： Masashi Ozawa , Masayuki Takeda , Makoto Ue
IPC分类号： H01G9/00 , H01G4/228
CPC分类号： H01G9/028 , H01G9/022
摘要： An electrolytic capacitor having a low impedance characteristic, having a high withstand voltage characteristic of 100V class, wherein the electrolytic capacitor provides an excellent high temperature life characteristic.The electrolyte solution containing the aluminum tetrafluoride salt is used. The moisture content of the capacitor element is adjusted to 0.7% by weight or less, wit respect to the weight of the capacitor element, preferably 0.5% by weight or less, and most preferably 0.4% by weight or less. In this way, the electrolytic capacitor having the low impedance characteristic and the high resistance voltage characteristic, and the excellent high temperature life characteristic is provided.
摘要翻译：一种具有低阻抗特性的电解电容器，具有100V等级的高耐压特性，其中电解电容器具有优异的高温寿命特性。使用含有四氟化铝盐的电解液。电容器元件的含水量相对于电容器元件的重量为0.7重量％以下，优选为0.5重量％以下，最优选为0.4重量％以下。以这种方式，提供具有低阻抗特性和高电阻电压特性的电解电容器以及优异的高温寿命特性。

8. 发明申请

US20090034160A1 ELECTROLYSIS SOLUTION FOR ELECTROLYTIC CAPACITOR, AND ELECTROLYTIC CAPACITOR 有权
标题翻译：电解电容器和电解电容器的电解液
公开(公告)号：US20090034160A1
公开(公告)日：2009-02-05
申请号：US12088696
申请日：2006-09-29
申请人： Masayuki Takeda , Hiroo Miyauchi , Masashi Ozawa
发明人： Masayuki Takeda , Hiroo Miyauchi , Masashi Ozawa
IPC分类号： H01G9/035
CPC分类号： H01G9/035 , H01G9/145
摘要： Provided is an electrolyte containing tetrafluoroaluminate ions, which is advantageous in that the electrolyte can be prevented from leaking from both the cathode and the anode in an electrolytic capacitor.An electrolyte for electrolytic capacitor, which comprises: (A) a tetrafluoroaluminate ion, and (B) at least one compound selected from the group consisting of: (1) at least one compound selected from the group consisting of a phthalimide, a quinoline, a dioxime, a nitrophenol and an amino group-containing aromatic carboxylic acid; (2) at least one compound selected from the group consisting of an aluminum complex, a boric acid ester and a silicic acid ester; (3) at least one compound selected from the group consisting of a monocyclic quinone compound and a bicyclic quinone compound; (4) a tricyclic or higher polycyclic quinone compound; and (5) at least one compound selected from a heteropoly acid and a salt thereof, an electrolyte for electrolytic capacitor containing a tetrafluoroaluminate ion, which has a self-potential of −0.95 V or more with respect to aluminum in the electrolyte, relative to an I3−/I− reference electrode, and an electrolytic capacitor using the same.
摘要翻译：提供了含有四氟铝酸盐离子的电解质，其优点在于可以防止电解质在电解电容器中从阴极和阳极泄漏。 1.一种电解电容器用电解质，其特征在于：（A）四氟铝酸盐离子，（B）至少一种选自下述的化合物：（1）至少一种选自邻苯二甲酰亚胺，喹啉，二肟，硝基苯酚和含氨基的芳族羧酸; （2）至少一种选自铝络合物，硼酸酯和硅酸酯的化合物; （3）至少一种选自单环醌化合物和双环醌化合物的化合物; （4）三环或更高级多环醌化合物; 和（5）选自杂多酸及其盐中的至少一种化合物，含有四氟铝酸盐离子的电解电容器用电解质，相对于电解液中的铝，其自身电位为-0.95V以上 I3- / I-参比电极和使用该电极的电解电容器。

9. 发明授权

US07430108B2 Electrolyte for electrolytic capacitor and electrolytic capacitor containing the same 有权
标题翻译：电解液用于电解电容器和含有电解电容器
公开(公告)号：US07430108B2
公开(公告)日：2008-09-30
申请号：US10533918
申请日：2003-11-07
申请人： Masashi Ozawa , Minoru Wada , Masayuki Takeda , Makoto Ue
发明人： Masashi Ozawa , Minoru Wada , Masayuki Takeda , Makoto Ue
IPC分类号： H01G9/00
CPC分类号： H01G9/028 , H01G9/022 , Y10T29/41 , Y10T29/417
摘要： Electrolyte solution and an electrolytic capacitor using it having a low impedance characteristic, having a high withstand voltage characteristic of 100V class, and a high temperature life characteristic is provided. The electrolyte solution containing an aluminum tetrafluoride salt, and a solvent with high boiling point, such as sulfolane, 3-methyl sulfolane, and 2,4-dimethyl sulfolane, and the like are used. The electrolytic capacitor of the present invention has a low impedance characteristic, a high withstand voltage characteristic, and an excellent high temperature life characteristic.
摘要翻译：提供了具有低阻抗特性的电解液和使用它的电解电容器，具有100V级的高耐压特性和高温寿命特性。使用含有四氟化铝盐和高沸点溶剂的电解液，如环丁砜，3-甲基环丁砜，2,4-二甲基环丁砜等。本发明的电解电容器具有低阻抗特性，高耐压特性和优异的高温寿命特性。

10. 发明申请

US20080081220A1 Magnetic disk drive having a surface coating on a magnetic disk 审中-公开
公开(公告)号：US20080081220A1
公开(公告)日：2008-04-03
申请号：US11985414
申请日：2007-11-15
申请人： Keiji Watanabe , Hiroshi Chiba , Eishin Yamakawa , Tsukasa Itani , Norikazu Nakamura , Shoichi Suda , Masayuki Takeda , Kazuaki Kurihara
发明人： Keiji Watanabe , Hiroshi Chiba , Eishin Yamakawa , Tsukasa Itani , Norikazu Nakamura , Shoichi Suda , Masayuki Takeda , Kazuaki Kurihara
IPC分类号： G11B5/725
CPC分类号： C23C14/024 , C23C14/0605 , G11B5/725 , G11B5/8408 , Y10T428/1164
摘要： A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

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