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1. 发明授权

US08368036B2 Ion implantation method and ion implantation apparatus 有权
标题翻译：离子注入法和离子注入装置
公开(公告)号：US08368036B2
公开(公告)日：2013-02-05
申请号：US13128414
申请日：2009-08-31
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/1472 , H01J2237/31706 , H01L21/26586 , H01L29/6659
摘要： An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.
摘要翻译：可以在衬底的表面内形成圆形注入区域和围绕它的周边注入区域并且其剂量不同于圆形注入区域的离子注入方法等，而不使用步骤基板的旋转。离子注入方法通过使离子束4的扫描速度可变，形成圆周注入区域和围绕其的外围注入区域，并且其剂量不同于衬底表面内的圆形注入区域的量根据基板在Y方向上的位置，在每个单向扫描或每次往复扫描中改变基板的表面内的离子束在X方向上的扫描速度分布。

2. 发明申请

US20120104285A9 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入方法和离子植入装置
公开(公告)号：US20120104285A9
公开(公告)日：2012-05-03
申请号：US13128414
申请日：2009-08-31
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1472 , H01J2237/31706 , H01L21/26586 , H01L29/6659
摘要： An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.
摘要翻译：可以在衬底的表面内形成圆形注入区域和围绕它的周边注入区域并且其剂量不同于圆形注入区域的离子注入方法等，而不使用步骤基板的旋转。离子注入方法通过使离子束4的扫描速度可变，形成圆周注入区域和围绕其的周边注入区域，并且其剂量不同于衬底表面内的圆形注入区域的量根据基板在Y方向上的位置，对于每个单向扫描或每次往复扫描，改变基板的表面内的离子束在X方向上的扫描速度分布。

3. 发明申请

US20110215263A1 ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS 有权
标题翻译：离子植入方法和离子植入装置
公开(公告)号：US20110215263A1
公开(公告)日：2011-09-08
申请号：US13128414
申请日：2009-08-31
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： H01J37/317 , H01L21/265
CPC分类号： H01J37/3171 , H01J37/1472 , H01J2237/31706 , H01L21/26586 , H01L29/6659
摘要： An ion implantation method and the like by which a circular implantation region and a peripheral implantation region surrounding it and the dose amount of which is different from that of the circular implantation region can be formed within the surface of the substrate without the use of the step rotation of the substrate. The ion implantation method is forms a circular implantation region and a peripheral implantation region surrounding it and a dose amount of which is different from that of the circular implantation region within a surface of the substrate by making variable a scanning speed of the ion beam 4 within the surface of the substrate and changing a scanning speed distribution, in an X direction, of the ion beam within the surface of the substrate for each one-way scanning or each reciprocative scanning, according to a position of the substrate in a Y direction.
摘要翻译：可以在衬底的表面内形成圆形注入区域和围绕它的周边注入区域并且其剂量不同于圆形注入区域的离子注入方法等，而不使用步骤基板的旋转。离子注入方法通过使离子束4的扫描速度可变，形成圆周注入区域和围绕其的外围注入区域，并且其剂量不同于衬底表面内的圆形注入区域的量根据基板在Y方向上的位置，在每个单向扫描或每次往复扫描中改变基板的表面内的离子束在X方向上的扫描速度分布。

4. 发明授权

US07935946B2 Ion implantation method and apparatus 有权
标题翻译：离子注入方法和装置
公开(公告)号：US07935946B2
公开(公告)日：2011-05-03
申请号：US12369307
申请日：2009-02-11
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： A61N5/00 , G21G5/00
CPC分类号： H01L21/265 , H01J37/20 , H01J37/304 , H01J37/3171 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/20235 , H01J2237/31703
摘要： Using a beam current of an ion beam, a dose amount to a substrate, and a reference scan speed, a scan number of the substrate is calculated as an integer value in which digits after a decimal point are truncated. If the scan number is smaller than 2, the process is aborted. If the scan number is equal to or larger than 2, it is determined whether the scan number is even or odd. If the scan number is even, the current scan number is set as a practical scan number. If the scan number is odd, an even scan number which is smaller by 1 than the odd scan number is obtained, and the obtained even scan number is set as a practical scan number. A practical scan speed of the substrate is calculated by using the practical scan number, the beam current, and the dose amount.
摘要翻译：使用离子束的束电流，对基板的剂量量和参考扫描速度，计算基板的扫描编号，其中小数点后的数字被截断的整数值。如果扫描次数小于2，则中止该过程。如果扫描次数等于或大于2，则确定扫描号是偶数还是奇数。如果扫描号为偶数，则将当前扫描号设置为实际的扫描号。如果扫描数是奇数，则获得比奇数扫描数小1的偶数扫描数，将所得到的偶数扫描数设定为实际扫描次数。通过使用实际扫描数，束电流和剂量来计算基板的实际扫描速度。

5. 发明申请

US20100084584A1 ION IMPLANTING APPARATUS 失效
标题翻译：离子植入装置
公开(公告)号：US20100084584A1
公开(公告)日：2010-04-08
申请号：US12545543
申请日：2009-08-21
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： H01J37/22 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/22 , H01J37/222 , H01J2237/202 , H01J2237/20292 , H01J2237/221 , H01J2237/226 , H01J2237/2482
摘要： An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits the light guided by the light guide; a light receiving portion which is attached to a support table of a holder driving device, and which receives the light emitted from the light projecting portion in a state where a holder is positioned in a notch detecting position; a light guide which guides the light received by the light receiving portion; and a light emitting device which is attached to the support table, and which irradiates an outer circumferential portion of a substrate with the light guided by the light guide.
摘要翻译：照明装置包括：设置在真空室外的光源; 将从光源发射的光引导到真空室中的导光体; 一个固定在真空室中并发射由光导引导的光的光投射部分; 光接收部，其安装在保持器驱动装置的支撑台上，并且在保持器位于切口检测位置的状态下接收从所述光投射部发射的光; 引导由光接收部接收的光的导光体; 以及发光装置，其附接到支撑台，并且利用由光导引导的光来照射基板的外周部。

6. 发明授权

US08519363B2 Wafer handling method and ion implanter 失效
标题翻译：晶圆处理方法和离子注入机
公开(公告)号：US08519363B2
公开(公告)日：2013-08-27
申请号：US12938856
申请日：2010-11-03
申请人： Kohei Tanaka , Takashi Nogami , Masayoshi Hino
发明人： Kohei Tanaka , Takashi Nogami , Masayoshi Hino
IPC分类号： H01J37/22 , H01J37/20 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/20 , H01J2237/204 , H01J2237/2482 , H01L21/67259 , H01L21/681 , H01L21/68742
摘要： An ion implanter performs ion implantation by irradiating a wafer having a notch at its outer peripheral region by an ion beam. In ion implanter, a twist angle adjustment mechanism is configured to adjust a twist angle, an aligner is configured to adjust an alignment angle, a wafer transfer device is configured to transfer the wafer between the aligner and the twist angle adjustment mechanism, an image processing device is configured to detect the twist angle of the wafer on the twist angle adjustment mechanism, and a control device is configured to carry out a twist control in which the wafer is rotated by the twist angle adjustment mechanism by an angle obtained from a first difference between the detected twist angle and the alignment angle and a second difference between the alignment angle and a target twist angle given as one of ion implantation conditions.
摘要翻译：离子注入机通过离子束在其外周区域照射具有凹口的晶片来进行离子注入。在离子注入机中，扭转角度调节机构被配置为调节扭曲角度，对准器被配置为调整对准角度，晶片传送装置构造成在对准器和扭转角调节机构之间传送晶片，图像处理装置被配置为检测扭转角度调节机构上的晶片的扭曲角度，并且控制装置被配置为执行扭转控制，其中晶片由扭转角调节机构旋转角度从第一差异在检测到的扭转角和对准角之间，以及作为离子注入条件之一给出的对准角和目标扭转角之间的第二差。

7. 发明申请

US20110235251A1 ULTRASONIC DIAGNOSIS APPARATUS 有权
标题翻译：超声诊断装置
公开(公告)号：US20110235251A1
公开(公告)日：2011-09-29
申请号：US13122480
申请日：2009-12-18
申请人： Masao Kimura , Masayoshi Hino , Tatsusi Chihara , Yasuhiro Nakamura , Isamu Takagi , Erina Komatsu
发明人： Masao Kimura , Masayoshi Hino , Tatsusi Chihara , Yasuhiro Nakamura , Isamu Takagi , Erina Komatsu
IPC分类号： H05K5/00
CPC分类号： A61B8/467 , A61B8/44 , A61B8/4427 , A61B8/462 , A61B8/463 , G01S7/52079 , G01S7/52082 , G06F1/162 , G06F1/1643 , G06F1/1656 , G06F1/203 , Y10S248/917
摘要： A technique which in a portable or laptop ultrasonic diagnosis apparatus, optimizes the position of a hinge mechanism for connecting a display section having a touch panel and a main body and the strength of the main body and also reduce the influence of noise between mutual sections, such as an ultrasonic image processing circuit board, a power source, a CPU board and the like, which are arranged inside the main body is disclosed. According to this technique, on a bottom surface of a bottom case 11 in the main body, a supporting section 12 for supporting a display section 20 is formed to stand upright and extend in a width direction, at a position that is dislocated to a front end F side from a rear end R of a main body 10. Also, a region A in which the ultrasonic image processing circuit board is arranged and regions B, C in which a power source unit and the CPU board are arranged, respectively, are partitioned by means of the supporting section 12.
摘要翻译：一种便携式或笔记本式超声波诊断装置中的技术，优化用于连接具有触摸面板和主体的显示部分的铰链机构的位置和主体的强度，并且还减少相互部分之间的噪声的影响，公开了设置在主体内的超声波图像处理电路基板，电源，CPU板等。根据该技术，在主体的底壳11的底面上形成有用于支撑显示部20的支撑部12，从而在宽度方向上位于前方的位置另外，分别配置有超声波图像处理电路基板的区域A和布置有电源单元和CPU基板的区域B，C分别为：通过支撑部分12分隔开。

8. 发明授权

US08749964B2 Ultrasonic diagnosis apparatus 有权
标题翻译：超声诊断仪
公开(公告)号：US08749964B2
公开(公告)日：2014-06-10
申请号：US13122480
申请日：2009-12-18
申请人： Masao Kimura , Masayoshi Hino , Tatsusi Chihara , Yasuhiro Nakamura , Isamu Takagi , Erina Komatsu
发明人： Masao Kimura , Masayoshi Hino , Tatsusi Chihara , Yasuhiro Nakamura , Isamu Takagi , Erina Komatsu
IPC分类号： G06F3/01 , G01S7/52 , A61B8/00 , G06F1/16 , G06F1/20
CPC分类号： A61B8/467 , A61B8/44 , A61B8/4427 , A61B8/462 , A61B8/463 , G01S7/52079 , G01S7/52082 , G06F1/162 , G06F1/1643 , G06F1/1656 , G06F1/203 , Y10S248/917
摘要： A technique which in a portable or laptop ultrasonic diagnosis apparatus, optimizes the position of a hinge mechanism for connecting a display section having a touch panel and a main body and the strength of the main body and also reduce the influence of noise between mutual sections, such as an ultrasonic image processing circuit board, a power source, a CPU board and the like, which are arranged inside the main body is disclosed. According to this technique, on a bottom surface of a bottom case 11 in the main body, a supporting section 12 for supporting a display section 20 is formed to stand upright and extend in a width direction, at a position that is dislocated to a front end F side from a rear end R of a main body 10. Also, a region A in which the ultrasonic image processing circuit board is arranged and regions B, C in which a power source unit and the CPU board are arranged, respectively, are partitioned by means of the supporting section 12.
摘要翻译：一种便携式或笔记本式超声波诊断装置中的技术，优化用于连接具有触摸面板和主体的显示部分的铰链机构的位置和主体的强度，并且还减少相互部分之间的噪声的影响，公开了设置在主体内的超声波图像处理电路基板，电源，CPU板等。根据该技术，在主体的底壳11的底面上形成有用于支撑显示部20的支撑部12，从而在宽度方向上位于前方的位置另外，分别配置有超声波图像处理电路基板的区域A和布置有电源单元和CPU基板的区域B，C分别为：通过支撑部分12分隔开。

9. 发明授权

US08153995B2 Ion implanting apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US08153995B2
公开(公告)日：2012-04-10
申请号：US12545543
申请日：2009-08-21
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： H01J37/22 , H01J37/20
CPC分类号： H01J37/3171 , H01J37/20 , H01J37/22 , H01J37/222 , H01J2237/202 , H01J2237/20292 , H01J2237/221 , H01J2237/226 , H01J2237/2482
摘要： An illuminating device includes: a light source which is disposed outside a vacuum chamber; a light guide which guides the light emitted from the light source, into the vacuum chamber; a light projecting portion which is fixed in the vacuum chamber, and which emits the light guided by the light guide; a light receiving portion which is attached to a support table of a holder driving device, and which receives the light emitted from the light projecting portion in a state where a holder is positioned in a notch detecting position; a light guide which guides the light received by the light receiving portion; and a light emitting device which is attached to the support table, and which irradiates an outer circumferential portion of a substrate with the light guided by the light guide.
摘要翻译：照明装置包括：设置在真空室外的光源; 将从光源发射的光引导到真空室中的导光体; 一个固定在真空室中并发射由光导引导的光的光投射部分; 光接收部，其安装在保持器驱动装置的支撑台上，并且在保持器位于切口检测位置的状态下接收从所述光投射部发射的光; 引导由光接收部接收的光的导光体; 以及发光装置，其附接到支撑台，并且利用由光导引导的光来照射基板的外周部。

10. 发明申请

US20090200491A1 ION IMPLANTATION METHOD AND APPARATUS 有权
标题翻译：离子植入方法和装置
公开(公告)号：US20090200491A1
公开(公告)日：2009-08-13
申请号：US12369290
申请日：2009-02-11
申请人： Masayoshi Hino
发明人： Masayoshi Hino
IPC分类号： A61N5/00
CPC分类号： H01L21/265 , H01J37/20 , H01J37/304 , H01J37/3171 , H01J2237/20207 , H01J2237/20214 , H01J2237/20228 , H01J2237/20235 , H01J2237/31703
摘要： Using a beam current of an ion beam, and a dose amount to a substrate, and an initial value of a scan number of the substrate set to 1, a scan speed of the substrate is calculated. If the scan speed is within the range, the current scan number and the current scan speed are set as a practical scan number and a practical scan speed, respectively. If the scan speed is higher than the upper limit of the range, the calculation process is aborted. If the scan speed is lower than the lower limit of the range, the scan number is incremented by one to calculate a corrected scan number. A corrected scan speed is calculated by using the corrected scan number, etc. The above steps are repeated until the corrected scan speed is within the allowable scan speed range.
摘要翻译：使用离子束的束电流和对衬底的剂量，将衬底的扫描次数的初始值设定为1，计算衬底的扫描速度。如果扫描速度在该范围内，则将当前扫描次数和当前扫描速度分别设定为实际扫描次数和实际扫描速度。如果扫描速度高于该范围的上限，则中止计算过程。如果扫描速度低于该范围的下限，则将扫描数增加1以计算校正的扫描数。通过使用校正的扫描数等来计算校正的扫描速度。重复上述步骤，直到校正的扫描速度在允许的扫描速度范围内。

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