会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • Exposure Apparatus, Exposure Method, and Device Manufacturing Method
    • 曝光装置,曝光方法和装置制造方法
    • US20090226846A1
    • 2009-09-10
    • US11887182
    • 2006-03-30
    • Katsushi NakanoMasato Hamatani
    • Katsushi NakanoMasato Hamatani
    • G03F7/20G03B27/52
    • G03F7/70716G03F7/70341
    • An exposure apparatus (EX) includes: a substrate stage (ST1) that is movable while holding substrate (P); a first immersion mechanism (1) that fills an optical path space (K1) between a final optical member (LS1) and the substrate stage (ST1) with a liquid (LQ) when the substrate stage (ST1) is disposed opposite the final optical member (LS1) that is closest to the image plane of the projection optical system (PL); a measurement stage (ST2) in which the optical path space (K1) with the final optical member (LS1) is filled with the liquid (LQ) when the measurement stage (ST2) is disposed in place of the substrate stage (ST1) opposite the final optical member (LS1) in the projection optical system; a measuring device (60) that has an upper plate (65) that is disposed on the measurement stage (ST2), and that carries out specific measurements when the upper plate (65) is disposed opposite the final optical member (LS1) of the projection optical system with the liquid (LQ) held therebetween; and a second immersion mechanism (2) that forms an immersion region (LR2) on the upper plate (65) at least when the measurement stage (ST2) has moved away from the final optical member (LS1) in the projection optical system.
    • 曝光装置(EX)包括:能够在保持基板(P)的同时移动的基板载台(ST1)。 当衬底台(ST1)与最终光学相对设置时,用液体(LQ)填充最终光学构件(LS1)和衬底台(ST1)之间的光路空间(K1)的第一浸没机构(1) 最靠近投影光学系统(PL)的图像平面的构件(LS1); 测量台(ST2),其中当设置测量台(ST2)代替相对的基板台(ST1)时,具有最终光学构件(LS1)的光路空间(K1)填充有液体(LQ) 投影光学系统中的最终光学构件(LS1); 测量装置(60),其具有设置在测量台(ST2)上的上板(65),并且当上板(65)与所述上板(65)的最终光学构件(LS1)相对设置时,进行特定测量 投影光学系统与液体(LQ)保持在其间; 以及至少当测量台(ST2)已经远离投影光学系统中的最终光学构件(LS1)移动时,在上板(65)上形成浸没区域(LR2)的第二浸没机构(2)。
    • 5. 再颁专利
    • Scanning exposure apparatus
    • 扫描曝光装置
    • USRE37309E1
    • 2001-08-07
    • US09112380
    • 1998-07-09
    • Toshiharu NakashimaMasato HamataniKen Ozawa
    • Toshiharu NakashimaMasato HamataniKen Ozawa
    • G02B2700
    • G03F7/70075G03F7/70358G03F7/70575G03F7/70583
    • A projection exposure apparatus for transferring a pattern formed on a mask onto a photosensitive substrate by a scanning exposure method, includes a light source for generating a light beam having a predetermined spatial coherence, an illumination optical system for receiving the light beam from the light source and illuminating a local area on the mask with the light beam, and a device for synchronously moving the mask and the photosensitive substrate so as to transfer the pattern on the mask onto the photosensitive substrate. A direction, corresponding to a higher spatial coherence of the light beam, is made to coincide with the direction of relative scanning an illumination area and the mask in the illumination area.
    • 用于通过扫描曝光方法将形成在掩模上的图案转印到感光基板上的投影曝光装置包括:用于产生具有预定空间相干性的光束的光源;用于接收来自光源的光束的照明光学系统 以及用光束照射掩模上的局部区域,以及用于同步移动掩模和感光基板以将掩模上的图案转印到感光基板上的装置。 对应于光束的较高空间相干性的方向与照明区域中的照明区域和掩模的相对扫描方向一致。
    • 6. 发明授权
    • Semiconductor exposure device
    • 半导体曝光装置
    • US6128030A
    • 2000-10-03
    • US13944
    • 1998-01-27
    • Hiroki KikuchiYushi KanedaMasato Hamatani
    • Hiroki KikuchiYushi KanedaMasato Hamatani
    • G03F7/20H01L21/027H01S3/10H01S3/109H01S3/11B41J2/47
    • G03F7/70575G03F7/70091G03F7/70208G03F7/70583
    • A semiconductor light exposure device reducing coherency of laser light to an appropriate value by a simplified structure without producing speckles. The semiconductor light exposure device includes an ultraviolet light generating device, a uniform illumination device having the operation of inducing an optical path length difference and a projection device for projecting the laser light from the uniform illumination device. The ultraviolet light generating device includes an Nd:YAG Q-switch laser unit with a wavelength of 1064 nm, oscillated with a longitudinal single mode, a phase modulation unit or phase-modulating the fundamental laser light outgoing from the Nd:YAG Q-switch laser unit with voltage signals having plural frequency components, and a wavelength conversion unit for converting the wavelength of the fundamental laser light phase-modulated by the phase modulation unit into an ultraviolet laser light with a wavelength of 213 nm as a fifth harmonics.
    • 半导体曝光装置通过简化的结构将激光的相干性降低到适当的值,而不产生斑点。 半导体曝光装置包括紫外线发生装置,具有诱导光程长度差的操作的均匀照明装置和用于投射来自均匀照明装置的激光的投影装置。 紫外线发生装置具有波长为1064nm的Nd:YAG Q开关激光单元,以纵向单模振荡,相位调制单元或相位调制从Nd:YAG Q开关输出的基本激光 具有多个频率分量的电压信号的激光单元和用于将由相位调制单元相位调制的基波激光的波长转换为波长为213nm的紫外激光作为五次谐波的波长转换单元。