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1. 发明授权

US08084611B2 Process for preparing tetrahydroquinoline derivatives 有权
标题翻译：制备四氢喹啉衍生物的方法
公开(公告)号：US08084611B2
公开(公告)日：2011-12-27
申请号：US12295618
申请日：2007-03-29
申请人： Masaki Okamoto , Akira Sakuragi , Yoshikazu Mori , Takeshi Hamada , Hitoshi Kubota , Yoshinori Nakamura , Takanori Higashijima , Norimitsu Hayashi
发明人： Masaki Okamoto , Akira Sakuragi , Yoshikazu Mori , Takeshi Hamada , Hitoshi Kubota , Yoshinori Nakamura , Takanori Higashijima , Norimitsu Hayashi
IPC分类号： C07D215/38
CPC分类号： C07D215/42 , C07D215/233
摘要： The present invention is to provide a process for preparing optically active tetrahydroquinoline derivatives which can be used for the treatment and/or prevention of diseases such as arteriosclerotic diseases, dyslipidemia and the like, and a process for preparing synthetic intermediates thereof.Specifically, (2R,4S)-2-ethyl-6-trifluoromethyl-1,2,3,4-tetrahydroquinolin-4-ylamine or a salt thereof is prepared with fewer steps without using an optical resolution, and the optically active tetrahydroquinoline derivatives are obtained from the amine compound.
摘要翻译：本发明提供一种可用于治疗和/或预防动脉硬化疾病，血脂异常等疾病的光学活性四氢喹啉衍生物的方法及其合成中间体的制备方法。具体地说，（2R，4S）-2-乙基-6-三氟甲基-1,2,3,4-四氢喹啉-4-基胺或其盐在不使用光学拆分的情况下以较少的步骤制备，并且光学活性的四氢喹啉衍生物由胺化合物得到。

2. 发明申请

US20110196157A1 OPTICALLY ACTIVE CYCLIC ALCOHOL COMPOUND AND METHOD FOR PREPARING THE SAME 有权
标题翻译：光学活性循环酒精化合物及其制备方法
公开(公告)号：US20110196157A1
公开(公告)日：2011-08-11
申请号：US13087588
申请日：2011-04-15
申请人： Masaki OKAMOTO , Akira SAKURAGI , Yoshikazu MORI , Muneki KISHIDA
发明人： Masaki OKAMOTO , Akira SAKURAGI , Yoshikazu MORI , Muneki KISHIDA
IPC分类号： C07D401/04
CPC分类号： C07D215/233 , B01J31/0252 , B01J31/146 , B01J31/1805 , B01J31/2295 , B01J2231/64 , B01J2231/643 , B01J2531/821 , C07B53/00 , C07D215/22 , C07D401/04 , Y02P20/55
摘要： The present invention relates to a method for preparing an optically active cyclic alcohol compound represented by general formula [I]: [wherein R represents a hydrogen atom or a protecting group for amino group, and * represents an asymmetric carbon atom.] which comprises a step of subjecting a cyclic ketone compound represented by general formula [II]: [wherein R has the same meaning as defined above.] to asymmetric reduction (A) in the presence of an optically active oxazaborolidine compound and a boron hydride compound, or (B) in the presence of an asymmetric transition metal complex obtained from a transition metal compound and an asymmetric ligand and a hydrogen donor, and relates to said compound.
摘要翻译：本发明涉及一种由通式[I]表示的光学活性环状醇化合物的制备方法：[其中R表示氢原子或氨基保护基，*表示不对称碳原子]，其包含在光学活性的恶唑硼烷化合物和硼氢化合物的存在下，将不饱和还原（A）进行不饱和还原（A）的步骤：（其中R具有与上述定义相同的含义） B）在由过渡金属化合物和不对称配体和氢供体获得的不对称过渡金属络合物的存在下，涉及所述化合物。

3. 发明申请

US20100248541A1 SHIELD CONNECTOR 失效
标题翻译：屏蔽连接器
公开(公告)号：US20100248541A1
公开(公告)日：2010-09-30
申请号：US12725634
申请日：2010-03-17
申请人： Masaki Okamoto
发明人： Masaki Okamoto
IPC分类号： H01R13/648
CPC分类号： H01R13/648 , H01R13/504 , H01R43/24
摘要： A shield connector (C) includes a tubular metallic shield shell (30) integrally attached to the outer circumferential surface of a housing (10) made of resin by insert molding. The shield shell (30) is formed with a cut (32) extending between opposite ends in a longitudinal direction, and a pair of opening preventing pieces (34A, 34B) which extend radially inward or outward, circumferentially face each other and can come into contact with each other when edges (33A, 33B) at the opposite sides of the cut (32) are displaced in directions away from each other are provided on the opposite edges (33A, 33B) of the shield shell 30 facing each other with the cut (32) therebetween.
摘要翻译：屏蔽连接器（C）包括通过插入成型一体地附接到由树脂制成的壳体（10）的外周表面的管状金属屏蔽壳（30）。屏蔽壳30形成有在长度方向的相对端之间延伸的切口（32），并且一对径向向内或向外延伸的开口防止件（34A，34B）彼此周向地面对，并且可以进入在屏蔽壳30的彼此面对的相对边缘（33A，33B）上设置有在切割部（32）的相对侧上的边缘（33A，33B）彼此偏离的方向上彼此相对的方式彼此接触，在它们之间切割（32）。

4. 发明授权

US07378340B2 Method of manufacturing semiconductor device and semiconductor device 失效
标题翻译：制造半导体器件和半导体器件的方法
公开(公告)号：US07378340B2
公开(公告)日：2008-05-27
申请号：US11346890
申请日：2006-02-03
申请人： Yoshiyuki Enomoto , Hiroyuki Kawashima , Masaki Okamoto
发明人： Yoshiyuki Enomoto , Hiroyuki Kawashima , Masaki Okamoto
IPC分类号： H01L27/15
CPC分类号： H01L23/53295 , H01L21/76808 , H01L21/76811 , H01L21/76813 , H01L21/76814 , H01L21/76829 , H01L21/76832 , H01L21/76835 , H01L21/76838 , H01L23/5226 , H01L23/53238 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a method of manufacturing a semiconductor device and a semiconductor device that allow use of interlayer and interconnect insulating films having a low dielectric constant in forming a dual damascene structure. A first insulating film, a second insulating film, a first-mask forming layer, a second-mask forming layer, a third-mask forming layer, and a fourth-mask forming layer are sequentially deposited over a substrate. The fourth-mask forming layer is patterned to form a fourth mask having an interconnect trench pattern. After a resist mask is formed on the fourth mask, the layers to the second insulating film are etched to open via holes. The third-mask forming layer is etched through the fourth mask to thereby form a third mask having the interconnect trench pattern and to extend the via holes downward partway across the first insulating film. The second-mask forming layer is etched through the fourth mask to thereby form a second mask having the interconnect trench pattern, and the first insulating film that remains under the bottoms of the via holes is removed. Subsequently, the second insulating film is etched through the second mask to thereby form an interconnect trench, and then the second mask is removed.
摘要翻译：本发明提供一种制造半导体器件和半导体器件的方法，该半导体器件和半导体器件允许在形成双镶嵌结构时使用具有低介电常数的中间层和互连绝缘膜。第一绝缘膜，第二绝缘膜，第一掩模形成层，第二掩模形成层，第三掩模形成层和第四掩模形成层依次沉积在衬底上。图案化第四掩模形成层以形成具有互连沟槽图案的第四掩模。在第四掩模上形成抗蚀剂掩模之后，蚀刻到第二绝缘膜的层以打开通孔。通过第四掩模蚀刻第三掩模形成层，从而形成具有互连沟槽图案的第三掩模，并且在第一绝缘膜上向下延伸通孔。通过第四掩模蚀刻第二掩模形成层，从而形成具有互连沟槽图案的第二掩模，并且去除留在通孔底部的第一绝缘膜。随后，通过第二掩模蚀刻第二绝缘膜，从而形成互连沟槽，然后去除第二掩模。

5. 发明授权

US07063576B2 L-shaped bulb socket 失效
标题翻译： L形灯泡插座
公开(公告)号：US07063576B2
公开(公告)日：2006-06-20
申请号：US10991567
申请日：2004-11-18
申请人： Masashi Ooi , Masaki Okamoto
发明人： Masashi Ooi , Masaki Okamoto
IPC分类号： H01R24/00 , H01R13/53
CPC分类号： H01R33/09 , H01R11/05 , H01R13/04 , H01R13/11 , H01R13/743
摘要： Each terminal (3) of a bulb socket (1) has a power-supplying tab (31) and a bulb connecting portion (32) that are integral with one another. The bulb connecting portion (32) is on an extension of the power-supplying tab (31) extending along an inserting direction into a connector accommodating portion (25). Thus, the bulb socket (1) is reduced in height, the number of assembling steps is reduced, and the deformation of the terminals can be avoided. Further, a reduction in the number of parts leads to reduced production costs.
摘要翻译：灯泡插座（1）的每个端子（3）具有彼此成一体的供电突片（31）和灯泡连接部分（32）。灯泡连接部分（32）位于供电接头（31）的沿着插入方向延伸到连接器容纳部分（25）中的延伸部分上。因此，灯泡插座（1）的高度减小，组装步骤的数量减少，并且可以避免端子的变形。此外，部件数量的减少导致生产成本降低。

6. 发明授权

US06796852B2 Connector and method for producing the same 失效
标题翻译：连接器及其制造方法
公开(公告)号：US06796852B2
公开(公告)日：2004-09-28
申请号：US10202032
申请日：2002-07-23
申请人： Masaki Okamoto
发明人： Masaki Okamoto
IPC分类号： H01R13405
CPC分类号： H01R43/24 , H01R13/405 , H01R43/16
摘要： In a process of secondary insert molding, a molten resin is injected into a cavity (236) for secondary molding that is formed by bring a clipping portion (234) of a mold for secondary molding into contact with an outer surface of a primary molding article (216). Projecting areas of ends (214A) of terminals (214) on an outer surface of a resin molding portion (210) are formed of a primary molding resin portion (219). Thus, the cavity (236) for secondary molding and clipping portion (234) are in a position where the ends (214A) of the terminals (214) do not contact the cavity (236) and clipping portion (234).
摘要翻译：在二次嵌入成型的过程中，将熔融树脂注入到用于二次模塑的空腔（236）中，该空腔通过使用于二次模制的模具的夹持部分（234）与初级模制品的外表面接触而形成（216）。在树脂成型部（210）的外表面上的端子（214）的端部（214A）的突出区域由初级模制树脂部分（219）形成。因此，用于二次模制和夹紧部分（234）的腔（236）处于端子（214）的端部（214A）不接触空腔（236）和夹持部分（234）的位置。

7. 发明授权

US06343942B1 Connection configuration of a multiple-light lighting fixture 失效
标题翻译：多光照明灯具的连接配置
公开(公告)号：US06343942B1
公开(公告)日：2002-02-05
申请号：US09421318
申请日：1999-10-18
申请人： Masaki Okamoto
发明人： Masaki Okamoto
IPC分类号： H01R2500
CPC分类号： H01R33/09 , H01R25/142
摘要： Electric wires 41 are housed within a housing space 36 and make contact with bulb-inking contacting members 22, all of the bulbs 42 being connected via bulb terminal fittings 19 and bulb-linking contacting members 22. A multiple-light lighting fixture can be made suitable for a varying number of bulbs or for bulbs of varying pitch merely by altering the length of the electric wires 41. As a result costs can be reduced compared to the case in which a bus bar is formed in a unified manner with terminal areas which make contact with bulbs, and in which a plurality of types of bus bars are produced in order to correspond to the number of bulbs or the pitch thereof.
摘要翻译：电线41容纳在容纳空间36内并与灯泡接触构件22接触，所有灯泡42通过灯泡端子配件19和灯泡连接接触构件22连接。可以制造多灯照明器具适用于不同数量的灯泡或仅通过改变电线41的长度而变化的灯泡的灯泡。结果，与以与终端区域的终端区域形成总线的情况相比，可以降低成本与灯泡接触，并且其中生产多种类型的母线以便对应于灯泡数量或节距。

8. 发明授权

US09236412B2 Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus 有权
标题翻译：半导体器件及其制造方法，固态成像器件和电子设备
公开(公告)号：US09236412B2
公开(公告)日：2016-01-12
申请号：US13444050
申请日：2012-04-11
申请人： Masaki Okamoto
发明人： Masaki Okamoto
IPC分类号： H01L23/48 , H01L27/146 , H01L21/768
CPC分类号： H01L21/76804 , H01L21/76831 , H01L21/76877 , H01L21/76898 , H01L23/481 , H01L23/5226 , H01L24/27 , H01L27/14627 , H01L27/14632 , H01L27/14634 , H01L27/14636 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/1469 , H01L2224/24145 , H01L2224/2919 , H01L2224/32145 , H01L2224/9205 , H01L2224/92244 , H01L2224/94 , H01L2225/06544 , H01L2924/0715 , H01L2924/13091 , H01L2924/1431 , H04N5/378 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.
摘要翻译：一种制造半导体器件的方法包括将包括第一衬底和形成为接触第一衬底的一个表面的第一绝缘层的第一半导体晶片和包括第二衬底和第二绝缘层的第二半导体晶片接合，形成第三绝缘层绝缘层，进行蚀刻，使得第二绝缘层保留在第二布线层上，形成第一连接孔，在第一连接孔上形成绝缘膜，进行第二绝缘层和绝缘膜的蚀刻，形成第二连接并且形成在连接孔的内部部分中并连接到第二布线层的第一通孔，其中形成在第一基板的另一个表面上的第一连接孔的直径大于第一连接孔的直径形成在第三绝缘层上。

9. 发明授权

US08759222B2 Method for fabrication of semiconductor device 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08759222B2
公开(公告)日：2014-06-24
申请号：US11680709
申请日：2007-03-01
申请人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
发明人： Tsutomu Shimayama , Takatoshi Kameshima , Masaki Okamoto
IPC分类号： H01L21/311
CPC分类号： H01L21/7682 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/02216 , H01L21/02274 , H01L21/02351 , H01L21/31116 , H01L21/31633 , H01L21/31695 , H01L21/76808 , H01L21/76811 , H01L21/76825 , H01L21/76835 , H01L2221/1036 , H01L2221/1047
摘要： Disclosed herein is a method for fabrication of semiconductor device involving a first step of coating the substrate with a double-layered insulating film in laminate structure having the skeletal structure of inorganic material and a second step of etching the upper layer of the insulating film as far as the lower layer of the insulating film. In the method for fabrication of semiconductor device, the first step is carried out in such a way that the skeletal structure is incorporated with a pore-forming material of hydrocarbon compound so that one layer of the insulating film contains more carbon than the other layer of the insulating film.
摘要翻译：本发明公开了一种制造半导体器件的方法，该方法包括用具有无机材料的骨架结构的叠层结构中的双层绝缘膜涂覆基板的第一步骤，以及将绝缘膜的上层蚀刻到远处的第二步骤作为绝缘膜的下层。在半导体器件的制造方法中，第一步是以骨架结构与烃化合物的成孔材料结合的方式进行，使得一层绝缘膜含有比另一层更多的碳绝缘膜。

10. 发明授权

US08754221B2 Optically active cyclic alcohol compound and method for preparing the same 有权
标题翻译：光学活性环状醇化合物及其制备方法
公开(公告)号：US08754221B2
公开(公告)日：2014-06-17
申请号：US13747376
申请日：2013-01-22
申请人： Masaki Okamoto , Akira Sakuragi , Yoshikazu Mori , Muneki Kishida , Takanori Higashijima
发明人： Masaki Okamoto , Akira Sakuragi , Yoshikazu Mori , Muneki Kishida , Takanori Higashijima
IPC分类号： C07D215/233 , C07D401/04
CPC分类号： C07D215/233 , B01J31/0252 , B01J31/146 , B01J31/1805 , B01J31/2295 , B01J2231/64 , B01J2231/643 , B01J2531/821 , C07B53/00 , C07D215/22 , C07D401/04 , Y02P20/55
摘要： The present invention relates to a method for preparing an optically active cyclic alcohol compound represented by general formula [I]: [wherein R represents a hydrogen atom or a protecting group for amino group, and * represents an asymmetric carbon atom.] which comprises a step of subjecting a cyclic ketone compound represented by general formula [II]: [wherein R has the same meaning as defined above.] to asymmetric reduction (A) in the presence of an optically active oxazaborolidine compound and a boron hydride compound, or (B) in the presence of an asymmetric transition metal complex obtained from a transition metal compound and an asymmetric ligand and a hydrogen donor, and relates to said compound.
摘要翻译：本发明涉及一种由通式[I]表示的光学活性环状醇化合物的制备方法：[其中R表示氢原子或氨基保护基，*表示不对称碳原子]，其包含在光学活性的恶唑硼烷化合物和硼氢化合物的存在下，将不饱和还原（A）进行不饱和还原（A）的步骤：（其中R具有与上述定义相同的含义） B）在由过渡金属化合物和不对称配体和氢供体获得的不对称过渡金属络合物的存在下，涉及所述化合物。

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