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    • 4. 发明申请
    • Semiconductor laser device and manufacturing method therefor
    • 半导体激光器件及其制造方法
    • US20060039428A1
    • 2006-02-23
    • US11205022
    • 2005-08-17
    • Masaki Kondou
    • Masaki Kondou
    • H01S5/00
    • B82Y20/00H01S5/0421H01S5/0425H01S5/22H01S5/2205H01S5/34326H01S5/3436
    • In a semiconductor laser device, a first cladding layer (2), a quantum well active layer (3), a second cladding layer (4), and an etching stopper layer (5) are sequentially stacked in this order on a substrate (1). On the etching stopper layer (5) is disposed a striped ridge portion (11) that is composed of a third cladding layer (14) and a contact layer (6). A p-side electrode (31) is provided on the ridge portion (11). Side faces of the ridge portion (11) except the contact layer (6) are covered with a dielectric film (21). The contact layer (6) has a layer thickness larger than a film thickness of a portion of the dielectric film (21) that is roughly parallel to the substrate (1)
    • 在半导体激光装置中,依次将第一包层(2),量子阱活性层(3),第二包覆层(4)和蚀刻停止层(5)依次层叠在基板(1) )。 在蚀刻停止层(5)上设置有由第三包覆层(14)和接触层(6)构成的条纹状的隆起部(11)。 p侧电极(31)设置在脊部(11)上。 除了接触层(6)之外的脊部(11)的侧面被电介质膜(21)覆盖。 所述接触层(6)的厚度大于所述电介质膜(21)的与所述基板(1)大致平行的部分的膜厚,