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1. 发明授权

US07685877B2 Semiconductor mechanical sensor 失效
标题翻译：半导体机械传感器
公开(公告)号：US07685877B2
公开(公告)日：2010-03-30
申请号：US12215884
申请日：2008-06-30
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要翻译：具有S / N比提高的新结构的半导体机械传感器。在硅衬底1的中心部分，形成包括梁结构的凹部2。在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

2. 发明授权

US07040165B2 Semiconductor mechanical sensor 失效
标题翻译：半导体机械传感器
公开(公告)号：US07040165B2
公开(公告)日：2006-05-09
申请号：US11062935
申请日：2005-02-22
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要翻译：具有S / N比提高的新结构的半导体机械传感器。在硅衬底1的中心部分，形成包括梁结构的凹部2。在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

3. 发明授权

US06422078B1 Semiconductor mechanical sensor 有权
公开(公告)号：US06422078B1
公开(公告)日：2002-07-23
申请号：US09742448
申请日：2000-12-22
申请人： Masahito Imai
发明人： Masahito Imai
IPC分类号： G01P15125
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

4. 发明授权

US5900554A Pressure sensor 失效
标题翻译：压力传感器
公开(公告)号：US5900554A
公开(公告)日：1999-05-04
申请号：US3711
申请日：1998-01-07
申请人： Horonobu Baba , Tiaki Mizuno , Masahito Imai , Yuichi Yokoyama , Masaki Takakuwa , Yasuki Shimoyama
发明人： Horonobu Baba , Tiaki Mizuno , Masahito Imai , Yuichi Yokoyama , Masaki Takakuwa , Yasuki Shimoyama
IPC分类号： G01L9/00 , G01L9/04
CPC分类号： G01L19/147 , G01L19/0038 , G01L19/0084 , G01L19/0636 , G01L19/143
摘要： When a compressed air is led into a reference pressure chamber along with a boundary between a resin housing and a terminal, such compressed air may cause a wire breaking. A barrier wall for blocking the compressed air from penetrating toward the wire is disposed. The reference pressure chamber is divided into a main chamber and a subchamber by the barrier wall. Since the barrier wall blocks the compressed air, the compressed air can not reach a silicon gel in the main chamber. Therefore, the wire breaking caused by the compressed air when connecting a connector therewith can be precluded.
摘要翻译：当压缩空气与树脂壳体和端子之间的边界一起被引入参考压力室时，这种压缩空气可能导致断线。设置用于阻挡压缩空气渗透到线的阻挡壁。基准压力室由隔离壁分为主室和副室。由于阻隔壁阻挡压缩空气，所以压缩空气不能到达主室中的硅凝胶。因此，可以防止在连接连接器时由压缩空气引起的断线。

5. 发明授权

US5872024A Method for manufacturing a mechanical force sensing semiconductor device 失效
标题翻译：机械力感测半导体器件的制造方法
公开(公告)号：US5872024A
公开(公告)日：1999-02-16
申请号：US834129
申请日：1997-04-14
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： B81B7/00 , C07C303/32 , C07C303/44 , C07C309/17 , G01C19/56 , G01C19/5656 , G01C19/5719 , H01L21/00 , H01L21/30 , H01L21/46
CPC分类号： B81B7/0006 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , B81B2201/0235 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A charge in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要翻译：具有S / N比提高的新结构的半导体机械传感器。在硅衬底1的中心部分，形成包括梁结构的凹部2。在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。对面对电极之间电容的电荷被电检测，因此检测到以相同方向作用的物理力的变化。

6. 发明授权

US07866210B2 Semiconductor mechanical sensor 失效
标题翻译：半导体机械传感器
公开(公告)号：US07866210B2
公开(公告)日：2011-01-11
申请号：US12381356
申请日：2009-03-11
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.
摘要翻译：具有S / N比提高的新结构的半导体机械传感器。在硅衬底1的中心部分，形成包括梁结构的凹部2。在梁的尖端处形成重物，并且在凹部2的底面中的重物的底面中，重物形成为电极5。在重量部分4和电极5之间施加交流电力，从而产生静电，并且重量被静电激励。在与重量的激励方向垂直的轴向方向上，电极6设置为面对重物的一个表面和面向其的基板的壁表面。对面对电极之间的电容变化进行电检测，因此检测到以相同方向作用的物理力的变化。

7. 发明申请

US20090014820A1 Semiconductor mechanical sensor 失效
公开(公告)号：US20090014820A1
公开(公告)日：2009-01-15
申请号：US12215884
申请日：2008-06-30
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： H01L29/00
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

8. 发明申请

US20060019421A1 Semiconductor mechanical sensor 失效
公开(公告)号：US20060019421A1
公开(公告)日：2006-01-26
申请号：US11210006
申请日：2005-08-23
申请人： Tetsuo Jujii , Masahito Imai
发明人： Tetsuo Jujii , Masahito Imai
IPC分类号： G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

9. 发明授权

US06938486B2 Semiconductor mechanical sensor 失效
公开(公告)号：US06938486B2
公开(公告)日：2005-09-06
申请号：US10899729
申请日：2004-07-27
申请人： Tetsuo Fujii , Masahito Imai
发明人： Tetsuo Fujii , Masahito Imai
IPC分类号： B81B7/00 , C07C303/32 , C07C303/44 , C07C309/17 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/125
CPC分类号： B81B7/0006 , B81B2201/0235 , C07C303/32 , C07C303/44 , G01C19/56 , G01C19/5656 , G01C19/5719 , G01P15/0802 , G01P15/125 , G01P2015/0817 , G01P2015/0828 , Y10T29/49002 , Y10T29/49004 , C07C309/17
摘要： A semiconductor mechanical sensor having a new structure in which a S/N ratio is improved. In the central portion of a silicon substrate 1, a recess portion 2 is formed which includes a beam structure. A weight is formed at the tip of the beam, and in the bottom surface of the weight in the bottom surface of the recess portion 2 facing the same, an electrode 5 is formed. An alternating current electric power is applied between the weight portion 4 and the electrode 5 so that static electricity is created and the weight is excited by the static electricity. In an axial direction which is perpendicular to the direction of the excitation of the weight, an electrode 6 is disposed to face one surface of the weight and a wall surface of the substrate which faces the same. A change in a capacitance between the facing electrodes is electrically detected, and therefore, a change in a physical force acting in the same direction is detected.

10. 发明授权

US06935182B2 Pressure sensor apparatus including stems provided with strain measuring arrangement 有权
标题翻译：包括具有应变测量装置的杆的压力传感器装置
公开(公告)号：US06935182B2
公开(公告)日：2005-08-30
申请号：US10437072
申请日：2003-05-14
申请人： Masahito Imai , Makoto Hatanaka
发明人： Masahito Imai , Makoto Hatanaka
IPC分类号： G01L9/04 , B60T8/36 , B60T17/18 , G01L9/00 , G01L15/00
CPC分类号： B60T8/3675 , B60T17/18 , G01L9/0055 , G01L15/00 , G01L19/147
摘要： A first end of each hollow stem includes a diaphragm and a strain gauge, and a second end of each stem includes an opening. A housing includes a plurality of stem receiving through holes, each of which receives the corresponding stem. An O-ring is arranged in each through hole such that the O-ring is placed adjacent an end surface of the second end of the stem, which is axially inwardly spaced from a surface of the side of the housing. When the stems and the housing are integrally installed over the device under test, each O-ring seals between the end surface of the second end of the corresponding stem and the device under test.
摘要翻译：每个空心杆的第一端包括隔膜和应变计，并且每个杆的第二端包括开口。壳体包括容纳通孔的多个杆，每个杆容纳相应的杆。 O形圈布置在每个通孔中，使得O形环邻近杆的第二端的端表面放置，该端部与壳体的侧面的轴向向内间隔开。当杆和壳体一体地安装在被测设备上时，每个O形环在对应的杆的第二端的端面与被测设备之间密封。

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